Yibo Sun, Cong Hou, Nguyen-Dung Tran, Yuhang Lu, Zimo Li, Ying Chen, Jun Ni
{"title":"EFTGAN: Elemental features and transferring corrected data augmentation for the study of high-entropy alloys","authors":"Yibo Sun, Cong Hou, Nguyen-Dung Tran, Yuhang Lu, Zimo Li, Ying Chen, Jun Ni","doi":"10.1038/s41524-025-01548-y","DOIUrl":"https://doi.org/10.1038/s41524-025-01548-y","url":null,"abstract":"<p>Using machine learning to predict and design materials is an important mean of accelerating material development. One way to improve the accuracy of machine learning predictions is to introduce material structures as descriptors. However, the complexity of computing material structures limits the practical use of these models. To address this challenge and improve prediction accuracy in small data sets, we develop a generative network framework: Elemental Features enhanced and Transferring corrected data augmentation in Generative Adversarial Networks (EFTGAN). Combining the elemental convolution technique with Generative Adversarial Networks (GAN), EFTGAN provides a robust and efficient approach for generating data containing elemental and structural information that can be used not only for data augmentation to improve model accuracy, but also for prediction when the structures are unknown. Applying this framework to the FeNiCoCrMn/Pd high-entropy alloys, we successfully improve the prediction accuracy in a small data set and predict the concentration-dependent formation energies, lattices, and magnetic moments in quinary systems. This study provides a new algorithm to improve the performance and usability of deep learning with structures as inputs, which is effective and accurate for the prediction and development of materials for small data sets.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"1 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143528266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Stacking-dependent electronic and topological properties in van der Waals antiferromagnet MnBi2Te4 films","authors":"Jiaheng Li, Quansheng Wu, Hongming Weng","doi":"10.1038/s41524-025-01545-1","DOIUrl":"https://doi.org/10.1038/s41524-025-01545-1","url":null,"abstract":"<p>Combining first-principles calculations and tight-binding Hamiltonians, we study the stack-dependent behaviour of electronic and topological properties of layered antiferromagnet MnBi<sub>2</sub>Te<sub>4</sub>. Lateral shift of top septuple-layer greatly modifies electronic properties, and even induces topological phase transition between quantum anomalous Hall (QAH) insulators with <i>C</i> = 1 and trivial magnetic insulators with <i>C</i> = 0. The local energy minimum of “incorrect\" stacking order exhibits thickness-dependent topology opposite to the usual stacking order, which is attribute to relatively weakened interlayer Te-Te interaction in “incorrect\" stacking configuration. Our effective model analysis provides a comprehensive understanding of the underlying mechanisms involved, and we also propose two optical setups that can effectively differentiate between different stacking configurations. Our findings underscores the nuanced and profound influence that interlayer sliding in magnetic topological materials can have on the macroscopic quantum states, opening new avenues for the design and engineering of topological quantum materials.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"52 4 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143526060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xuefeng Bai, Song He, Yi Li, Yabo Xie, Xin Zhang, Wenli Du, Jian-Rong Li
{"title":"Construction of a knowledge graph for framework material enabled by large language models and its application","authors":"Xuefeng Bai, Song He, Yi Li, Yabo Xie, Xin Zhang, Wenli Du, Jian-Rong Li","doi":"10.1038/s41524-025-01540-6","DOIUrl":"https://doi.org/10.1038/s41524-025-01540-6","url":null,"abstract":"<p>Framework materials (FMs) have been extensively investigated with a plethora of literature documenting their unique properties and potential applications. Despite this, a comprehensive knowledge graph for this emerging field has not yet been constructed. In this study, by utilizing the natural language processing capabilities of large language models (LLMs), we have established a comprehensive knowledge graph (KG-FM). It covers synthesis, properties, applications, and other aspects of FMs including metal-organic frameworks (MOFs), covalent-organic frameworks (COFs), and hydrogen-bonded organic frameworks (HOFs). The knowledge graph was constructed through the analysis of over 100,000 articles, resulting in 2.53 million nodes and 4.01 million relationships. Subsequently, its application has been explored for enhancing data retrieval, mining, and the development of sophisticated question-answering systems. Especially when integrating the KGs with LLMs, resulted Qwen2-KG not only achieves a higher accuracy rate of 91.67% in question-answering than existing models but also provides precise information sources.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"31 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143518765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lukáš Kývala, Pablo Montero de Hijes, Christoph Dellago
