physica status solidi (b)最新文献_第10页

Characterizing Curie and Néel Point Phase Transitions via Thermal Techniques 用热技术表征居里点和nsamel点相变

physica status solidi (b) Pub Date : 2023-05-17 DOI: 10.1002/pssb.202300008

Jejitti Aravind Reddy, Annu Kumar Lakshya, R. Raj, L. Kumar, A. Chowdhury

{"title":"Characterizing Curie and Néel Point Phase Transitions via Thermal Techniques","authors":"Jejitti Aravind Reddy, Annu Kumar Lakshya, R. Raj, L. Kumar, A. Chowdhury","doi":"10.1002/pssb.202300008","DOIUrl":"https://doi.org/10.1002/pssb.202300008","url":null,"abstract":"Various magnetic materials (for example, ferro, ferri, antiferromagnetic) are characterized by their respective transition temperatures (for example, Curie and Néel transitions). Knowledge of these transition temperatures is vital from an application standpoint. Accurate measurements by suitable characterization techniques are needed for identifying these transitions. Several techniques have been used to identify Curie and Néel transition temperatures, with thermal methods being one of the preferred choice. These thermal methods include differential scanning calorimetry (DSC), differential thermal analysis, and thermogravimetric analysis. Although thermal analysis tools have been popularly used for examining magnetic phase transitions, still much confusion exists on their efficacy and might. This review article highlights the strength and limitations of measuring Curie and Néel transitions by thermal techniques; measurements by DSC were the most common choice in previous works. Considering the intrinsic/fundamental nature of these Curie/Néel transitions, such confusion on their measurements (by thermal techniques) and their subsequent analysis (for the order of transition) suggests that a more comprehensive understanding of the events should be an immediate future goal for the research community, at large.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83106518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear Optical Properties of Al0.3Ga0.7As/GaAs Quantum Dots under Tunable Parameters 可调参数下Al0.3Ga0.7As/GaAs量子点的非线性光学特性

physica status solidi (b) Pub Date : 2023-05-17 DOI: 10.1002/pssb.202300094

Xing Wang, Xuechao Li

{"title":"Nonlinear Optical Properties of Al0.3Ga0.7As/GaAs Quantum Dots under Tunable Parameters","authors":"Xing Wang, Xuechao Li","doi":"10.1002/pssb.202300094","DOIUrl":"https://doi.org/10.1002/pssb.202300094","url":null,"abstract":"The nonlinear optical properties of quantum dots under multidimensional confinement potential are investigated. In the framework of the effective mass approximation, the analytical formula of the optical absorption coefficient in the quantum dots is derived using the density matrix method and the iterative procedure, and the numerical results of typical Al0.3Ga0.7 As/GaAs material are calculated. Through calculation and numerical fitting, it is found that increasing temperature and the depth of limiting potential will give rise to the absorption peak to move to the high‐energy region commonly referred to as the blueshift, within a certain range of parameter variations. While reducing the range of limiting potential, quantum dot radius and the hydrostatic pressure can achieve the same effect. It is important to emphasize that variations in hydrostatic pressure and the depth of the limiting potential result in significant changes to the peak value of the optical absorption coefficient. The research results have a certain guiding significance for further study of the optical properties of quantum dots under multidimensional confinement potential and their application in practical production.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88079686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Photoluminescence from GaN Implanted with Be and F 氮化镓注入Be和F的光致发光研究

physica status solidi (b) Pub Date : 2023-05-16 DOI: 10.1002/pssb.202300131

M. Reshchikov, O. Andrieiev, M. Vorobiov, Denis O. Demchenko, B. McEwen, Shadi Shahedipour-Sandvik

引用次数: 1

Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates 面对面退火溅射沉积AlN模板制备GaN/AlN超晶格富金属生长的控制

physica status solidi (b) Pub Date : 2023-05-16 DOI: 10.1002/pssb.202300061

Naoya Mokutani, M. Deura, S. Mouri, K. Shojiki, S. Xiao, H. Miyake, T. Araki

{"title":"Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates","authors":"Naoya Mokutani, M. Deura, S. Mouri, K. Shojiki, S. Xiao, H. Miyake, T. Araki","doi":"10.1002/pssb.202300061","DOIUrl":"https://doi.org/10.1002/pssb.202300061","url":null,"abstract":"GaN/AlN superlattices consisting of few‐monolayer GaN wells have attracted considerable attention for use in deep‐ultraviolet (DUV) light‐emitting devices. To avoid the formation of droplets and AlGaN interface layers, precise growth control is essential for fabricating superlattices with flat and abrupt interfaces. Herein, GaN/AlN superlattice structures are grown on face‐to‐face‐annealed sputter‐deposited AlN (FFA Sp‐AlN) template substrates using radio‐frequency plasma‐excited molecular beam epitaxy (RF‐MBE) utilizing in situ reflection high‐energy electron diffraction (RHEED) monitoring. Both AlN and GaN are grown under metal‐rich conditions, and subsequently, the droplets are eliminated by droplet elimination by radical beam irradiation (DERI) method for AlN and by growth interruption for GaN. Furthermore, the dependence of AlN thickness on the properties of superlattices is investigated. The AlN thickness changes linearly with the supply time of the Al metal; thus, the AlN thickness is easily controllable. A total of 20‐period GaN/AlN superlattices with flat and abrupt interfaces is fabricated, as confirmed using atomic force microscopy and X‐ray diffraction. Cathodoluminescence with a peak wavelength of 230–260 nm at room temperature is obtained from the fabricated superlattices. Moreover, the emission wavelength shifts with an increase in AlN thickness.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75103905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Molecular Dynamics Simulation of Solution Strengthening of Si and Cu Atoms in Aluminum Alloy 铝合金中Si和Cu原子固溶强化的分子动力学模拟

