基于Doherty-Chireix连续体的GaN MMIC宽带失相功率放大器

2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications Pub Date : 2023-01-22 DOI:10.1109/PAWR56957.2023.10046288

Dominic Mikrut, P. Roblin, Chenyu Liang, Shane Smith, R. Tantawy

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引用次数: 0

摘要

本文介绍了利用Doherty-Chireix连续体在150nm GaN工艺中设计的宽带共相功率放大器的首次实验研究。仿真结果表明，在3.5-7 GHz频段，峰值漏极效率在35%以上。当脉冲射频信号频率为3.5 GHz，脉宽为1μs，占空率为0.1%时，峰值漏极效率为53%。串联电感和并联电容器被用来最小化总模具面积。宽带同相功率放大器的总模面积为3mm × 4mm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Broadband Outphasing Power Amplifier Using Doherty-Chireix Continuum in a GaN MMIC Process

This paper presents the first experimental investigation of a broadband outphasing power amplifier designed in a 150nm GaN process utilizing the Doherty-Chireix Continuum. Simulations show a peak drain efficiency above 35% from 3.5-7 GHz. Peak drain efficiency was measured to be 53% when using a pulsed-RF signal at 3.5 GHz with a pulse width of 1μs and duty rate of 0.1%. Series inductors and shunt capacitors were used to minimize the total die area. The broadband outphasing power amplifier has a total die area of 3mm x 4mm.

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2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications

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