International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)最新文献

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Development of flip chip attach technology using Ag paste bump which formed on printed wiring board electrodes 利用在印刷线路板电极上形成的银膏凸点进行倒装技术的开发
H. Hirai, T. Motomura, O. Shimada, Y. Fukuoka
{"title":"Development of flip chip attach technology using Ag paste bump which formed on printed wiring board electrodes","authors":"H. Hirai, T. Motomura, O. Shimada, Y. Fukuoka","doi":"10.1109/EMAP.2000.904126","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904126","url":null,"abstract":"We have developed original flip chip attach (FCA) technology using anisotropic conductive film (ACF), which can perform electrical connection and encapsulation simultaneously. The advantages are that all bumps on the substrate are formed simultaneously and that ordinary bare chips without bumps on electrodes can be used. This paper presents the results of the FCA process for a 150 /spl mu/m pad pitch sample chip and of the reliability tests. Ag paste bumps were formed by Ag paste transfer and curing on the electrode pads of a PWB by screen-printing methods, and printing conditions were evaluated for good bump formation for this FCA process. Three kinds of ACFs with different physical properties were used for the experiment, and the FCA conditions were evaluated for each ACF. Moreover, the effect of the surface treatment on Ag paste bumps was also evaluated with regard to FCA connection resistance. Assuming that passive component assembly is done by soldering, reliability tests of the FCA samples were carried out after two additional heat treatments at reflow temperature. High-temperature and high-humidity storage tests (THS) and temperature cycling tests (TCT) were performed as reliability tests. The connection resistance between electrodes on bare chip and PWB was measured by a four-probe method. Although connection resistance increased after THS and TCT, it was saturated at under 500 /spl mu//spl Omega/ per bump in the sample with surface treated Ag bumps.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121400072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Moisture diffusion monitoring in globtop encapsulant with microdielectric sensors 微介电传感器在球形密封剂中的水分扩散监测
W. Tong, A. Teng
{"title":"Moisture diffusion monitoring in globtop encapsulant with microdielectric sensors","authors":"W. Tong, A. Teng","doi":"10.1109/EMAP.2000.904200","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904200","url":null,"abstract":"Dielectric analysis (DEA) can be an invaluable tool for characterizing the curing properties of polymers used in the electronics industry. It is also useful for moisture diffusion studies of polymer encapsulants. Its main advantage is that it can monitor cure rate or moisture uptake in-situ. The sensor used in this study is a Si chip with metal interdigitated electrodes across a polyimide film. The sensor works with the dielectrometer to monitor changes in ionic conductivity due to the presence of free ions in the polymer. The polymer permittivity was measured while it was curing or absorbing moisture. This microdielectric sensor was applied to compare the properties of globtop materials used in COB products. Good sample preparation by cleaning the sensor surface with solvent was key to preparing defect free samples. The encapsulated sensor was cured for different curing times and placed inside a temperature humidity chamber at 85/spl deg/C/85 RH% for in-situ testing. The glob top thickness above the die was 100 /spl mu/m. The results showed an increase in permittivity with moisture uptake. The magnitude of the change in permittivity after equilibration was also related to the total amount of water uptake. This curve, as has been shown by Day et al (1992), is in direct correlation to Fick's law of diffusion. Sensors encapsulated with voids or delamination in the globtop showed much faster rates of moisture uptake. This paper presents moisture diffusion rates of two globtop materials. The effects of variations in curing time (cure state) and presence of microvoiding on water diffusion rate and changes in amount of moisture uptake are also shown.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123209028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
New miniature pantograph mechanisms with large-deflective hinges for micro-bonding by adhesives 具有大偏转铰链的新型微型受电弓机构,用于粘合剂的微粘合
M. Horie, D. Kamiya, Tom Uchida, Masahiro Urata, K. Ikegami
{"title":"New miniature pantograph mechanisms with large-deflective hinges for micro-bonding by adhesives","authors":"M. Horie, D. Kamiya, Tom Uchida, Masahiro Urata, K. Ikegami","doi":"10.1109/EMAP.2000.904148","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904148","url":null,"abstract":"In this paper, a parallel arrangement of miniature size manipulators is proposed. This system can be used as a manipulator system for micro-bonding by adhesives or as surface mount systems for micro devices on a substrate in OA/AV aids, personal phones, etc. The miniature manipulator consists of a molded pantograph mechanism, which is composed of large deflective hinges and links with the same materials, i.e. polypropylene. First, the durability of the pantograph mechanism including one parallelogram is confirmed by a fatigue test. A pantograph mechanism with dimensions of hinge length 200 /spl mu/m, thickness 180 /spl mu/m, and width 5 mm was not destroyed for repeated input motion of more than one million times in the fatigue test. Next, the input and output displacement characteristics of the pantograph mechanism are experimentally discussed. The output point repeatability of the mechanism at a maximum /spl plusmn/11 /spl mu/m has been confirmed. Consequently, the feasibility of the proposed miniature pantograph mechanisms for a micro device adhesion system or a surface mount system has been shown by discussion related to the total working time compared to the traditional surface mount system. Moreover, in order to obtain a constant output link orientation, a new pantograph mechanism including three parallelograms is proposed. In the new mechanism, we confirmed that the maximum orientation angle error between vertical direction and output link moving direction is 1.61/spl times/10/sup -2/ degrees for pick working, and 1.29/spl times/10/sup -2/ degrees for place working.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116878260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Effects of flux residue and thermomechanical stresses on delamination failure in flip chip packages 熔剂残留和热机械应力对倒装封装分层失效的影响
