{"title":"Microelectromechanical (MEM) switch and inverter for digital IC applications","authors":"W. Jang, O. Kwon, J. Lee, Jun‐Bo Yoon","doi":"10.1109/ASSCC.2007.4425779","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425779","url":null,"abstract":"Microelectromechanical (MEM) switch and MEM switch-based inverter was proposed and fabricated using a CMOS-compatible poly-Si surface micromachining process. The key concept is developed that the MEM switch-based inverter with the same implementation as CMOS inverter has a high noise immunity and low power dissipation because the MEM switch can clearly eliminate the leakage current when the device is off. The fabricated MEM switch showed ideal on/off characteristics with a sub-threshold swing of 4 m V/decade, an essentially zero off current, and a very high on/off current ratio over 10 s and also the MEM switch-based inverter showed ideal voltage transfer characteristics.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128425203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Eo, H. Yu, S. Song, Younghwoon Ko, Jae Young Kim
{"title":"A fully integrated 2.4GHz low IF CMOS transceiver for 802.15.4 ZigBee applications","authors":"Y. Eo, H. Yu, S. Song, Younghwoon Ko, Jae Young Kim","doi":"10.1109/ASSCC.2007.4425756","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425756","url":null,"abstract":"A fully integrated 2.4 GHz RF transceiver compliant with the low-power ZigBee (IEEE 802.15.4) standard is presented. The RF transceiver adopts low IF receiver and direct up-conversion transmitter. It consumes 18 mA in receive mode and 17 mA in transmit mode with 1.8-V power supply. The receiver chain IIP3 is -13.S dBm and BBA poly phase filter can reject the ACI/AACI interferers. The achieved transmitter's maximum power is 4.7 dBm and its EVM is 8.4% at 0.5 dBm output. The LO generation is achieved using frequency mixing method and thus it can prevent the VCO pulling. The die area is 2.5 mm times 2.6 mm.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132677528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 1V 10b 60MS/s Hybrid Opamp-Reset/Switched-RC pipelined ADC","authors":"J. Carnes, Gil-Cho Ahn, Un-Ku Moon","doi":"10.1109/ASSCC.2007.4425774","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425774","url":null,"abstract":"The fully differential Opamp Reset Switching Technique (ORST) for low voltage applications is presented. The technique is demonstrated in a 1V, 10-bit, 60MS/s pipelined ADC where a hybrid ORST/Switched-RC topology is adopted for improved accuracy at low voltage supplies and achieves 50dB SNDR in 0.18µm CMOS while dissipating 34mW. The architecture also uses a passive input track-and-reset to save power and has an input bandwidth greater than 90MHz.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"45 14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115406667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chi-Hsueh Wang, Chung-Chun Chen, Ming-Fong Lei, Mei-Chen Chuang, Huei Wang
{"title":"A 66–72 GHz divide-by-3 injection-locked frequency divider in 0.13-μm CMOS technology","authors":"Chi-Hsueh Wang, Chung-Chun Chen, Ming-Fong Lei, Mei-Chen Chuang, Huei Wang","doi":"10.1109/ASSCC.2007.4425701","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425701","url":null,"abstract":"This paper demonstrates a CMOS injection-locked frequency divider (ILFD) operating at 66 GHz with low dc power. The divide-by-3 ILFD is realized using 0.13-mum CMOS technology with an injection locking range of 1.5 GHz at high core current mode and a locking range of 6.3 GHz at low core current mode. To the authors' knowledge, the ILFD is the highest frequency demonstration, the widest locking range and the lowest dc power consumption of a divide-by-3 injection-locked frequency divider reported to date.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115666099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shiho Kim, Junghyun Cho, Hyun-Sik Kim, Haksoo Kim, Hee-Bok Kang, Suk-Kyung Hong
{"title":"An EPC Gen 2 compatible passive/semi-active UHF RFID transponder with embedded FeRAM and temperature sensor","authors":"Shiho Kim, Junghyun Cho, Hyun-Sik Kim, Haksoo Kim, Hee-Bok Kang, Suk-Kyung Hong","doi":"10.1109/ASSCC.2007.4425750","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425750","url":null,"abstract":"A fully integrated passive and battery powered semi-active UHF RFID transponder chip supporting EPC Gen 2 protocol is presented. The proposed transponder works as a passive RFID tag when the generated RF-power is sufficient to operate, otherwise it operates in semi-active mode using battery power. The chip has re-writeable non-volatile memory bank formed by FeRAM and on-chip temperature sensor. The memory consists of EPC memory bank for EPC functionality and temperature bank for storing sensed data. The standby current in semi-active is about 0.5 muA, the lifetime in semi-active mode is in excess of 2 year with a 10 mA-hr thin film battery.