{"title":"改进的BSIM3v3 MOSFET模型的验证","authors":"B. Toner, V. Fusco, M. Alam, G. A. Armstrong","doi":"10.1109/HFPSC.2000.874089","DOIUrl":null,"url":null,"abstract":"In this paper the BSIM3v3 MOSFET model has been adapted for use at S-band frequencies. Three components have been added to the model to account for extrinsic physical effects. Justification for these components is given and full verification of the model has been completed through DC, S-parameter, power and noise measurement. Excellent agreement has been found between measured and simulated results, with the resulting model providing a good representation of a 0.25 /spl mu/m CMOS device in the linear region of operation.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Verification of an improved BSIM3v3 MOSFET model\",\"authors\":\"B. Toner, V. Fusco, M. Alam, G. A. Armstrong\",\"doi\":\"10.1109/HFPSC.2000.874089\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the BSIM3v3 MOSFET model has been adapted for use at S-band frequencies. Three components have been added to the model to account for extrinsic physical effects. Justification for these components is given and full verification of the model has been completed through DC, S-parameter, power and noise measurement. Excellent agreement has been found between measured and simulated results, with the resulting model providing a good representation of a 0.25 /spl mu/m CMOS device in the linear region of operation.\",\"PeriodicalId\":185234,\"journal\":{\"name\":\"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HFPSC.2000.874089\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HFPSC.2000.874089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
在本文中，BSIM3v3 MOSFET模型适用于s波段频率。模型中加入了三个组成部分来解释外在的物理效应。给出了这些元件的合理性，并通过直流、s参数、功率和噪声测量完成了模型的充分验证。测量结果与模拟结果非常吻合，所得到的模型很好地代表了0.25 /spl μ m CMOS器件在线性工作区域的情况。
In this paper the BSIM3v3 MOSFET model has been adapted for use at S-band frequencies. Three components have been added to the model to account for extrinsic physical effects. Justification for these components is given and full verification of the model has been completed through DC, S-parameter, power and noise measurement. Excellent agreement has been found between measured and simulated results, with the resulting model providing a good representation of a 0.25 /spl mu/m CMOS device in the linear region of operation.
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