{"title":"Efficiency versus linearity trade-off in an S-band class-AB power amplifier","authors":"Zhifan Zhang, A. Piacibello, V. Camarchia","doi":"10.1109/PAWR56957.2023.10046214","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046214","url":null,"abstract":"This paper presents a design strategy to simultaneously optimize the efficiency and linearity of a single-device class-AB power amplifier, given minimum output power and gain requirements. The adopted linearity metric is the highest inter-modulation distortion in a two-tone test with 20 MHz spacing. The simultaneous selection of optimum source and load terminations that provide the best trade-off among all of the requirements is described in detail, and the synthesis of the matching networks is then presented. A prototype is developed based on a 6 W packaged GaN device around 3.5 GHz, manufactured and measured. According to the measured results, the amplifier achieves output power higher than 38 dBm with associated gain higher than 12 dB and saturated power-added efficiency in excess of 73% in a single-tone test at 3.25 GHz, while providing a 33% power-added efficiency and -30 dBc inter-modulation distortion in the 20 MHz two-tone test.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129369207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Christophe Quindroit, Pablo Rochas, N. Monsauret, A. Courty
{"title":"Study of High Frequency Nonlinear Memory Effect on Doherty Power Amplifiers Linearization Performances for 5G Applications","authors":"Christophe Quindroit, Pablo Rochas, N. Monsauret, A. Courty","doi":"10.1109/PAWR56957.2023.10046283","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046283","url":null,"abstract":"This paper presents a method to evaluate the impact of RF dispersions of a Doherty power amplifier (PA) on its linearizability. From the PA behavioral model, considering exclusively the nonlinear high-frequency (HF) memory effects, the linearization performance is evaluated. The behavioral model is modified to artificially reduce and increase the band of the RF dispersions and evaluate the impact on the linearity. The purpose of these simulations is to advise the designer of the required RF bandwidth to achieve the mandatory linearity performance. The designer will then adjust its circuit accordingly to maximize the efficiency-linearity trade-off.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129132411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Consideration of Nonlinear Effects in Different Receiver Architectures for Use in Passive Radar Systems","authors":"Marie Horlbeck, B. Scheiner, R. Weigel, F. Lurz","doi":"10.1109/PAWR56957.2023.10046246","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046246","url":null,"abstract":"In passive radar systems the high dynamic range between the received reflected signal and the received signal of neighboring strong transmitters as well as the direct signal causes high demands on the receivers. Since a real receiver never shows a perfect linear characteristic, this always implies nonlinear effects. Consequently, the in the receiver generated interfering signals lead to a reduced total sensitivity. According to the intensity and spectral distribution of the input signals, intermodulation noise is produced. This paper shows a consideration and an estimation of nonlinear effects in different receiver architectures, depending on various measured input spectra for passive FM radar.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129731613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 160-GHz, 10-dBm power amplifier for D-band communication in 0.1-μm GaAs pHEMT","authors":"T. Soma, M. Ito, Yasushi Wada","doi":"10.1109/PAWR56957.2023.10046251","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046251","url":null,"abstract":"This paper presents a D-band monolithic microwave integrated circuit (MMIC) power amplifier fabricated in 0.1-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. It uses a common-source topology and consists of 4 transistor stages with a gate width of 2×25 μm. To reduce loss in the inter-stage matching circuits, a compact capacitor cell integrated with bias-line branches is designed. The amplifier shows a 3-dB gain bandwidth of 55 GHz from 105 GHz to 160 GHz and a saturated output power of 10 dBm at 160 GHz. It shows the highest operation frequency for the GaAs pHEMT process to our knowledge.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127374723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Cimbili, C. Friesicke, F. van Raay, S. Wagner, M. Bao, R. Quay
