{"title":"An 18-mW two-stage CMOS transimpedance amplifier for 10 Gb/s optical application","authors":"Chao Wang, Chao-Shiun Wang, Chorng-Kuang Wang","doi":"10.1109/ASSCC.2007.4425718","DOIUrl":null,"url":null,"abstract":"This paper presents a low power and wideband transimpedancc amplifier (TIA) design for 10 Gb/s optical receiver. Using a 0.18-mum CMOS technology, this TIA adopts a two-stage topology with inductive shunt-peaking and series-peaking techniques to optimize the power consumption and bandwidth performance. The measured -3-dB bandwidth is 8.6 GHz in the presence of a 0.15-pF photodiode capacitance. The transimpedance gain is 59 dB Omega with only 18 mW power consumption from a 1.8-V supply. The measured input referred noise current is less than 25 pA / V Hz up to 9 GHz.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2007.4425718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41
Abstract
This paper presents a low power and wideband transimpedancc amplifier (TIA) design for 10 Gb/s optical receiver. Using a 0.18-mum CMOS technology, this TIA adopts a two-stage topology with inductive shunt-peaking and series-peaking techniques to optimize the power consumption and bandwidth performance. The measured -3-dB bandwidth is 8.6 GHz in the presence of a 0.15-pF photodiode capacitance. The transimpedance gain is 59 dB Omega with only 18 mW power consumption from a 1.8-V supply. The measured input referred noise current is less than 25 pA / V Hz up to 9 GHz.
提出了一种用于10gb /s光接收机的低功耗宽带跨阻放大器的设计方案。该TIA采用0.18 μ m CMOS技术,采用两级拓扑结构,采用电感并联峰值和串联峰值技术,以优化功耗和带宽性能。在0.15-pF光电二极管电容存在的情况下,测量到的-3-dB带宽为8.6 GHz。跨阻增益为59 dB ω, 1.8 v电源功耗仅为18 mW。测量输入参考噪声电流小于25 pA / V Hz,最高可达9 GHz。