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116105050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 28.5mW 2.8GFLOPS floating-point multifunction unit for handheld 3D graphics processors","authors":"Byeong-Gyu Nam, H. Yoo","doi":"10.1109/ASSCC.2007.4425709","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425709","url":null,"abstract":"A low-power, high-performance 4-way 32-bit floating-point multifunction unit is developed for handheld 3D graphics processors. It uses logarithmic arithmetic to unify matrix, vector, and elementary functions into a single arithmetic unit. The optimal designs of logarithmic and antilogarithmic converters are presented. An adaptive number conversion scheme is proposed and it reduces total area by 15%. With this scheme, the matrix-vector multiplication (MAT), cross-product, lerp, and logarithm (logx y with 2 variables) are newly unified with the other operations. The unit achieves 2-cycle throughput for the MAT and single-cycle throughput for all other operations. It takes 451 K transistors and achieves 2.8 GFLOPS at 200 MHz with 28.5 mW power consumption.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116209950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low hardware complexity key equation solver chip for Reed-Solomon decoders","authors":"J. Baek, M. Sunwoo","doi":"10.1109/ASSCC.2007.4425680","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425680","url":null,"abstract":"This paper proposes a new simplified degree computationless modified Euclid's algorithm (S-DCME) and its architecture for Reed-Solomon decoders. The proposed S-DCME algorithm reformulates the existing modified Euclid's (ME) algorithm and uses new initial conditions to remove unnecessary hardware components and to use simple data paths. Thus, it requires two less multipliers and t + 2 less multiplexers compared with the reformulated inversionless Berlekamp-Massey (RiBM) algorithm which has shown the best performance so far. The critical path delay of S-DCME is 7.92 ns, i.e., TMul + TADD + TMUX, that is equal to that of RiBM. The gate count of the implemented chip using the MagnaChip HSI 0.25 mum standard cell library is 17,800.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124680519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An 18-mW two-stage CMOS transimpedance amplifier for 10 Gb/s optical application","authors":"Chao Wang, Chao-Shiun Wang, Chorng-Kuang Wang","doi":"10.1109/ASSCC.2007.4425718","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425718","url":null,"abstract":"This paper presents a low power and wideband transimpedancc amplifier (TIA) design for 10 Gb/s optical receiver. Using a 0.18-mum CMOS technology, this TIA adopts a two-stage topology with inductive shunt-peaking and series-peaking techniques to optimize the power consumption and bandwidth performance. The measured -3-dB bandwidth is 8.6 GHz in the presence of a 0.15-pF photodiode capacitance. The transimpedance gain is 59 dB Omega with only 18 mW power consumption from a 1.8-V supply. The measured input referred noise current is less than 25 pA / V Hz up to 9 GHz.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128828580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 0.8-V CMOS quadrature LC VCO using capacitive coupling","authors":"Chan Tat Fu, H. Luong","doi":"10.1109/ASSCC.2007.4425724","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425724","url":null,"abstract":"A new concept for quadrature coupling of LC oscillators is introduced and demonstrated in a 4.5-GHz CMOS quadrature voltage-controlled oscillator (QVCO). By employing cupacitivc coupling of second harmonic components, quadrature outputs can be obtained at a low supply voltage without extra power consumption. Fabricated in a 0.13 mum CMOS process and operated at 0.8-V supply, the proposed QVCO measures phase noise of-112dBc/Hz at 1M offset from -1.91GHz while drawing a total current of 4mA, which corresponds to a FOM of 181 dB. The core area is 0.278mm2.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117159758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 1V 1.7mW 25GHz transformer-feedback divide-by-3 frequency divider with quadrature outputs","authors":"Sujiang Rong, H. Luong","doi":"10.1109/ASSCC.2007.4425697","DOIUrl":"https://doi.org/10.1109/ASSCC.2007.4425697","url":null,"abstract":"A transformer-feedback injection-locked divide-by-3 frequency divider (ILFD) is proposed. Employing a transformer feedback, the divider can achieve high performance in terms of low voltage, high frequency, and low power consumption. Fabricated in a 0.13-mum CMOS process and operated at a 1-V supply voltage, the divider prototype measures an input frequency range from 22.7 GHz to 25.1 GHz with 2nd and 3rd harmonic tones of -45 dBc and -40 dBc respectively. With quadrature outputs, the divider achieves a sideband rejection ratio of 40 dB while consuming 1.7 mW and occupying an active area of 0.23 mm2.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134125562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}