The Madistor-A Magnetically Controlled Semiconductor Plasma Device

I. Melngailis, R. Rediker
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引用次数: 27

Abstract

The madistor is a new active device which makes use of the effects of a magnetic field on an injection plasma in a semiconductor. The formation of an injection plasma has been observed in p-type InSb at temperatures below 100°K as donor traps become saturated by electrons injected through a forward biased n+p junction. In an appropriately designed n+pp+ diode, the saturation of traps and the subsequent increase in electron lifetime bring about an abrupt decrease of base resistance, and a negative resistance region is observed in the current-voltage characteristic. Because of the high mobility of electrons in InSb (5×105 cm2/vsec) the plasma can be appreciably deflected and deformed by transverse magnetic fields of the order of 10 gauss. The possibility of controlling the position of a plasma inside a solid by means of a magnetic field can be utilized in a number of different types of madistors in which the input circuit is isolated from the output. The operation at 77°K of four types of InSb madistors has been studied. The first makes use of a specially designed n+ pp+ diode mounted in the air gap of a small ferromagnetic-core electromagnet. A small change in the electromagnet winding current produces a magnetic field at the diode and causes a larger change in diode current. Typically an increase in mmf of 200-ma turns produces an additional magnetic field intensity of 5 gauss which decreases the diode current by 10 ma.
madistortion—磁控半导体等离子体装置
磁控器是一种利用磁场作用于半导体中注入等离子体的新型有源器件。在温度低于100°K的p型InSb中,由于通过正向偏置n+p结注入的电子使施主阱饱和,已经观察到注入等离子体的形成。在适当设计的n+pp+二极管中,陷阱的饱和和随后的电子寿命的增加导致基极电阻突然降低,并且在电流-电压特性中观察到负电阻区。由于InSb中电子的高迁移率(5×105 cm2/vsec),等离子体在10高斯量级的横向磁场作用下会发生明显的偏转和变形。通过磁场控制等离子体在固体内部位置的可能性可用于许多不同类型的变频器,其中输入电路与输出电路隔离。研究了四种InSb介质在77°K下的操作。第一种是利用一个特殊设计的n+ pp+二极管,安装在一个小铁磁核电磁铁的气隙中。电磁铁绕组电流的微小变化在二极管处产生磁场,并引起二极管电流的较大变化。通常,200毫安匝数增加mmf会产生5高斯的额外磁场强度,从而使二极管电流减少10毫安。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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