{"title":"madistortion—磁控半导体等离子体装置","authors":"I. Melngailis, R. Rediker","doi":"10.1109/JRPROC.1962.288259","DOIUrl":null,"url":null,"abstract":"The madistor is a new active device which makes use of the effects of a magnetic field on an injection plasma in a semiconductor. The formation of an injection plasma has been observed in p-type InSb at temperatures below 100°K as donor traps become saturated by electrons injected through a forward biased n+p junction. In an appropriately designed n+pp+ diode, the saturation of traps and the subsequent increase in electron lifetime bring about an abrupt decrease of base resistance, and a negative resistance region is observed in the current-voltage characteristic. Because of the high mobility of electrons in InSb (5×105 cm2/vsec) the plasma can be appreciably deflected and deformed by transverse magnetic fields of the order of 10 gauss. The possibility of controlling the position of a plasma inside a solid by means of a magnetic field can be utilized in a number of different types of madistors in which the input circuit is isolated from the output. The operation at 77°K of four types of InSb madistors has been studied. The first makes use of a specially designed n+ pp+ diode mounted in the air gap of a small ferromagnetic-core electromagnet. A small change in the electromagnet winding current produces a magnetic field at the diode and causes a larger change in diode current. Typically an increase in mmf of 200-ma turns produces an additional magnetic field intensity of 5 gauss which decreases the diode current by 10 ma.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"10 1","pages":"2428-2435"},"PeriodicalIF":0.0000,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"The Madistor-A Magnetically Controlled Semiconductor Plasma Device\",\"authors\":\"I. Melngailis, R. Rediker\",\"doi\":\"10.1109/JRPROC.1962.288259\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The madistor is a new active device which makes use of the effects of a magnetic field on an injection plasma in a semiconductor. The formation of an injection plasma has been observed in p-type InSb at temperatures below 100°K as donor traps become saturated by electrons injected through a forward biased n+p junction. In an appropriately designed n+pp+ diode, the saturation of traps and the subsequent increase in electron lifetime bring about an abrupt decrease of base resistance, and a negative resistance region is observed in the current-voltage characteristic. Because of the high mobility of electrons in InSb (5×105 cm2/vsec) the plasma can be appreciably deflected and deformed by transverse magnetic fields of the order of 10 gauss. The possibility of controlling the position of a plasma inside a solid by means of a magnetic field can be utilized in a number of different types of madistors in which the input circuit is isolated from the output. The operation at 77°K of four types of InSb madistors has been studied. The first makes use of a specially designed n+ pp+ diode mounted in the air gap of a small ferromagnetic-core electromagnet. A small change in the electromagnet winding current produces a magnetic field at the diode and causes a larger change in diode current. Typically an increase in mmf of 200-ma turns produces an additional magnetic field intensity of 5 gauss which decreases the diode current by 10 ma.\",\"PeriodicalId\":20574,\"journal\":{\"name\":\"Proceedings of the IRE\",\"volume\":\"10 1\",\"pages\":\"2428-2435\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1962-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IRE\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/JRPROC.1962.288259\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IRE","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/JRPROC.1962.288259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Madistor-A Magnetically Controlled Semiconductor Plasma Device
The madistor is a new active device which makes use of the effects of a magnetic field on an injection plasma in a semiconductor. The formation of an injection plasma has been observed in p-type InSb at temperatures below 100°K as donor traps become saturated by electrons injected through a forward biased n+p junction. In an appropriately designed n+pp+ diode, the saturation of traps and the subsequent increase in electron lifetime bring about an abrupt decrease of base resistance, and a negative resistance region is observed in the current-voltage characteristic. Because of the high mobility of electrons in InSb (5×105 cm2/vsec) the plasma can be appreciably deflected and deformed by transverse magnetic fields of the order of 10 gauss. The possibility of controlling the position of a plasma inside a solid by means of a magnetic field can be utilized in a number of different types of madistors in which the input circuit is isolated from the output. The operation at 77°K of four types of InSb madistors has been studied. The first makes use of a specially designed n+ pp+ diode mounted in the air gap of a small ferromagnetic-core electromagnet. A small change in the electromagnet winding current produces a magnetic field at the diode and causes a larger change in diode current. Typically an increase in mmf of 200-ma turns produces an additional magnetic field intensity of 5 gauss which decreases the diode current by 10 ma.