{"title":"Unsupervised identification of crystal defects from atomistic potential descriptors","authors":"Lukáš Kývala, Pablo Montero de Hijes, Christoph Dellago","doi":"10.1038/s41524-025-01544-2","DOIUrl":"https://doi.org/10.1038/s41524-025-01544-2","url":null,"abstract":"<p>Identifying crystal defects is vital for unraveling the origins of many physical phenomena. Traditionally used order parameters are system-dependent and can be computationally expensive to calculate for long molecular dynamics simulations. Unsupervised algorithms offer an alternative independent of the studied system and can utilize precalculated atomistic potential descriptors from molecular dynamics simulations. We compare the performance of three such algorithms (PCA, UMAP, and PaCMAP) on silicon and water systems. Initially, we evaluate the algorithms for recognizing phases, including crystal polymorphs and the melt, followed by an extension of our analysis to identify interstitials, vacancies, and interfaces. While PCA is found unsuitable for effective classification, it has been shown to be a suitable initialization for UMAP and PaCMAP. Both UMAP and PaCMAP show promising results overall, with PaCMAP proving more robust in classification, except in cases of significant class imbalance, where UMAP performs better. Notably, both algorithms successfully identify nuclei in supercooled water, demonstrating their applicability to ice nucleation in water.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"1 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143518836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Efficient equivariant model for machine learning interatomic potentials","authors":"Ziduo Yang, Xian Wang, Yifan Li, Qiujie Lv, Calvin Yu-Chian Chen, Lei Shen","doi":"10.1038/s41524-025-01535-3","DOIUrl":"https://doi.org/10.1038/s41524-025-01535-3","url":null,"abstract":"<p>In modern computational materials, machine learning has shown the capability to predict interatomic potentials, thereby supporting and accelerating conventional molecular dynamics (MD) simulations. However, existing models typically sacrifice either accuracy or efficiency. Moreover, efficient models are highly demanded for offering simulating systems on a considerably larger scale at reduced computational costs. Here, we introduce an efficient equivariant graph neural network (E<sup>2</sup>GNN) that can enable accurate and efficient interatomic potential and force predictions for molecules and crystals. Rather than relying on higher-order representations, E<sup>2</sup>GNN employs a scalar-vector dual representation to encode equivariant features. By learning geometric symmetry information, our model remains efficient while ensuring prediction accuracy and robustness through the equivariance. Our results show that E<sup>2</sup>GNN consistently outperforms the prediction performance of the representative baselines and achieves significant efficiency across diverse datasets, which include catalysts, molecules, and organic isomers. Furthermore, we conduct MD simulations using the E<sup>2</sup>GNN force field across solid, liquid, and gas systems. It is found that E<sup>2</sup>GNN can achieve the accuracy of ab initio MD across all examined systems.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"30 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143507379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nikhilesh Maity, Milan Haddad, Nazanin Bassiri-Gharb, Amit Kumar, Lewys Jones, Sergey Lisenkov, Inna Ponomareva
{"title":"Ferroelectricity at the extreme thickness limit in the archetypal antiferroelectric PbZrO3","authors":"Nikhilesh Maity, Milan Haddad, Nazanin Bassiri-Gharb, Amit Kumar, Lewys Jones, Sergey Lisenkov, Inna Ponomareva","doi":"10.1038/s41524-025-01520-w","DOIUrl":"https://doi.org/10.1038/s41524-025-01520-w","url":null,"abstract":"<p>Size-driven transition of aNote, that the phasesn antiferroelectric into a polar ferroelectric or ferrielectric state is a strongly debated issue from both experimental and theoretical perspectives. While critical thickness limits for such transitions have been explored, a bottom-up approach in the ultrathin limit considering few atomic layers could provide insight into the mechanism of stabilization of the polar phases over the antipolar phase seen in bulk PbZrO<sub>3</sub>. Here, we use first-principles density functional theory to predict the stability of polar phases in Pt/PbZrO<sub>3</sub>/Pt nanocapacitors. In a few atomic layer thick slabs of PbZrO<sub>3</sub> sandwiched between Pt electrodes, we find that the polar phase originating from the well established <i>R3c</i> phase of bulk PbZrO<sub>3</sub> is energetically favorable over the antipolar phase originating from the <i>Pbam</i> phase of bulk PbZrO<sub>3</sub>. The famous triple-well potential of antiferroelectric PbZrO<sub>3</sub> is modified in the nanocapacitor limit in such a way as to swap the positions of the global and local minima, stabilizing the polar phase relative to the antipolar one. The size effect is decomposed into the contributions from dimensionality reduction, surface charge screening, and interfacial relaxation, which reveals that it is the creation of well-compensated interfaces that stabilizes the polar phases over the antipolar ones in nanoscale PbZrO<sub>3</sub>.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"89 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143486274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fanglei Hu, Stephen Niezgoda, Tianju Xue, Jian Cao
