Physica Status Solidi B-basic Solid State Physics最新文献

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Progress in Non‐equilibrium Green's Functions VIII (PNGF VIII) 非平衡格林函数进展第八次会议(PNGF VIII)
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-15 DOI: 10.1002/pssb.202400341
Hugo U. R. Strand, Claudio Verdozzi, Michael Bonitz
{"title":"Progress in Non‐equilibrium Green's Functions VIII (PNGF VIII)","authors":"Hugo U. R. Strand, Claudio Verdozzi, Michael Bonitz","doi":"10.1002/pssb.202400341","DOIUrl":"https://doi.org/10.1002/pssb.202400341","url":null,"abstract":"","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accelerating Nonequilibrium Green Functions Simulations: The G1–G2 Scheme and Beyond 加速非平衡格林函数模拟:G1-G2 方案及其他
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-15 DOI: 10.1002/pssb.202470018
Michael Bonitz, Jan‐Philip Joost, Christopher Makait, Erik Schroedter, Tim Kalsberger, Karsten Balzer
{"title":"Accelerating Nonequilibrium Green Functions Simulations: The G1–G2 Scheme and Beyond","authors":"Michael Bonitz, Jan‐Philip Joost, Christopher Makait, Erik Schroedter, Tim Kalsberger, Karsten Balzer","doi":"10.1002/pssb.202470018","DOIUrl":"https://doi.org/10.1002/pssb.202470018","url":null,"abstract":"","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tip‐Enhanced Raman Spectroscopy Coherence Length of 2D Materials: An Application to Graphene 二维材料的尖端增强拉曼光谱相干长度:石墨烯的应用
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-15 DOI: 10.1002/pssb.202400287
Rafael Nadas, Raul Correa, Luiz Gustavo Cançado, Ado Jorio
{"title":"Tip‐Enhanced Raman Spectroscopy Coherence Length of 2D Materials: An Application to Graphene","authors":"Rafael Nadas, Raul Correa, Luiz Gustavo Cançado, Ado Jorio","doi":"10.1002/pssb.202400287","DOIUrl":"https://doi.org/10.1002/pssb.202400287","url":null,"abstract":"Herein, a protocol is presented for determining the tip‐enhanced Raman spectroscopy (TERS) coherence length (<jats:italic>L</jats:italic><jats:sub>c</jats:sub>) of the two main Raman bands of graphene. This method involves performing approach curve experiments and plotting the normalized areas of the G and 2D bands as a function of tip–sample distance. The resultant data are fitted using a specific TERS formula to extract <jats:italic>L</jats:italic><jats:sub>c</jats:sub>. The results indicate different coherence lengths for the G and 2D bands in graphene as and nm. While this protocol is specifically done for graphene, the underlying theoretical framework, based on mode symmetry, can be extended to other 2D materials, such as transition metal dichalcogenides. This demonstrates the versatility and potential of TERS in exploring the coherence properties of various 2D materials.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic Anisotropy of Cr2Te3: Competition between Surface and Middle Layers Cr2Te3 的磁各向异性:表层和中层之间的竞争
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-15 DOI: 10.1002/pssb.202400308
Yile Wang, Shilei Ji, Jianping Yang, Xing'ao Li
{"title":"Magnetic Anisotropy of Cr2Te3: Competition between Surface and Middle Layers","authors":"Yile Wang, Shilei Ji, Jianping Yang, Xing'ao Li","doi":"10.1002/pssb.202400308","DOIUrl":"https://doi.org/10.1002/pssb.202400308","url":null,"abstract":"Recently, the orbital coupling in 2D materials has been demonstrated to have a significant impact on the magnetic anisotropy (MA) of CrTe<jats:sub>2</jats:sub>. The Te atomic layers on the surface layers determine the magnetocrystalline anisotropy (MCA) of the system due to orbital coupling. Herein, is proposed to investigate the surface and middle layers of Te atoms on MA. The MCA of consists of in‐plane and out‐of‐plane components, which are contributed by the surface layer and middle layer, respectively. Due to the lack of Cr–Te–Cr chemical bonds in the <jats:italic>z</jats:italic>‐axis, the surface layer produces coupling and results in the in‐plane MA. In addition, a tensile strain can enhance the coupling on the middle layer and lead to the out‐of‐plane MCA. At the same time, the out‐of‐plane MCA breaks the vertical mirror symmetry and an anomalous Hall effect has been detected on monolayer (1L) . Based on this result, an anomalous Hall device is designed to record and read information. The opposing contribution of the surface and middle layers provides a completely new way to understand 2D materials.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb) 二维杰纳斯单层中的半金属铁磁性:Mn2GeX(X = As,Sb)
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-09 DOI: 10.1002/pssb.202400340
Qiuyue Ma, Yanfeng Ge, Wenhui Wan, Guochun Yang, Yong Liu
