用于0.1 μm GaAs pHEMT中d波段通信的160ghz, 10dbm功率放大器

2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications Pub Date : 2023-01-22 DOI:10.1109/PAWR56957.2023.10046251

T. Soma, M. Ito, Yasushi Wada

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引用次数: 0

摘要

提出了一种采用0.1 μm GaAs伪晶高电子迁移率晶体管(pHEMT)技术制作的d波段单片微波集成电路(MMIC)功率放大器。它采用共源拓扑结构，由4级晶体管组成，栅极宽度为2×25 μm。为了降低级间匹配电路的损耗，设计了一种带有偏置支路的小型电容单元。该放大器在105 GHz至160 GHz范围内具有55 GHz的3db增益带宽，在160 GHz范围内具有10 dBm的饱和输出功率。据我们所知，它显示了GaAs pHEMT工艺的最高工作频率。

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A 160-GHz, 10-dBm power amplifier for D-band communication in 0.1-μm GaAs pHEMT

This paper presents a D-band monolithic microwave integrated circuit (MMIC) power amplifier fabricated in 0.1-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. It uses a common-source topology and consists of 4 transistor stages with a gate width of 2×25 μm. To reduce loss in the inter-stage matching circuits, a compact capacitor cell integrated with bias-line branches is designed. The amplifier shows a 3-dB gain bandwidth of 55 GHz from 105 GHz to 160 GHz and a saturated output power of 10 dBm at 160 GHz. It shows the highest operation frequency for the GaAs pHEMT process to our knowledge.

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2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications

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