Verification of an improved BSIM3v3 MOSFET model

Abstract

In this paper the BSIM3v3 MOSFET model has been adapted for use at S-band frequencies. Three components have been added to the model to account for extrinsic physical effects. Justification for these components is given and full verification of the model has been completed through DC, S-parameter, power and noise measurement. Excellent agreement has been found between measured and simulated results, with the resulting model providing a good representation of a 0.25 /spl mu/m CMOS device in the linear region of operation.