Reliability and radiation effects in IC technologies

peixiong zhao, K. Warren, R. Weller, R. Reed, L. Massengill, M. Alles, D. Fleetwood, X.J. Zhou, L. Tsetseris, S. Pantelides
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引用次数: 38

Abstract

The reliability of advanced integrated circuit (IC) technologies may be dominated by the interaction of environmental radiation with the devices in the ICs. In particular, single event upsets (SEUs) and soft errors produced by single energetic particles may have a significant impact on the error rate of digital ICs. Additionally, some of the mechanisms responsible for long-term degradation of ICs under normal operating conditions are related to degradation mechanisms produced by ionizing radiation. This paper reviews issues related to prediction of error rates in ICs and discusses the roles of hydrogen in bias-temperature instability and total-ionizingdose radiation sensitivity.
集成电路技术中的可靠性和辐射效应
先进集成电路(IC)技术的可靠性可能取决于环境辐射与集成电路中器件的相互作用。特别是单事件扰动(SEUs)和单个高能粒子产生的软误差可能对数字集成电路的错误率产生重大影响。此外,在正常工作条件下导致ic长期降解的一些机制与电离辐射产生的降解机制有关。本文综述了集成电路误差率预测的相关问题,并讨论了氢在偏温不稳定性和总电离剂量辐射敏感性中的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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