Shiho Kim, Junghyun Cho, Hyun-Sik Kim, Haksoo Kim, Hee-Bok Kang, Suk-Kyung Hong
{"title":"An EPC Gen 2 compatible passive/semi-active UHF RFID transponder with embedded FeRAM and temperature sensor","authors":"Shiho Kim, Junghyun Cho, Hyun-Sik Kim, Haksoo Kim, Hee-Bok Kang, Suk-Kyung Hong","doi":"10.1109/ASSCC.2007.4425750","DOIUrl":null,"url":null,"abstract":"A fully integrated passive and battery powered semi-active UHF RFID transponder chip supporting EPC Gen 2 protocol is presented. The proposed transponder works as a passive RFID tag when the generated RF-power is sufficient to operate, otherwise it operates in semi-active mode using battery power. The chip has re-writeable non-volatile memory bank formed by FeRAM and on-chip temperature sensor. The memory consists of EPC memory bank for EPC functionality and temperature bank for storing sensed data. The standby current in semi-active is about 0.5 muA, the lifetime in semi-active mode is in excess of 2 year with a 10 mA-hr thin film battery.","PeriodicalId":186095,"journal":{"name":"2007 IEEE Asian Solid-State Circuits Conference","volume":"285 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"45","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2007.4425750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 45
Abstract
A fully integrated passive and battery powered semi-active UHF RFID transponder chip supporting EPC Gen 2 protocol is presented. The proposed transponder works as a passive RFID tag when the generated RF-power is sufficient to operate, otherwise it operates in semi-active mode using battery power. The chip has re-writeable non-volatile memory bank formed by FeRAM and on-chip temperature sensor. The memory consists of EPC memory bank for EPC functionality and temperature bank for storing sensed data. The standby current in semi-active is about 0.5 muA, the lifetime in semi-active mode is in excess of 2 year with a 10 mA-hr thin film battery.