2008 IEEE International Reliability Physics Symposium最新文献_第3页

Reliability considerations for implantable medical ICs 植入式医疗集成电路的可靠性考虑

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558939

M. Porter, P. Gerrish, L. Tyler, S. Murray, R. Mauriello, F. Soto, G. Phetteplace, S. Hareland

引用次数: 22

study of incremental step pulse programming (ISPP) and STI edge effect of BE-SONOS NAND Flash BE-SONOS NAND闪存的增量步进脉冲编程(ISPP)和STI边缘效应研究

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558992

H. Lue, T. Hsu, Szu-Yu Wang, E. Lai, K. Hsieh, R. Liu, Chih-Yuan Lu

引用次数: 56

Nanostructured polymer solar cells 纳米结构聚合物太阳能电池

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558881

D. Xi, Chenjun Shi, Yan Yao, Yang Yang, Q. Pei

引用次数: 6

The effect of current direction on the electromigration in short-lines with reservoirs 电流方向对含储层短线电迁移的影响

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558916

C. Hau-Riege, A. Marathe, Z.-S. Choi

{"title":"The effect of current direction on the electromigration in short-lines with reservoirs","authors":"C. Hau-Riege, A. Marathe, Z.-S. Choi","doi":"10.1109/RELPHY.2008.4558916","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558916","url":null,"abstract":"We have conducted electromigration tests on Cu/low-k standard short-line structures as well as those with varying numbers of reservoirs. We found that the presence and number of reservoirs as well as current direction relative to the reservoir led to markedly different electromigration performance in terms of lifetime and distribution shape. That is, in the case of a reservoir by the anode (or electron sink) line-end, lifetimes were similar or slightly better than the In the case of a reservoir by the cathode (or electron source) line-end, lifetimes were extremely longer than the long-line case or even immortal. Further, the distribution of the cathode reservoir structure exhibited a roll-over shape, in which the first fails corresponded to small void sizes and the later fails corresponded to larger void sizes. We believe these observations are related to the differences in stress development during electromigration, which will be constrained at the line-end at which the reservoir is present, and has been verified through simulation. Finally, we propose a method for assigning an equivalent length to these complex short-line configurations which indicates a ldquostrengthrdquo of the short-line benefit which would be equivalent to that of a standard short-line.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125296023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Impact of IC wafer fab and assembly fab processes on package stress induced product reliability issues - an insight into the package stress relief design rules by simulation 集成电路晶圆厂和组装厂工艺对封装应力引起的产品可靠性问题的影响——通过仿真深入了解封装应力消除设计规则

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558928

Y. Li, M. van Gils, W. V. van Driel, R. van Silfhout, J. Bisschop, J. Janssen, G.Q. Zhang

引用次数: 1

Influence of pre-existing and generated traps on reliability in HfSiON/SiO2 stacks with fluorine incorporation 已有陷阱和产生陷阱对氟掺杂HfSiON/SiO2堆可靠性的影响

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558975

I. Hirano, T. Yamaguchi, Y. Nakasaki, K. Sekine, Y. Mitani

引用次数: 0

Multi-cell upset probabilities of 45nm high-k + metal gate SRAM devices in terrestrial and space environments 45纳米高k +金属栅极SRAM器件在地面和空间环境下的多单元破坏概率

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558882

N. Seifert, B. Gill, K. Foley, P. Relangi

{"title":"Multi-cell upset probabilities of 45nm high-k + metal gate SRAM devices in terrestrial and space environments","authors":"N. Seifert, B. Gill, K. Foley, P. Relangi","doi":"10.1109/RELPHY.2008.4558882","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558882","url":null,"abstract":"Multi-cell soft errors are a key reliability concern for advanced memory devices. We have investigated single-bit (SBU) and multi-cell upset (MCU) rates of SRAM devices built in a 45 nm high-k + metal gate (HK+MG) technology under neutron, proton and heavy-ion radiation. Our data highlight the excellent soft error reliability scaling properties of HK+MG. MCU rates were kept at 10% or less of SBU ones and bit-level SBU rates continue to decrease 2times per technology generation for terrestrial applications. SRAM upset rates in orbit are projected to be 2 to 4 orders of magnitude higher than at sea-level. A dramatic increase in MCU rates relative to SBU is projected for geosynchronous orbits, where direct ionization by heavy-ions dominates. No indication of charge amplification by parasitic bipolar devices has been observed for all investigated radiation environments. The observation that SBU error rates and small MCU error rates are elevated at locations in close proximity to well contacts for high LET values is speculated to be the result of the formation of a funnel between well contacts and sensitive drains.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133207771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 91

A case study: Design for reliability for a rail-to-rail operational amplifier for wide temperature range operation for Mars missions 案例研究:用于火星任务宽温度范围操作的轨对轨运算放大器的可靠性设计

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558872

Yuan Chen, M. Mojarradi, L. Westergard, N. Aranki, E. Kolawa, B. Blalock

引用次数: 4

Hermeticity testing of capacitive RF MEMS switches 电容式射频MEMS开关的密封性测试

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558991

P. van der Wel, J. Stulemeijer, J. Bielen, F. Theunis, A. den Dekker, M. van Gils, R. Havens

{"title":"Hermeticity testing of capacitive RF MEMS switches","authors":"P. van der Wel, J. Stulemeijer, J. Bielen, F. Theunis, A. den Dekker, M. van Gils, R. Havens","doi":"10.1109/RELPHY.2008.4558991","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558991","url":null,"abstract":"RF MEMS capacitive switches can be used for band switching and adaptive antenna matching in cell phone Front End Modules. They are extremely linear and, if made in standard silicon technology, can be integrated into other applications in the phone. Many efforts have been put in the intrinsic reliability of the RF MEMS capacitive switches. The main failure mechanism is stiction due to dielectric charging. The progress made in RF MEMS processing has shifted the focus towards the package. It is generally accepted that a hermetic package is needed to keep the effect of charging within specification. Since packages are very small (typically 300nl), new hermeticity tests are needed because the leak rate tests are not sensitive enough for these small packages. In this paper we demonstrate the reliability of a capacitive RF MEMS switch package. The product is assembled using a AuSn bonding process in which a Silicon cap wafer is assembled on top of the MEMS die. The package is filled with pure N2 to the desired pressure. Hermeticity is determined by measuring the pressure dependence of the mechanical resonance of the MEMS top electrode. First we will describe the method we have used to determine the pressure inside the cavity and how to apply that to hermeticity testing. Second, we describe how the requirements for the leak rate of the package can be determined. Finally we show with the use of temperature, humidity and high pressure N2 testing that our package fulfills these requirements. Although the method may not be new, the combination of extensive reliability testing and understanding the RF MEMS device using FEM simulations has not been reported before.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133375511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications 五氧化二钽金属-绝缘体-金属(MIM)电容器的新见解:泄漏电流建模，自加热，可靠性评估和工业应用

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558891

V. Martinez, C. Besset, F. Monsieur, D. Ney, L. Montès, G. Ghibaudo

引用次数: 3