Microelectron. J.最新文献

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Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study 奈米片场效应晶体管——维持摩尔定律的新世代装置:深入研究
Microelectron. J. Pub Date : 2021-06-16 DOI: 10.1016/J.MEJO.2021.105141
J. Ajayan, D. Nirmal, Shubham Tayal, S. Bhattacharya, L. Arivazhagan, A. Fletcher, P. Murugapandiyan, D. Ajitha
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引用次数: 32
Newly energy-efficient SRAM bit-cell using GAA CNT-GDI method with asymmetrical write and built-in read-assist schemes for QR code-based multimedia applications 采用GAA CNT-GDI方法的新型节能SRAM位单元,具有非对称写入和内置读取辅助方案,用于基于QR码的多媒体应用
Microelectron. J. Pub Date : 2021-06-12 DOI: 10.1016/J.MEJO.2021.105117
Abdolreza Darabi, M. Salehi, E. Abiri
{"title":"Newly energy-efficient SRAM bit-cell using GAA CNT-GDI method with asymmetrical write and built-in read-assist schemes for QR code-based multimedia applications","authors":"Abdolreza Darabi, M. Salehi, E. Abiri","doi":"10.1016/J.MEJO.2021.105117","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105117","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"50 1","pages":"105117"},"PeriodicalIF":0.0,"publicationDate":"2021-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77931776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design of wideband phase shifter with edge-coupled semi-elliptical lines 边缘耦合半椭圆线宽带移相器的设计
Microelectron. J. Pub Date : 2021-06-11 DOI: 10.1016/J.MEJO.2021.105143
Y. Lo, B. Chung, E. Lim
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引用次数: 0
Impact of thermally -aware environmental conditions on double gate carbon nanotube FET 热敏感环境条件对双栅碳纳米管场效应管的影响
Microelectron. J. Pub Date : 2021-06-10 DOI: 10.1016/J.MEJO.2021.105146
Aakanksha Lakhanpal, K. S. Sandha
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引用次数: 3
A 0.13-μm CMOS resonator-based frequency-doubling mechanism for clock recovery in a full-rate 40 Gb/s optical receiver 基于0.13 μm CMOS谐振器的全速率40gb /s光接收机时钟恢复倍频机制
Microelectron. J. Pub Date : 2021-06-03 DOI: 10.1016/J.MEJO.2021.105137
Joseph Chong, Fariborz Lohrabi Pour, D. Ha
{"title":"A 0.13-μm CMOS resonator-based frequency-doubling mechanism for clock recovery in a full-rate 40 Gb/s optical receiver","authors":"Joseph Chong, Fariborz Lohrabi Pour, D. Ha","doi":"10.1016/J.MEJO.2021.105137","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105137","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"28 1","pages":"105137"},"PeriodicalIF":0.0,"publicationDate":"2021-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74855601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1 GS/s 10bit SAR ADC with background calibration in 28 nm CMOS 一个1 GS/s的10位SAR ADC与背景校准在28纳米CMOS
Microelectron. J. Pub Date : 2021-06-02 DOI: 10.1016/J.MEJO.2021.105120
Zheng Qiu, Yudong Ouyang, Lijie Yang, Liqi Sun
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引用次数: 4
Stability of single-stage single-bit ∑Δ modulator 单级单比特∑Δ调制器的稳定性
Microelectron. J. Pub Date : 2021-05-29 DOI: 10.1016/J.MEJO.2021.105121
E. Khokhryakov
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引用次数: 1
A 10-GHz Inductorless Modified Regulated Cascode Transimpedance Amplifier for Optical Fiber Communication 用于光纤通信的10ghz无电感调制级联码跨阻放大器
Microelectron. J. Pub Date : 2021-05-28 DOI: 10.1016/J.MEJO.2021.105123
Elmira Semsar Parapari, Z. D. Koozehkanani, S. Toofan
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引用次数: 4
Capacitance response of concave well substrate touch-mode capacitive pressure sensor: Mathematical analysis and simulation 凹孔基板触模电容式压力传感器的电容响应:数学分析与仿真
Microelectron. J. Pub Date : 2021-05-20 DOI: 10.1016/J.MEJO.2021.105118
Myongchol Kang, Chan Ri, Jong-Woo Choe
{"title":"Capacitance response of concave well substrate touch-mode capacitive pressure sensor: Mathematical analysis and simulation","authors":"Myongchol Kang, Chan Ri, Jong-Woo Choe","doi":"10.1016/J.MEJO.2021.105118","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105118","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"56 1","pages":"105118"},"PeriodicalIF":0.0,"publicationDate":"2021-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79217141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Dielectric surface roughness scattering induced crosstalk performance of coupled MCB interconnects 介电表面粗糙度散射诱导耦合MCB互连串扰性能
Microelectron. J. Pub Date : 2021-05-17 DOI: 10.1016/J.MEJO.2021.105084
Manvi Sharma, M. Rai, R. Khanna
{"title":"Dielectric surface roughness scattering induced crosstalk performance of coupled MCB interconnects","authors":"Manvi Sharma, M. Rai, R. Khanna","doi":"10.1016/J.MEJO.2021.105084","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105084","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"83 1","pages":"105084"},"PeriodicalIF":0.0,"publicationDate":"2021-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77135475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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