M. Sham, Jang‐Kyo Kim
{"title":"Effects of flux residue and thermomechanical stresses on delamination failure in flip chip packages","authors":"M. Sham, Jang‐Kyo Kim","doi":"10.1109/EMAP.2000.904167","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904167","url":null,"abstract":"Electronic package reliability is influenced by thermomechanical stresses developed during assembly. Finite element analysis is conducted to evaluate stress profiles in a flip chip assembly containing defects and delaminations. Residual stresses evolved due to temperature excursions during assembly are taken into account. Parametric studies are made of the effects of the elastic modulus and CTE of underfill resin on residual stress profiles, especially at potential failure sites on the interfaces. Flux residue at the bottom corners of solder bumps does not pose a significant threat to generation of stress concentrations, and thus to package reliability during assembly and mechanical loading. However, solder underfill interface delaminations caused more than twice the stress concentrations than those with perfect interface bonding and with flux residue at the bump corners. It is proposed that these stress concentrations can be reduced systematically by optimising material properties, e.g. by increasing underfill resin elastic modulus while decreasing the solder modulus towards those of the underfill and PCB substrate. The effects of package material CTEs are discussed. Experiments are carried out to measure interface adhesion between package components in the flip chip package. Although underfill adhesive strength was stronger with passivation surfaces than solder mask surfaces, delamination was still prone to occur near the die side under mechanical loading. Surface energy measurements indicate that for similar solid surfaces, an increase in dipole hydrogen bonds led to stronger joint adhesion.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129622247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A bump reflow process with alcohol 用酒精进行凹凸回流的过程
Y. Liu, S. Zeng, J. Ma, Y. Kuang
{"title":"A bump reflow process with alcohol","authors":"Y. Liu, S. Zeng, J. Ma, Y. Kuang","doi":"10.1109/EMAP.2000.904150","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904150","url":null,"abstract":"This paper presents Pb-Sn bump reflow processing with alcohol. In one process, before a mild acid is used to remove the oxide and contamination layers on the solder surface, the bumps are reflowed in the alcohol. In the another process, the bumps are reflowed in the alcohol without the same pretreatment. By comparing the morphography, microstructure, and bump content with or without pretreatment, it is found that the mild acid helps to remove the reactive product derived from etching UBM. The function of alcohol is analysed. It is found that the alcohol prevents the bump from oxidizing, the alcohol convection strips off the oxide and contamination layers, and the alcohol acts as a weak reducing agent.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129179242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of two-metal layer flexible substrate for high density IC packaging 高密度集成电路封装用双金属层柔性基板的研制
C. Q. Cui, B. Chan, Albert So, T. Lee, Chee-wah Cheung
{"title":"Development of two-metal layer flexible substrate for high density IC packaging","authors":"C. Q. Cui, B. Chan, Albert So, T. Lee, Chee-wah Cheung","doi":"10.1109/EMAP.2000.904174","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904174","url":null,"abstract":"A two-metal layer (2-ML) flex with Cu fully filled blind vias has been developed by Compass to meet market demands, by using our developed direct Cu build-up process for high density interconnection (HDI). Unlike the conventional Cu metallization process, the direct Cu build-up processes have several advantages such as more reliable blind vias, fewer problems in blind via filling of solder masks, fine blind vias with reduced aspect ratio and better via-on-pad structure in flip chip applications. Reliability tests such as thermal shock, pressure cooker (PCT) and moisture sensitivity tests (MST) at tape level have been conducted and the results showed that the 2-ML flex passes all of these tests without any failures. The design rules for the two-metal layer flex for roll-to-roll mass production at Compass has been finalized, and prototype samples have been produced for customers for IC packaging in applications including TBGA, /spl mu/BGA, FC BGA, MCM, etc.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124566695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulation of the stencil printing process [solder pastes] 模板印刷过程模拟[焊膏]
G. Glinski, C. Bailey, K. Pericleous
{"title":"Simulation of the stencil printing process [solder pastes]","authors":"G. Glinski, C. Bailey, K. Pericleous","doi":"10.1109/EMAP.2000.904181","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904181","url":null,"abstract":"This paper describes the application of advanced computational fluid dynamics (CFD) methods to model the stencil printing process at both macroscopic and microscopic length scales. The solder paste flow is simulated on a macroscopic scale to study flow characteristics of the bulk motion of the whole paste roll as it travels ahead of a squeegee blade. The studies are performed using finite volume CFD methods, treating the paste as a continuum. Constitutive relationships are used with experimentally obtained parameters to represent the nonNewtonian properties of solder pastes. Shear rate and pressure distributions are obtained and applied as boundary conditions for microscopic studies, in which lattice-Boltzmann methods are used to couple the simultaneous solution of the solder particle dynamics and flux flow during aperture filling and stencil withdrawal. Discrete element method (DEM) type algorithms are used to control particle collisions. The simulation results are intended to provide insight into the phenomena which occur during the printing of solder paste in fine-pitch applications.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127665582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Reliability and failure analysis of voting circuits in hardware redundant design 硬件冗余设计中投票电路的可靠性与失效分析
