Carlos H. S. Coelho, J. Martino, M. Bellodi, E. Simoen, A. Veloso, P. Agopian
{"title":"垂直堆叠双纳米片nMOS器件零温度系数行为分析","authors":"Carlos H. S. Coelho, J. Martino, M. Bellodi, E. Simoen, A. Veloso, P. Agopian","doi":"10.1016/j.mejo.2021.105277","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"3 1","pages":"105277"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices\",\"authors\":\"Carlos H. S. Coelho, J. Martino, M. Bellodi, E. Simoen, A. Veloso, P. Agopian\",\"doi\":\"10.1016/j.mejo.2021.105277\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":18617,\"journal\":{\"name\":\"Microelectron. J.\",\"volume\":\"3 1\",\"pages\":\"105277\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectron. J.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1016/j.mejo.2021.105277\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectron. J.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/j.mejo.2021.105277","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}