{"title":"High-Efficiency Watt-Level E-band GaN Power Amplifier with a Compact Low-loss Combiner","authors":"B. Cimbili, C. Friesicke, F. van Raay, S. Wagner, M. Bao, R. Quay","doi":"10.1109/PAWR56957.2023.10046243","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046243","url":null,"abstract":"This paper presents a 3-stage E-band (71–83 GHz) power amplifier (PA) that employs a compact low-loss distributed matching network (DMN), which performs both the output matching and power combining. As a result of this, the measured PA achieves an output power of 30.4 dBm ± 0.9 dB (1.12 W ± 0.23 W) across the band. The PA achieves a peak output power of 1.35 W with a power-added efficiency (PAE) of 20.8% and a power gain of 16.3 dB at 78 GHz. The associated power density is 1.87 W/mm. When biased with 10V supply voltage, a peak PAE of 25% is reached. To the best of the authors’ knowledge, the peak PAE with the power gain and associated power density are the highest values reported in GaN technologies at E-band.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114171129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dominic Mikrut, P. Roblin, Chenyu Liang, Shane Smith, R. Tantawy
{"title":"Broadband Outphasing Power Amplifier Using Doherty-Chireix Continuum in a GaN MMIC Process","authors":"Dominic Mikrut, P. Roblin, Chenyu Liang, Shane Smith, R. Tantawy","doi":"10.1109/PAWR56957.2023.10046288","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046288","url":null,"abstract":"This paper presents the first experimental investigation of a broadband outphasing power amplifier designed in a 150nm GaN process utilizing the Doherty-Chireix Continuum. Simulations show a peak drain efficiency above 35% from 3.5-7 GHz. Peak drain efficiency was measured to be 53% when using a pulsed-RF signal at 3.5 GHz with a pulse width of 1μs and duty rate of 0.1%. Series inductors and shunt capacitors were used to minimize the total die area. The broadband outphasing power amplifier has a total die area of 3mm x 4mm.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132209773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"PAWR 2023 Cover Page","authors":"","doi":"10.1109/pawr56957.2023.10046281","DOIUrl":"https://doi.org/10.1109/pawr56957.2023.10046281","url":null,"abstract":"","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128077614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Reliable 5G Stacked Power Amplifier in 45nm CMOS Technology","authors":"Zhize Ma, Saleh Mohammadi","doi":"10.1109/PAWR56957.2023.10046289","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046289","url":null,"abstract":"A stacked transistor microwave power amplifier (PA) operating in fifth generation (5G) broadband cellular standard is presented. The PA is implemented using stack of six advanced NMOS transistors (ADNFETs with 32 nm length in a 45nm CMOS SOI technology) and using a dynamic biasing scheme from a single power supply VDD. The operation mode can be tuned from Class-AB to Class-A by simply adjusting the VDD. Under an applied VDD of 9V (1.5V per transistor) and operating frequency of 23 GHz, the maximum measured output power reaches 21.5 dBm. At a smaller power supply of 7V, the PAE peaks at 38.4%. The PA outputs more than 20 dBm of power from 22GHz to 27 GHz. The overall performance including estimated reliability characteristics is improved compared to a similar design in the same technology but with regular NFET transistors.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130448402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mengyue Tian, J. Bell, Ehsan M Azad, R. Quaglia, P. Tasker
{"title":"A Novel Cardiff Model Coefficients Extraction Process Based on Artificial Neural Network","authors":"Mengyue Tian, J. Bell, Ehsan M Azad, R. Quaglia, P. Tasker","doi":"10.1109/PAWR56957.2023.10046221","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046221","url":null,"abstract":"This paper presents a novel way to extract the Cardiff model coefficients. Analysis shows that the Cardiff model is easier for implementation in commercial RF design related software, while the Artificial Neural Network (ANN) based behavioral model provides more flexibility for extracting the coefficients of a model, the two methods have been combined. The load-pull setup, implemented in Keysight Advanced Design System (ADS), is used to acquire the pseudo-wave data of the Cree 10W transistor. By using the feedforward ANN structure together with a novel Cardiff model related backpropagation algorithm, a set of accurate coefficients can be extracted, whose Normalized Mean Squared Error (NMSE) is -54.73 dB as shown in this paper.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115961654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dominic Mikrut, P. Roblin, M. Lindquist, Nicholas Miller, Dave Frey
{"title":"A Comparison Study on the Broadband Performance of Load-Modulated Architectures using Nonlinear Embedding at 20 GHz","authors":"Dominic Mikrut, P. Roblin, M. Lindquist, Nicholas Miller, Dave Frey","doi":"10.1109/PAWR56957.2023.10046277","DOIUrl":"https://doi.org/10.1109/PAWR56957.2023.10046277","url":null,"abstract":"This paper presents a comparison study of Doherty, LMBA, and Hybrid Chireix-Doherty Outphasing PAs using a nonlinear embedding model at 20 GHz.","PeriodicalId":207437,"journal":{"name":"2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123482469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}