{"title":"Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)","authors":"Qiuyue Ma, Yanfeng Ge, Wenhui Wan, Guochun Yang, Yong Liu","doi":"10.1002/pssb.202400340","DOIUrl":"https://doi.org/10.1002/pssb.202400340","url":null,"abstract":"Two‐dimensional (2D) Janus materials are a fascinating class of materials resulting from their unique electronic and magnetic properties induced by mirror symmetry breaking. However, 2D Janus materials with intrinsic magnetism remain rather rare, casting a mysterious veil over magnetism. In this work, the electronic and magnetic properties of Janus Mn<jats:sub>2</jats:sub>GeX (X = As, Sb) monolayers using the first‐principles calculations are investigated. The results demonstrate that these Janus materials exhibit excellent mechanical and dynamic stability, indicating their potential for future applications in nanoscale spintronic devices. Interestingly, the Janus and monolayers possess exciting half‐metallic character with wide half‐metallic gaps of 0.29 and 0.18 eV, and spin gaps of 1.68 and 1.62 eV, respectively. Their calculated ground state exhibits a strong preference for ferromagnetic ordering, with a Curie temperature () of 630 and 590 K, respectively. Additionally, the ferromagnetism of Janus Mn<jats:sub>2</jats:sub>GeX (X = As, Sb) monolayers is robust against biaxial strain ranging from −6% to 6%. Under 6% tensile strain, the calculated of the monolayer is 639 K, which represents a 9% increase compared to the observed in the unstrained condition. All these intriguing electronic and magnetic properties make the Janus Mn<jats:sub>2</jats:sub>GeX (X = As, Sb) monolayers an appealing candidate for applications in nanoscale spintronic devices.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of Mechanical Properties of NiCo Alloy Induced by Inhomogeneous Gradient of Solute Element Segregation 非均质梯度溶质元素偏析对镍钴合金机械性能的影响
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-09 DOI: 10.1002/pssb.202400350
Di Liu, Wei Zhang, Xin Guo, Junqiang Ren, Hongtao Xue, Xuefeng Lu
{"title":"Enhancement of Mechanical Properties of NiCo Alloy Induced by Inhomogeneous Gradient of Solute Element Segregation","authors":"Di Liu, Wei Zhang, Xin Guo, Junqiang Ren, Hongtao Xue, Xuefeng Lu","doi":"10.1002/pssb.202400350","DOIUrl":"https://doi.org/10.1002/pssb.202400350","url":null,"abstract":"Inhomogeneous gradient nanocrystals have better mechanical properties than uniform gradient nanocrystals. The segregation of solute elements in inhomogeneous gradient nanocrystals is expected to induce the re‐enhancement of mechanical properties of alloys. Herein, solute element segregation structures of inhomogeneous gradient structure nanocrystalline NiCo alloy are established, simulating tensile deformation via molecular dynamics. The results show that the segregation of solute elements in the inhomogeneous gradient structure of nanocrystals can improve the mechanical properties of the alloy, especially the structure of the intragranular segregation. The intragranular segregation of solute elements induces the decrease of grain boundary energy and greatly enhances the stability of grain boundaries. In addition, the segregation of solute elements within grains can hinder the dislocation movement to a certain extent, and the hindering effect on dislocation movement of stable grain boundaries induced by intragranular segregation of solute elements further enhances the mechanical properties of nanocrystalline alloys. This strategy of combining heterogeneous gradient structure and solute element segregation structure provides a positive and interesting perspective for the design of advanced alloys with excellent properties.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device 用于横向准相位匹配波长转换器件的 +c/-c GaN 极性反转双层层的金属有机气相外延
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-09 DOI: 10.1002/pssb.202400161
Kazuhisa Ikeda, Shahzeb Malik, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama
{"title":"Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device","authors":"Kazuhisa Ikeda, Shahzeb Malik, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama","doi":"10.1002/pssb.202400161","DOIUrl":"https://doi.org/10.1002/pssb.202400161","url":null,"abstract":"Photon‐pair generation based on optical parametric down‐conversion has attracted for the application as a light source for quantum information. Highly efficient wavelength‐conversion devices require a polarity‐inversion structure when using nitride semiconductors. A transverse quasi‐phase‐matching (QPM) polarity‐inverted GaN bilayer channel waveguide device is suitable for efficient wavelength conversion. This study designed a cross‐section device to satisfy the modal dispersion phase‐matching condition between the TM<jats:sub>02</jats:sub> mode pump light and the TM<jats:sub>00</jats:sub> mode signal/idler light. Moreover, an AlN oxidation interlayer fabricates the Ga‐polar/N‐polar (+<jats:italic>c</jats:italic>/−<jats:italic>c</jats:italic>) GaN layers via metalorganic vapor‐phase epitaxy (MOVPE). A 145 nm thick film layer with a macro‐step‐free surface is grown by optimizing the −<jats:italic>c</jats:italic>‐GaN growth conditions and reducing the substrate off‐angle to 0.2°. Next, the AlN layer is oxidized in an electric furnace and MOVPE is used to regrow a 1500 nm thick +<jats:italic>c</jats:italic>‐GaN layer. A macrosteps‐free surface can be achieved by reducing the off‐angle to 0.2° and optimizing the −<jats:italic>c</jats:italic>‐GaN growth conditions to avoid hillock formation. These results pave the way for improving the efficiency of GaN transverse QPM wavelength‐conversion devices.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tolerance of Corundum‐Structured Tin‐Doped Indium Oxide Thin Films to Gamma‐ray Irradiation 刚玉结构掺锡氧化铟薄膜对伽马射线辐照的耐受性
