Proceedings of the IRE最新文献

Long-Range Propagation of Low-Frequency Radio Waves between the Earth and the Ionosphere 低频无线电波在地球和电离层之间的远距离传播

Proceedings of the IRE Pub Date : 2015-08-08 DOI: 10.1109/jrproc.1956.274900

J. Shmoys

引用次数: 4

A Theoretical and Experimental Investigation of Tuned-Circuit Distortion in Frequency-Modulation Systems 调频系统中调谐电路畸变的理论与实验研究

Proceedings of the IRE Pub Date : 2013-02-16 DOI: 10.1109/jrproc.1945.234544

D. L. Jaffe

{"title":"A Theoretical and Experimental Investigation of Tuned-Circuit Distortion in Frequency-Modulation Systems","authors":"D. L. Jaffe","doi":"10.1109/jrproc.1945.234544","DOIUrl":"https://doi.org/10.1109/jrproc.1945.234544","url":null,"abstract":"The problem of distortion introduced into the modulation intelligence by tuned circuits is considered both theoretically and experimentally. Complex equations result when the effect of the intelligence modulation is considered. These equations, while not readily amenable to Fourier analysis, disclose that the distortion parameters are ΔW/BW and λ/BW where, ΔW/2π = peak-frequency swing λ/2π = modulation frequency BW = bandwidth in kilocycles measured at 3 decibels down. Double-tuned circuits critically coupled. If the effect of the modulation frequency is neglected, the equations resulting from a theoretical analysis are somewhat simplified and the distortion due to single- and double-tuned circuits can be formulated. Close agreement between calculated and measured distortion was obtained up to approximately a 5000-cycle-per-second modulation frequency. At this frequency the departure of the observed from calculated values was quite noticeable. Theoretical maximum-distortion limits for the single- and double-tuned circuits are derived. For the single-tuned circuit the theoretical maximum distortion is Dnmax (single-tuned circuit) = 2λ/ΔW·100. For the double-tuned circuit it is Dnmax (double-tuned circuit) = 4λ/ΔW·100 A conservative design figure relating bandwidth to frequency swing in order to insure distortion-free transmission to 15,000 cycles per second was experimentally found to be, ΔW/BW = 1/4.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82891784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Steps toward Artificial Intelligence 迈向人工智能的步骤

Proceedings of the IRE Pub Date : 1995-10-26 DOI: 10.1109/JRPROC.1961.287775

M. Minsky

{"title":"Steps toward Artificial Intelligence","authors":"M. Minsky","doi":"10.1109/JRPROC.1961.287775","DOIUrl":"https://doi.org/10.1109/JRPROC.1961.287775","url":null,"abstract":"The problems of heuristic programming-of making computers solve really difficult problems-are divided into five main areas: Search, Pattern-Recognition, Learning, Planning, and Induction. A computer can do, in a sense, only what it is told to do. But even when we do not know how to solve a certain problem, we may program a machine (computer) to Search through some large space of solution attempts. Unfortunately, this usually leads to an enormously inefficient process. With Pattern-Recognition techniques, efficiency can often be improved, by restricting the application of the machine's methods to appropriate problems. Pattern-Recognition, together with Learning, can be used to exploit generalizations based on accumulated experience, further reducing search. By analyzing the situation, using Planning methods, we may obtain a fundamental improvement by replacing the given search with a much smaller, more appropriate exploration. To manage broad classes of problems, machines will need to construct models of their environments, using some scheme for Induction. Wherever appropriate, the discussion is supported by extensive citation of the literature and by descriptions of a few of the most successful heuristic (problem-solving) programs constructed to date.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88041083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1408

An Introduction to Loran 罗兰简介

Proceedings of the IRE Pub Date : 1990-10-01 DOI: 10.1109/62.60674

J. Pierce

引用次数: 11

The Madistor-A Magnetically Controlled Semiconductor Plasma Device madistortion—磁控半导体等离子体装置

