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Memristive circuits design under different personality traits based on second-order damping system 基于二阶阻尼系统的不同人格特征记忆电路设计
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/j.mejo.2021.105148
Junwei Sun, Xiao Xiao, Peng Liu, Yanfeng Wang
{"title":"Memristive circuits design under different personality traits based on second-order damping system","authors":"Junwei Sun, Xiao Xiao, Peng Liu, Yanfeng Wang","doi":"10.1016/j.mejo.2021.105148","DOIUrl":"https://doi.org/10.1016/j.mejo.2021.105148","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"88 1","pages":"105148"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85146342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and implementation of true random number generators based on semiconductor superlattice chaos 基于半导体超晶格混沌的真随机数发生器的设计与实现
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/J.MEJO.2021.105119
Han Wu, Zhizhen Yin, Jianguo Xie, P. Ding, Peihua Liu, Helun Song, Xiaoming Chen, Shu Xu, Wei Liu, Yaohui Zhang
{"title":"Design and implementation of true random number generators based on semiconductor superlattice chaos","authors":"Han Wu, Zhizhen Yin, Jianguo Xie, P. Ding, Peihua Liu, Helun Song, Xiaoming Chen, Shu Xu, Wei Liu, Yaohui Zhang","doi":"10.1016/J.MEJO.2021.105119","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105119","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"1 1","pages":"105119"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89277867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Design of node separated triple-node-upset self-recoverable latch 节点分离式三节点扰动自恢复锁存器的设计
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/J.MEJO.2021.105111
Zhengfeng Huang, Di Cao, Jianguo Cui, Yingchun Lu, Huaguo Liang, Yiming Ouyang, Tianming Ni, Zhenmin Li
{"title":"Design of node separated triple-node-upset self-recoverable latch","authors":"Zhengfeng Huang, Di Cao, Jianguo Cui, Yingchun Lu, Huaguo Liang, Yiming Ouyang, Tianming Ni, Zhenmin Li","doi":"10.1016/J.MEJO.2021.105111","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105111","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"150 1","pages":"105111"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76613037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
FinFET based SRAMs in Sub-10nm domain 亚10nm域基于FinFET的sram
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/J.MEJO.2021.105116
M. Mohammed, Athiya Nizam, Liaquat Ali, M. Chowdhury
{"title":"FinFET based SRAMs in Sub-10nm domain","authors":"M. Mohammed, Athiya Nizam, Liaquat Ali, M. Chowdhury","doi":"10.1016/J.MEJO.2021.105116","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105116","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"60 1","pages":"105116"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77893524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Design of 0-15 GHz flat-bandwidth programmable gain amplifier based on transconductance switching technique 基于跨导开关技术的0-15 GHz平带宽可编程增益放大器设计
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/J.MEJO.2021.105142
Kai Jing, Chu Ji, N. Yu
{"title":"Design of 0-15 GHz flat-bandwidth programmable gain amplifier based on transconductance switching technique","authors":"Kai Jing, Chu Ji, N. Yu","doi":"10.1016/J.MEJO.2021.105142","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105142","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"6 1","pages":"105142"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88232136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New electronically adjustable memelement emulator for realizing the behaviour of fully-floating meminductor and memristor 实现全浮动式记忆电感和忆阻器性能的新型电子可调记忆元件仿真器
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/J.MEJO.2021.105126
K. Bhardwaj, M. Srivastava
{"title":"New electronically adjustable memelement emulator for realizing the behaviour of fully-floating meminductor and memristor","authors":"K. Bhardwaj, M. Srivastava","doi":"10.1016/J.MEJO.2021.105126","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105126","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"57 1","pages":"105126"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80478126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Design options for high-speed OA-based fully differential buffers able to drive large loads 高速基于oa的全差分缓冲器的设计选项，能够驱动大负载
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/J.MEJO.2021.105115
M. Neag, István Kovács, R. Onet, I. Câmpanu
{"title":"Design options for high-speed OA-based fully differential buffers able to drive large loads","authors":"M. Neag, István Kovács, R. Onet, I. Câmpanu","doi":"10.1016/J.MEJO.2021.105115","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105115","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"26 1","pages":"105115"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83022616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A digital background calibration scheme for non-linearity of SAR ADC using back-propagation algorithm 基于反向传播算法的SAR ADC非线性数字背景校正方案
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/J.MEJO.2021.105113
Hao-Wei Lu, Xiao-peng Yu, Si-Qi Wang, Yuyan Liu, Zhenyan Huang, Zhenghao Lu, K. Yeo, Jer-Ming Chen
{"title":"A digital background calibration scheme for non-linearity of SAR ADC using back-propagation algorithm","authors":"Hao-Wei Lu, Xiao-peng Yu, Si-Qi Wang, Yuyan Liu, Zhenyan Huang, Zhenghao Lu, K. Yeo, Jer-Ming Chen","doi":"10.1016/J.MEJO.2021.105113","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105113","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"74 1","pages":"105113"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82963683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An embedded capacitive sensor for in-situ angular detection of micromotor 一种用于微电机角度原位检测的嵌入式电容式传感器
Microelectron. J. Pub Date : 2021-08-01 DOI: 10.1016/J.MEJO.2021.105088
Tianyu Yang, Xiaoshi Li, Xiang-Yu Sun, Yicheng Wang, Yu Chen, Dong-Dong Gong, Yijia Du
{"title":"An embedded capacitive sensor for in-situ angular detection of micromotor","authors":"Tianyu Yang, Xiaoshi Li, Xiang-Yu Sun, Yicheng Wang, Yu Chen, Dong-Dong Gong, Yijia Du","doi":"10.1016/J.MEJO.2021.105088","DOIUrl":"https://doi.org/10.1016/J.MEJO.2021.105088","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"66 1","pages":"105088"},"PeriodicalIF":0.0,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83790935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Si-based MEMS resonant sensor: A review from microfabrication perspective 硅基MEMS谐振传感器的微加工研究进展
Microelectron. J. Pub Date : 2021-06-17 DOI: 10.31224/osf.io/tvk7s
Gulshan Verma, K. Mondal, Ankur Gupta
{"title":"Si-based MEMS resonant sensor: A review from microfabrication perspective","authors":"Gulshan Verma, K. Mondal, Ankur Gupta","doi":"10.31224/osf.io/tvk7s","DOIUrl":"https://doi.org/10.31224/osf.io/tvk7s","url":null,"abstract":"With the technological advancement in micro-electro-mechanical systems (MEMS), microfabrication processes along with digital electronics together have opened novel avenues to the development of small-scale smart sensingdevices capable of improved sensitivity with a lower cost of fabrication and relatively small power consumption. This article aims to provide the overview of the recent work carried out on the fabrication methodologies adoptedto develop silicon based resonant sensors. A detailed discussion has been carried out to understand critical steps involved in the fabrication of the silicon-based MEMS resonator. Some challenges starting from the materialsselection to the ?final phase of obtaining a compact MEMS resonator device for its fabrication have also been explored critically.","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"116 1","pages":"105210"},"PeriodicalIF":0.0,"publicationDate":"2021-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87855764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
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