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-09 DOI: 10.1002/pssb.202400368
Kazuki Shimazoe, Shunsuke Kurosawa, Hiroki Tanaka, Takushi Takata, Hiroyuki Nishinaka
{"title":"Tolerance of Corundum‐Structured Tin‐Doped Indium Oxide Thin Films to Gamma‐ray Irradiation","authors":"Kazuki Shimazoe, Shunsuke Kurosawa, Hiroki Tanaka, Takushi Takata, Hiroyuki Nishinaka","doi":"10.1002/pssb.202400368","DOIUrl":"https://doi.org/10.1002/pssb.202400368","url":null,"abstract":"Corundum‐structured Sn‐doped indium oxide (rh‐ITO) is investigated as a novel transparent conductive oxide. Herein, its gamma‐ray tolerance up to a total dose of 77 kGy is examined for potential applications in harsh environments, such as space. The investigations are conducted on rh‐ITO with Sn concentrations of 0 and 5 at%. X‐ray diffraction 2θ‐ω scan analysis reveals that no phase separation occurs due to gamma‐ray irradiation. The carrier concentration in undoped rh‐In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> increases after irradiation, indicating that the gamma rays displace the oxygen atoms and form oxygen defects that generate donors. The high visible light transparency of rh‐In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and rh‐ITO is maintained after irradiation. This study demonstrates the high stability of rh‐ITO to gamma‐ray irradiation until 77 kGy dose. This work contributes to the application of rh‐ITO as an electrode in high‐radiation environments.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Combined Atomic Force Microscopy and Raman Spectroscopy Investigation of Fingerprints Detriment upon Liquid Exposure for Forensic Analysis 原子力显微镜和拉曼光谱联合研究法医学分析中的液体暴露对指纹的损害
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-05 DOI: 10.1002/pssb.202400333
Marco Menegazzo, Alberto Calloni, Daniele D’Ercole, Elisabetta Mei, Rossella Yivlialin, Franco Ciccacci, Lamberto Duò, Gianlorenzo Bussetti
{"title":"Combined Atomic Force Microscopy and Raman Spectroscopy Investigation of Fingerprints Detriment upon Liquid Exposure for Forensic Analysis","authors":"Marco Menegazzo, Alberto Calloni, Daniele D’Ercole, Elisabetta Mei, Rossella Yivlialin, Franco Ciccacci, Lamberto Duò, Gianlorenzo Bussetti","doi":"10.1002/pssb.202400333","DOIUrl":"https://doi.org/10.1002/pssb.202400333","url":null,"abstract":"By employing an original experimental setup combining atomic force microscopy (AFM) and Raman spectroscopy to investigate opaque substrates in a liquid environment, the stability of fingerprints (latent or with synthetic residues) left for several hours in acidic water (mimicking acid rain) is studied. It is shown that, despite the general detriment of the fingerprint after a few hours, persistent residuals are found, showing good morphological stability and a characteristic Raman spectrum, which can be considered reliable proof of the presence of a fingerprint on the investigated surface. These findings demonstrate the importance of combining microscopic and spectroscopic analyses in scientific forensic investigations.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural, Mechanical, and Thermoelectric Properties of Quaternary Heusler Compounds CuCoZrZ (Z = Sn, Pb): A First‐Principles Investigation CuCoZrZ (Z = Sn, Pb) 四元 Heusler 化合物的结构、机械和热电特性:第一原理研究
IF 1.6 4区 物理与天体物理
Physica Status Solidi B-basic Solid State Physics Pub Date : 2024-09-04 DOI: 10.1002/pssb.202400278
Tingting Lin, Qiang Gao, Jun Zhong, Suye Yu, Guodong Liu
{"title":"Structural, Mechanical, and Thermoelectric Properties of Quaternary Heusler Compounds CuCoZrZ (Z = Sn, Pb): A First‐Principles Investigation","authors":"Tingting Lin, Qiang Gao, Jun Zhong, Suye Yu, Guodong Liu","doi":"10.1002/pssb.202400278","DOIUrl":"https://doi.org/10.1002/pssb.202400278","url":null,"abstract":"The structural, mechanical, and thermoelectric properties of quaternary CuCoZrZ (Z = Sn, Pb) Heusler compounds are theoretically investigated. Both compounds are mechanically and dynamically stable. The indirect semiconductor bandgaps of 0.220 eV for CuCoZrSn and 0.197 eV for CuCoZrPb are observed using the Tran and Blaha‐modified Becke–Johnson technique. The lattice thermal conductivities, calculated by the Slack approach, are 4.69 and 6.90 W mK<jats:sup>−1</jats:sup> for CuCoZrSn and CuCoZrPb at 300 K, respectively. The relationship between thermoelectric properties and carrier concentration is studied using the BoltzTrap code. Both n‐ and p‐type CuCoZrZ (Z = Sn, Pb) compounds exhibit high ZT values, making them promising thermoelectric materials.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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