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A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement Si1-xGex源极/漏极NT JLFET基于物理的漏极电流模型，用于增强热载流子可靠性和温度测量
Microelectron. J. Pub Date : 2022-06-01 DOI: 10.1016/j.mejo.2022.105501
Anchal Thakur, R. Dhiman
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引用次数: 4
On the design of p-channel step-FinFET at sub-10nm node: A parametric analysis 亚10nm节点p沟道阶跃finfet的设计:参数分析
Microelectron. J. Pub Date : 2022-06-01 DOI: 10.1016/j.mejo.2022.105505
S. Padhi, V. Narendar, A. Nishad
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引用次数: 2
All-digital calibration algorithm based on channel multiplexing for TI-ADCs 基于信道复用的ti - adc全数字校准算法
Microelectron. J. Pub Date : 2022-06-01 DOI: 10.1016/j.mejo.2022.105503
XiMing Xie, Hongmei Chen, Yongsheng Yin, Jian Wang, Long Li, Honghui Deng, Xu Meng
{"title":"All-digital calibration algorithm based on channel multiplexing for TI-ADCs","authors":"XiMing Xie, Hongmei Chen, Yongsheng Yin, Jian Wang, Long Li, Honghui Deng, Xu Meng","doi":"10.1016/j.mejo.2022.105503","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105503","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"59 1","pages":"105503"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87654013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
MESO-LUT: A design approach of look up tables based on MESO devices MESO- lut:一种基于MESO器件的查表设计方法
Microelectron. J. Pub Date : 2022-06-01 DOI: 10.1016/j.mejo.2022.105493
Junwei Zeng, Nuo Xu, Cheng Li, Desheng Ma, Chenglong Huang, Wenqing Wang, Yihong Hu, L. Fang
{"title":"MESO-LUT: A design approach of look up tables based on MESO devices","authors":"Junwei Zeng, Nuo Xu, Cheng Li, Desheng Ma, Chenglong Huang, Wenqing Wang, Yihong Hu, L. Fang","doi":"10.1016/j.mejo.2022.105493","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105493","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"6 1","pages":"105493"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78644369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications 一个128 Kb无dac的6T SRAM内存计算宏，具有优先级子置换ADC，用于人工智能边缘应用
Microelectron. J. Pub Date : 2022-01-01 DOI: 10.1016/j.mejo.2022.105506
Kanglin Xiao, Xiaoxin Cui, Xin Qiao, Xin'an Wang, Yuan Wang
{"title":"A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications","authors":"Kanglin Xiao, Xiaoxin Cui, Xin Qiao, Xin'an Wang, Yuan Wang","doi":"10.1016/j.mejo.2022.105506","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105506","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"24 1","pages":"105506"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80937913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An ultra-low-power highly integrated novel one-cell battery management chip for wearables 一种用于可穿戴设备的超低功耗高集成新型单电池管理芯片
Microelectron. J. Pub Date : 2022-01-01 DOI: 10.1016/j.mejo.2022.105640
Kainan Wu, Hong-Yi Wang, Chen Chen, Tao Tao
{"title":"An ultra-low-power highly integrated novel one-cell battery management chip for wearables","authors":"Kainan Wu, Hong-Yi Wang, Chen Chen, Tao Tao","doi":"10.1016/j.mejo.2022.105640","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105640","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"85 1","pages":"105640"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78213216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-latency area-efficient systolic bit-parallel GF(2m) multiplier for a narrow class of trinomials 低延迟面积效率收缩期位并行GF(2m)乘法器用于窄类三项式
Microelectron. J. Pub Date : 2021-11-01 DOI: 10.1016/j.mejo.2021.105275
Siva Ramakrishna Pillutla, Lakshmi Boppana
{"title":"Low-latency area-efficient systolic bit-parallel GF(2m) multiplier for a narrow class of trinomials","authors":"Siva Ramakrishna Pillutla, Lakshmi Boppana","doi":"10.1016/j.mejo.2021.105275","DOIUrl":"https://doi.org/10.1016/j.mejo.2021.105275","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"16 1","pages":"105275"},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86179311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 5 MHz-BW 71.7-dB SNDR two-step hybrid-domain ADC in 65-nm CMOS 5mhz - bw 71.7 db SNDR两步混合域ADC, 65nm CMOS
Microelectron. J. Pub Date : 2021-11-01 DOI: 10.1016/j.mejo.2021.105253
Zhe Yu, Yuhua Liang, Shubin Liu
{"title":"A 5 MHz-BW 71.7-dB SNDR two-step hybrid-domain ADC in 65-nm CMOS","authors":"Zhe Yu, Yuhua Liang, Shubin Liu","doi":"10.1016/j.mejo.2021.105253","DOIUrl":"https://doi.org/10.1016/j.mejo.2021.105253","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"45 1","pages":"105253"},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84555732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Mechanical strain and bias-stress compensated, 6T-1C pixel circuit for flexible AMOLED displays 柔性AMOLED显示器的机械应变和偏应力补偿，6T-1C像素电路
Microelectron. J. Pub Date : 2021-11-01 DOI: 10.1016/j.mejo.2021.105266
Akriti Srivastava, Divya Dubey, M. Goswami, Kavindra Kandpal
{"title":"Mechanical strain and bias-stress compensated, 6T-1C pixel circuit for flexible AMOLED displays","authors":"Akriti Srivastava, Divya Dubey, M. Goswami, Kavindra Kandpal","doi":"10.1016/j.mejo.2021.105266","DOIUrl":"https://doi.org/10.1016/j.mejo.2021.105266","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"117 1","pages":"105266"},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79851687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices 垂直堆叠双纳米片nMOS器件零温度系数行为分析
Microelectron. J. Pub Date : 2021-11-01 DOI: 10.1016/j.mejo.2021.105277
Carlos H. S. Coelho, J. Martino, M. Bellodi, E. Simoen, A. Veloso, P. Agopian
{"title":"Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices","authors":"Carlos H. S. Coelho, J. Martino, M. Bellodi, E. Simoen, A. Veloso, P. Agopian","doi":"10.1016/j.mejo.2021.105277","DOIUrl":"https://doi.org/10.1016/j.mejo.2021.105277","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"3 1","pages":"105277"},"PeriodicalIF":0.0,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74825196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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