physica status solidi (b) Pub Date : 2023-05-13 DOI: 10.1002/pssb.202300108

Shining Kong, Jianyu Li, Zhao Zhang

引用次数: 1

Effect of Surface Energetics on Phase Stability of CaMnO3 表面能量学对CaMnO3相稳定性的影响

physica status solidi (b) Pub Date : 2023-05-12 DOI: 10.1002/pssb.202300031

B. Grimm, T. Bredow

引用次数: 0

Tetragonal and Orthorhombic Phases in Polycrystalline Sr4Ir3O10 Synthesized by High‐Pressure and High‐Temperature Technique 高压高温合成Sr4Ir3O10多晶的四方相和正交相

physica status solidi (b) Pub Date : 2023-05-12 DOI: 10.1002/pssb.202300050

Huaixiang Wang, D. Lu, Weipeng Wang, Yifan Ding, Yu Ji, X. Shen, Yuan Yao, Y. Long, R. Yu

引用次数: 1

Investigating the Role of Ag and Ga Content in the Stability of Wide‐Gap (Ag,Cu)(In,Ga)Se2 Thin‐Film Solar Cells Ag和Ga含量对宽间隙(Ag,Cu)(in,Ga)Se2薄膜太阳能电池稳定性的影响研究

physica status solidi (b) Pub Date : 2023-05-11 DOI: 10.1002/pssb.202300170

P. Pearson, J. Keller, L. Stolt, Charlotte Platzer Björkman

{"title":"Investigating the Role of Ag and Ga Content in the Stability of Wide‐Gap (Ag,Cu)(In,Ga)Se2 Thin‐Film Solar Cells","authors":"P. Pearson, J. Keller, L. Stolt, Charlotte Platzer Björkman","doi":"10.1002/pssb.202300170","DOIUrl":"https://doi.org/10.1002/pssb.202300170","url":null,"abstract":"The stability of thin‐film solar cells spanning a wide range of compositions within the (Ag,Cu)(In,Ga)Se2 material system is evaluated over time, after dry‐heat annealing and after light soaking, and the role of Ag and Ga content is explored. Ag‐free CuInSe2 is relatively stable to annealing and storage, while Cu(In,Ga)Se2 suffers a degradation of fill factor and carrier collection. High‐Ga (Ag,Cu)(In,Ga)Se2 suffers degradation of carrier collection after prolonged annealing, reducing the short‐circuit current by ≈12%. Ga‐free (Ag,Cu)InSe2 loses up to a third of open‐circuit voltage and a quarter of fill factor after all treatments are applied. All samples suffer voltage losses after light soaking, with the Ga‐free devices losing up to 50 mV and those containing Ga losing up to 90 mV. Ag incorporation leads to a significant reduction in doping, and a significant increase in the response of doping to treatments, with the depletion width of (Ag,Cu)(In,Ga)Se2 samples expanding from ≈0.1 μm as‐grown to beyond 1.0 μm after all treatments, compared to the Cu(In,Ga)Se2 sample variation of ≈0.1–0.3 μm. Connections between Ag content, doping instability, and performance degradation are discussed.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85919082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence 空间分辨和温度相关光致发光研究InGaAs/InP p-i-n焦平面阵列的γ辐照损伤机制

physica status solidi (b) Pub Date : 2023-05-10 DOI: 10.1002/pssb.202200546

Y. Cai, Liangqing Zhu, Le Wang, Liyan Shang, Ya-wei Li, Jinzhong Zhang, K. Jiang, Zhigao Hu

{"title":"γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence","authors":"Y. Cai, Liangqing Zhu, Le Wang, Liyan Shang, Ya-wei Li, Jinzhong Zhang, K. Jiang, Zhigao Hu","doi":"10.1002/pssb.202200546","DOIUrl":"https://doi.org/10.1002/pssb.202200546","url":null,"abstract":"InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature‐dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre‐irradiation and post‐irradiation, the spatially resolved PL results of irradiation indicate that the in‐plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature‐dependence PL demonstrate that the PL integral intensity related to impurities and interface‐bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low‐dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86116188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Onset of Antiferromagnetic Insulator‐to‐Ferromagnetic Half Metal‐to‐Antiferromagnetic Metal Transitions in La1−xCaxCrO3 and their Microscopic Origin La1−xCaxCrO3中反铁磁绝缘体-铁磁半金属-反铁磁金属转变的开始及其微观起源

physica status solidi (b) Pub Date : 2023-05-10 DOI: 10.1002/pssb.202300065

Jeel Swami, A. Dixit, B. Tiwari

引用次数: 1