M. Radu, D. Pitica, C. Posteuca
{"title":"Reliability and failure analysis of voting circuits in hardware redundant design","authors":"M. Radu, D. Pitica, C. Posteuca","doi":"10.1109/EMAP.2000.904192","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904192","url":null,"abstract":"This paper presents some aspects of fault-tolerant design using hardware redundancy. The voter is the key element in N-modular redundant design. Hardware voters are bit voters that compute a majority of n input bits. An m-out-of-n hardware bit voter is a circuit with n bit inputs, and 1 bit output y, such that y=1 if at least m-out-of-n input bits have the value 1. A hardware voter can be implemented with logic gates in CMOS VLSI technology. Designers are looking for optimal designs with respect to the following criteria: circuit complexity, number of logic levels, fan-in and fan-out, power dissipation, testability, or any combinations of the previous requirements in order to obtain high reliability for the voting circuits. A detailed reliability analysis, failure modes and effects analysis of voters at the transistor level, is performed using CARE tools. CARE (computer aided reliability engineering) is a powerful software tool that can be used concurrently in the phases of R&D for complex reliability analysis of electronic circuits. The main goal of these analyses is to identify the best designs of voting circuits, in terms of reliability parameters and to identify the possible technological failures that can affect them.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133021143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Board level solder joint reliability modeling of LFBGA package LFBGA封装板级焊点可靠性建模
T. Y. Tee, K. Sivakumar, A. Do-Bento-Vieira
{"title":"Board level solder joint reliability modeling of LFBGA package","authors":"T. Y. Tee, K. Sivakumar, A. Do-Bento-Vieira","doi":"10.1109/EMAP.2000.904132","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904132","url":null,"abstract":"In this paper, a 3D FEA sliced model is built for LFBGA (low profile fine pitch BGA) on board to predict the fatigue life of solder joints during thermal cycling tests. The fatigue model applied is based on Darveaux's approach with nonlinear viscoplastic analysis of solder balls. The FEA fatigue model can be applied effectively as a design guide to determine the best package configuration in terms of ball geometry, pitch, die size, substrate size, material combination, etc. The model is first correlated with 3 sets of thermal cycling data to establish a connection between the strain energy density (SED) obtained from FEA models and the actual characteristic life during the thermal cycling test. Modified correlation constants based on Darveaux's method are extracted. The FEA-thermal cycling correlation is within /spl plusmn/10% error limit. In future, when more thermal cycling test data are available, the FEA model can be fine-tuned accordingly for more confident life prediction. Then, the validated model is applied to predict the fatigue life for LFBGA and TFBGA (thin fine pitch BGA) packages. Design analysis is performed to study the effect of key package parameters such as die size, substrate size, and solder ball size. Comparison between peripheral and full arrays and the effect of thermal balls are also investigated.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134210419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Interface failure criterion of button shear test as a means of interface adhesion measurement in plastic packages 基于按钮剪切试验的塑料包装物界面粘结性检测方法
W. K. Szeto, M. Xie, J.K. Kim, M. Yuen, P. Tong, S. Yi
{"title":"Interface failure criterion of button shear test as a means of interface adhesion measurement in plastic packages","authors":"W. K. Szeto, M. Xie, J.K. Kim, M. Yuen, P. Tong, S. Yi","doi":"10.1109/EMAP.2000.904165","DOIUrl":"https://doi.org/10.1109/EMAP.2000.904165","url":null,"abstract":"The button shear test is widely used to measure the interfacial bond strength between the molding compound and leadframe. In this study, the normal and shear stress fields along the interface for a button shear test specimen with axi-symmetric cylindrical shape are analyzed using the finite element method (FEM). There are stress singularities at the loaded edge for both the interface normal and shear stress components. The shear stress component varies little over the whole bond length, except for the free edge surface, whereas the normal stress component decreases consistently over the bond length from positive to negative values. Therefore, while the average normal stress increases as the loading position moves upward, the average shear stress remains almost constant, independent of loading position. The failure loads obtained for different loading positions in experiments are incorporated into the numerical results to derive the interface failure criterion based on the average stress concept. The interface shear strength was much higher than the interface normal strength, especially for bare copper, which showed 2.5 times difference in these interface strength values. This indicates that the leadframe surface roughness played a significant role in contributing to the interface bond strength. This is consistent with the predominant role of the normal stress component for interface debonding in the button shear test.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"19 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134404144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
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