ESD认证模式的转变

C. Duvvury
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引用次数: 28

摘要

20多年来,IC组件级ESD要求基本保持不变,而硅技术迅速发展,有效的生产控制方法得到了极大的改善。来自技术规模的硅面积影响,加上高速电路性能的影响和IC封装技术进步的影响,使ESD设计达到当前水平,导致产品创新周期的永久延迟。如今,psilas增强的控制方法并不能证明这种ESD过度设计是合理的。本文将根据从IC供应商和合同制造商收集的现场数据,提出一种更现实但更安全的ESD目标水平的范式转变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Paradigm shift in ESD qualification
For more than 20 years, IC component level ESD requirements have essentially stayed constant, while the silicon technologies rapidly advanced and effective production control methods have vastly improved. The silicon area impact coming from the technology scaling, combined with the high speed circuit performance impact and the influence from the IC package technology advances, are making the ESD design to the current levels a constraint leading to permanent delays in the product innovative cycles. Todaypsilas enhanced control methods do not justify this ESD over-design. This paper will propose a paradigm shift to more realistic but safe ESD target levels based on field data collected from IC suppliers and contract manufacturers.
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