Proceedings of the IRE Pub Date : 1962-12-01 DOI: 10.1109/JRPROC.1962.288259

I. Melngailis, R. Rediker

{"title":"The Madistor-A Magnetically Controlled Semiconductor Plasma Device","authors":"I. Melngailis, R. Rediker","doi":"10.1109/JRPROC.1962.288259","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288259","url":null,"abstract":"The madistor is a new active device which makes use of the effects of a magnetic field on an injection plasma in a semiconductor. The formation of an injection plasma has been observed in p-type InSb at temperatures below 100°K as donor traps become saturated by electrons injected through a forward biased n+p junction. In an appropriately designed n+pp+ diode, the saturation of traps and the subsequent increase in electron lifetime bring about an abrupt decrease of base resistance, and a negative resistance region is observed in the current-voltage characteristic. Because of the high mobility of electrons in InSb (5×105 cm2/vsec) the plasma can be appreciably deflected and deformed by transverse magnetic fields of the order of 10 gauss. The possibility of controlling the position of a plasma inside a solid by means of a magnetic field can be utilized in a number of different types of madistors in which the input circuit is isolated from the output. The operation at 77°K of four types of InSb madistors has been studied. The first makes use of a specially designed n+ pp+ diode mounted in the air gap of a small ferromagnetic-core electromagnet. A small change in the electromagnet winding current produces a magnetic field at the diode and causes a larger change in diode current. Typically an increase in mmf of 200-ma turns produces an additional magnetic field intensity of 5 gauss which decreases the diode current by 10 ma.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78416691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 27

Design and Performance of a Broad-Band FM Demodulator with Frequency Compression 一种带频率压缩的宽带调频解调器的设计与性能

Proceedings of the IRE Pub Date : 1962-12-01 DOI: 10.1109/JRPROC.1962.288260

C. L. Ruthroff, W. Bodtmann

引用次数: 8

Properties of 400 Mcps Long-Distance Tropospheric Circuits 400 Mcps长距离对流层电路的特性

Proceedings of the IRE Pub Date : 1962-12-01 DOI: 10.1109/JRPROC.1962.288264

J. Chisholm, W. Morrow, B. Nichols, J. Roche, A. E. Teachman

引用次数: 26

Double Injection Diodes and Related DI Phenomena in Semiconductors 半导体中的双注入二极管及相关DI现象

Proceedings of the IRE Pub Date : 1962-12-01 DOI: 10.1109/JRPROC.1962.288258

N. Holonyak

{"title":"Double Injection Diodes and Related DI Phenomena in Semiconductors","authors":"N. Holonyak","doi":"10.1109/JRPROC.1962.288258","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288258","url":null,"abstract":"Experimental studies of double injection (DI) negative resistance phenomena in GaAs, Si, and Ge are presented. V-I characteristics, switching, trapping, and photosensitivity properties of GaAs DI p-i-n diodes, fabricated by diffusion and alloying processes on semi-insulating crystals and in other cases fabricated via epitaxial processes with Cu-doped i regions, are described. Similar studies and data are presented on Si DI p-i-n diodes prepared via diffusion and/or alloying processes. Silicon DI p-i-n diodes are described which have been doped with various deep level impurities such as Au, Zn, Cd, or Co and which, depending upon the kind and concentration of deep level impurities, display a wide range of behavior including useful photosensitivity, switching, and voltage regulation properties. Brief mention is made of Ge DI p-i-n diodes fabricated on n-type crystals counter-doped with Cu, Fe, Ni, Co, or Mn. A comparison is made between experimental results and current theories of double injection effects. As might be expected, existing theories do not completely account for the experimental situation, e.g., breakdown to constant voltage in certain units and phenomena which seem closely related to plasma effects. In addition to various practical implications, including possibilities for a noninteracting diode negative resistance matrix, low voltage regulator diodes, photosensitive charge-storage diodes, and higher power microwave switching p-i-n diodes, the significance of deep level doping and possible and actual effects (e.g., secondary switching effects) on epitaxial Si devices are described.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83586689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 65

A Solid-State Display Device 固态显示器件

Proceedings of the IRE Pub Date : 1962-12-01 DOI: 10.1109/JRPROC.1962.288261

S. Yando

引用次数: 4

Switching Speed and Dissipation in Fast, Thin-Film Cryotron Circuits 快速薄膜低温加速器电路的开关速度和耗散

Proceedings of the IRE Pub Date : 1962-12-01 DOI: 10.1109/JRPROC.1962.288263

Norman H. Meyers

引用次数: 9