{"title":"Efficient GPU-computing simulation platform JAX-CPFEM for differentiable crystal plasticity finite element method","authors":"Fanglei Hu, Stephen Niezgoda, Tianju Xue, Jian Cao","doi":"10.1038/s41524-025-01528-2","DOIUrl":"https://doi.org/10.1038/s41524-025-01528-2","url":null,"abstract":"<p>We present the formulation and applications of JAX-CPFEM, an open-source, GPU-accelerated, and differentiable 3-D crystal plasticity finite element method (CPFEM) software package. Leveraging the modern computing architecture JAX, JAX-CPFEM features high performance through array programming and GPU acceleration, achieving a 39× speedup in a polycrystal case with ~52,000 degrees of freedom compared to MOOSE with MPI (8 cores). Furthermore, JAX-CPFEM utilizes the automatic differentiation technique, enabling users to handle complex, non-linear constitutive materials laws without manually deriving the case-specific Jacobian matrix. Beyond solving forward problems, JAX-CPFEM demonstrates its potential in an inverse design pipeline, where initial crystallographic orientations of polycrystal copper are optimized to achieve targeted mechanical properties under deformations. The end-to-end differentiability of JAX-CPFEM allows automatic sensitivity calculations and high-dimensional inverse design using gradient-based optimization. The concept of differentiable JAX-CPFEM provides an affordable, flexible, and multi-purpose tool, advancing efficient and accessible computational tools for inverse design in smart manufacturing.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"50 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143470614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qiang Gao, Zhengneng Zheng, Moshang Fan, Lin-Wang Wang
{"title":"First principles calculations of carrier dynamics of screw dislocation","authors":"Qiang Gao, Zhengneng Zheng, Moshang Fan, Lin-Wang Wang","doi":"10.1038/s41524-025-01533-5","DOIUrl":"https://doi.org/10.1038/s41524-025-01533-5","url":null,"abstract":"<p>Nonradiative carrier recombination (NCR) in semiconductor is a fundamental process determining the efficiencies of many semiconductor devices. There is a longstanding debate on which line defect is an efficient NCR center, especially in third generation semiconductor. Here we developed a systematic method to calculate the electronic structure and NCR dynamics of screw dislocation. We studied the full-core screw dislocation of GaN with atomic structure taken from TEM images, and found that there are inside band gap dislocation states. Under <i>n</i>-type GaN condition, these band gap states will become occupied, making the core negatively charged, and inducing a potential well, which will attract minority hole carriers. Large-scale NAMD simulation shows that the holes can easily jump across a small band gap in the dislocation state band structure and hence will be annihilated with the electron nonradiatively, which agrees with the experimental observation of the photoluminescence dark spot on each dislocation.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"18 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143462441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A physics-enforced neural network to predict polymer melt viscosity","authors":"Ayush Jain, Rishi Gurnani, Arunkumar Rajan, H.Jerry Qi, Rampi Ramprasad","doi":"10.1038/s41524-025-01532-6","DOIUrl":"https://doi.org/10.1038/s41524-025-01532-6","url":null,"abstract":"<p>Achieving superior polymeric components through additive manufacturing (AM) relies on precise control of rheology. One rheological property particularly relevant to AM is melt viscosity (<i>η</i>). <i>η</i> is influenced by polymer chemistry, molecular weight (<i>M</i><sub><i>w</i></sub>), polydispersity, shear rate (<span>({dot{gamma}})</span>), and temperature (<i>T</i>). The relationship of <i>η</i> with <i>M</i><sub><i>w</i></sub>, <span>({dot{gamma }})</span>, and <i>T</i> is captured by parameterized equations. Several physical experiments are required to fit the parameters, so predicting <i>η</i> of new polymer materials in unexplored physical domains is laborious. Here, we develop a Physics-Enforced Neural Network (PENN) model that predicts the empirical parameters and encodes the parametrized equations to calculate <i>η</i> as a function of polymer chemistry, <i>M</i><sub><i>w</i></sub>, polydispersity, <span>({dot{gamma }})</span>, and <i>T</i>. We benchmark our PENN against physics-unaware Artificial Neural Network (ANN) and Gaussian Process Regression (GPR) models. We demonstrate that the PENN offers superior values of <i>η</i> when extrapolating to unseen values of <i>M</i><sub><i>w</i></sub>, <span>({dot{gamma }})</span>, and <i>T</i> for sparsely seen polymers.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"52 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The interplay between the martensitic transformation rate and the rate of plastic relaxation during martensitic transformation in low-carbon steel, a phase-field study","authors":"Hesham Salama, Oleg Shchyglo, Ingo Steinbach","doi":"10.1038/s41524-024-01499-w","DOIUrl":"https://doi.org/10.1038/s41524-024-01499-w","url":null,"abstract":"The complex interplay between the rapid martensitic transformation and the plastic relaxation during martensitic transformation in low-carbon steel is investigated using a combined phase-field and phenomenological crystal plasticity approach. The large transformation-induced deformations and local lattice rotations are rigorously described within the finite strain framework. The study reveals that plastic relaxation plays a crucial role in accommodating the transformation-induced deformations of martensite in the parent austenite phase. By systematically varying the plastic slip rate, imposed cooling rate, and carbon content, the simulations provide insights into the interdependence between these factors, contributing to a better understanding of the martensitic transformation process and the resulting microstructures. The phenomenological crystal plasticity model effectively relates the plastic relaxation rate to the rate of martensitic transformation with a significant time scale difference between the two processes. The findings contribute to a deeper understanding of the interplay between the rapid martensitic transformation and the requirement for plastic deformation.","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"2 1","pages":""},"PeriodicalIF":9.7,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143462442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}