{"title":"Verification of an improved BSIM3v3 MOSFET model","authors":"B. Toner, V. Fusco, M. Alam, G. A. Armstrong","doi":"10.1109/HFPSC.2000.874089","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874089","url":null,"abstract":"In this paper the BSIM3v3 MOSFET model has been adapted for use at S-band frequencies. Three components have been added to the model to account for extrinsic physical effects. Justification for these components is given and full verification of the model has been completed through DC, S-parameter, power and noise measurement. Excellent agreement has been found between measured and simulated results, with the resulting model providing a good representation of a 0.25 /spl mu/m CMOS device in the linear region of operation.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114901179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal parameter extraction technique using DC I-V data for HBT transistors","authors":"D. Williams, P. Tasker","doi":"10.1109/HFPSC.2000.874085","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874085","url":null,"abstract":"The power dissipated by a Heterojunction Bipolar Transistor (HBT) due to the self-heating effects can be observed from the current collapse seen in the DC I-V characteristics. Using this characteristic, we propose an extraction technique to directly extract the thermal resistance and the barrier height of the base emitter diode at ambient temperature. The technique is based on calculating the power dissipated, at different bias conditions, then relating this to the variation in the temperature dependent variable V/sub BE/. The technique has been validated mathematically and experimentally using traditional extraction techniques, where parameters are extracted over temperature.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124340279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A monolithic SiGe 5 GHz low noise amplifier and tuneable image-reject filter for wireless LAN applications","authors":"B. Foley, P. Murphy, A. Murphy","doi":"10.1109/HFPSC.2000.874077","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874077","url":null,"abstract":"This paper presents a monolithic RFIC consisting of a low noise amplifier (LNA) and tuneable image-reject filter (IRF), for wireless local area network applications at 5 GHz. The LNA uses a cascode topology with on-chip matching to provide a simultaneous noise and power match The tuneable third-order filter alters the transfer characteristic of this LNA to achieve filtering of the image signal. The filter is varactor tuned using an external voltage source. The LNA and IRF are designed for operation between 5.15-5.35 GHz, targeted at the lower two bands of the recently allocated unlicensed national information infrastructure (U-NII) frequency bands. The circuit reported here makes use of Motorola's silicon-germanium process technologies.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134321213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Retrodirective array radar cross-section performance comparisons","authors":"B. Toh, V. Fusco","doi":"10.1109/HFPSC.2000.874084","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874084","url":null,"abstract":"This paper reports on the comparison of the radar cross-section (RCS) of a 4-element retrodirective array (RDA) calculated from its measured gain with the predicted RCS of a flat plate, and a 90/spl deg/ dihedral corner reflector. The comparison showed that the boresight RCS of the 4-element RDA is 2.33 dB higher than the boresight RCS of the 90/spl deg/ dihedral passive corner reflector, but 3.66 dB lower than the flat plate at broadside Incidence of the same sizes. In this paper, the different scattering field effects that cause the RCS of the 4-element RDA to be lower that the RCS of the flat plate at angles less than /spl plusmn/10/spl deg/ was explained. In addition, the paper shows for the first time that retrodirective arrays can be made to have better or worse RCS performance than passive reflectors depending on the gain of the antenna elements and the performance of the conjugate circuit.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123278432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"CPW MMIC power amplifier design for flip-chip packaged power amplifiers","authors":"A. Wong, K. McAdoo, D. Linton","doi":"10.1109/HFPSC.2000.874078","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874078","url":null,"abstract":"There has been considerable interest in and development of MMIC power amplifiers for sub-miniature packaging using flip chip technology combined with CPW layout technologies. A new approach is developed to synthesis both the input/output power combining and impedance matching in a coplanar waveguide (CPW) MMIC power amplifier at 14 GHz. We then compare at selected band frequencies the output power gain and stability with those measured for a fabricated MMIC device of well known properties in order to validate the problem presented. Performance characteristics of this MMIC amplifier are compared with those of an identical simulated structure having an air bridged CPW realization.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115171888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A broadband antenna for PCN/UMTS applications","authors":"P. H. Rao, V. Fusco, R. Cahill","doi":"10.1109/HFPSC.2000.874073","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874073","url":null,"abstract":"A printed wide slot antenna fed by a novel feeding mechanism consisting of a printed bow tie feed placed within the slot aperture and metal baffles between the slot ground plane and a grounded back plane allow this antenna to operate over more than an octave bandwidth with a VSWR<2. Special features of the slot antenna design are its small slot ground plane (1/spl lambda//sub 0/ /spl times/1/spl lambda//sub 0/) and small back ground plane (2/spl lambda//sub 0//spl times/2/spl lambda//sub 0/). The cross polarisation level of the antenna lies between -22 dB and -36 dB, over the frequency range and the average gain of the antenna is 4.5 dBi.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121906947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimized design of spiral inductors for Si RF IC's","authors":"X. Xiong, V. Fusco, B. Toner","doi":"10.1109/HFPSC.2000.874082","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874082","url":null,"abstract":"Inductors are important elements of microwave circuits which frequently require high quality factors, small size and large inductance. Optimization design would be very useful for circuit simulation of RF circuits with on silicon chip spiral inductors. In this paper a method for the optimized design of silicon integrated circuit spiral inductors is discussed. In the method, a relatively complete circuit model is developed, the method used to create the model is in good agreement with experiment and 3D EM field simulation.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117014696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Antipodal finline-to-microstrip transition for operation in the Ka band","authors":"Arne Øistein Olsen, P. Steenson, Stavros Iezekiel","doi":"10.1109/HFPSC.2000.874074","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874074","url":null,"abstract":"An antipodal finline to microstrip transition for operation in the Ka Band (26.5-40 GHz) has been designed and characterised. Back to back transitions fabricated on soft substrates have been measured and simulated to verify their behaviour. Various configurations are implemented and a practical method to improve the design is used.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121468349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Active bias configuration for UMTS multi-carrier power amplifier","authors":"A. Zhu, P. Perry","doi":"10.1109/HFPSC.2000.874086","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874086","url":null,"abstract":"This paper describes a novel, low cost active bias control configuration for a multi-carrier UMTS power amplifier. It consists simply of a detector and a gain-controlled op-amp, which tracks the envelope of an RF input signal to modulate the bias supply current to a standard monolithic amplifier. Simulation results indicate that power efficiency is improved and IMD level is reduced.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131083212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Preliminary investigations into SU-8 as a material for integrated all-optical microwave filters","authors":"P. Curtis, S. Iezekiel, R. Miles, C. R. Pescod","doi":"10.1109/HFPSC.2000.874093","DOIUrl":"https://doi.org/10.1109/HFPSC.2000.874093","url":null,"abstract":"The optical characteristics of the ultrathick negative photoresist SU-8 have been investigated for use in integrated all-optical microwave filters. SU-8 has excellent micromachining properties and optical waveguides can be produced using fast, low cost photolithographical techniques with processing temperatures of less than 100/spl deg/C. This makes it a suitable material for rapid prototyping of integrated optical circuits. Multimode waveguides were fabricated and were found to have a loss of 6 dB/cm at 850 nm.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124771936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}