2021 22nd International Conference on Electronic Packaging Technology (ICEPT)最新文献

{"title":"Heat transfer analysis of phase change materials with metal foams","authors":"Yan Zhang, Huihui Wang, Pei Lu, Jing-yu Fan, Qixuan Tu, Johan Liu","doi":"10.1109/ICEPT52650.2021.9567957","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9567957","url":null,"abstract":"With the development of electronic products towards high-density integration, high performance and multifunction, the working frequencies and power consumption rate of electronic components and devices increase substantially. The resulting temperature rise has a great impact on the operation and lifetime of electronic products. Transient temperature control and efficient heat dissipation are essential to the stability and reliability of the electronic components and products. Paraffin wax, as one of the most commonly used phase change materials, has been widely applied in many products requiring transient temperature control due to its melting temperature lying in the range of electronics operation conditions. However, the applicable scopes of phase change materials were limited due to their shortcomings of low thermal conductivity and heat dissipation. In the present paper, both metal forms and carbon nanomaterials are used as thermal enhancers to increase the conduction of paraffin wax, and the heat transfer characters of the composites are investigated by numerical method. The simulation results show that the introduction of Cu or Ni foam as heat conductive enhancers can significantly increase the effective thermal conductivity of paraffin wax composite. The thermal conductivity of the composite with Ni foams is 3.684 times higher than that of the paraffin wax, and the increase is 12.485 times when Cu foam is used instead of Ni foam. Furthermore, the heat transfer of the composites can be strengthened by adding carbon nanomaterials into the paraffin wax so as to increase the thermal conductivity of the matrix. The simulation results show that the impact of dispersed carbon nanomaterials on thermal enhancement of the composites is less significant than that of metal foams.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115711093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A X Band Ceramic Package with Kilowatt-level High-power and Low Loss","authors":"Yangfan Zhou, Lin-jie Liu, Zhizhuang Qiao, Kems-Gwor Wang, Gaiwen Liu","doi":"10.1109/ICEPT52650.2021.9568160","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9568160","url":null,"abstract":"With the increase of the power density of microwave power devices, the ceramic packages of microwave power devices are required a high frequency, low loss and high heat dissipation. A X band ceramic package with kilowatt-level high-power and low-loss is designed based on diamond/Cu composites which is a very important heat dissipation material in high-power microwave devices. In order to avoid the air breakdown of arc phenomenon and improve the current carrying capacity of ceramic insulator, the insulator of ceramic package for kilowatt-level microwave high-power device has changed the conventional side metallization structure and adopted the side special-shaped metallization structure. In addition, the RF transmission structure of the package has a low loss by optimizing with HFSS software and is manufactured by multilayer high-temperature co-fired ceramic (HTCC) process. The measured results exhibit the return loss value better than 14 dB and the insertion loss value better than 0.25 dB over a wide frequency range from DC up to 12 GHz.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116804305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of factors affecting the outgassing rate of MEMS vacuum packaging materials","authors":"Yong Yang, Bin Zhou, X. Dai, Yun Huang","doi":"10.1109/ICEPT52650.2021.9568229","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9568229","url":null,"abstract":"The finite element Comsol Multiphysics software was used to analyze the thermal desorption on the surface of the material in vacuum packaging, and the destruction of the vacuum. In this study, three influencing factors, the concentration of initial adsorbed molecules on the surface, temperature and surface roughness, are selected to study the vacuum degradation in vacuum packaging. The orthogonal test analysis of three levels and three factors shows that the initial value of the surface adsorption of the packaging material, temperature, and surface roughness affect the outgassing performance of the package as follows: the value of the initial adsorption> surface roughness> temperature.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116952253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Study on the Effects of Fe and Ni Additions on the Electromigration Properties of Sn58Bi Solder Joints","authors":"Zhuangzhuang Hou, Yaru Dong, Lingyao Sun, Y. Liu, Yongiun Huo, Yingxia Liu, Xiuchen Zhao","doi":"10.1109/ICEPT52650.2021.9567997","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9567997","url":null,"abstract":"Sn58Bi eutectic solder is the preferred material for low temperature solder in multistage packaging. However, the brittleness and reliability problems of Sn58Bi eutectic solder, especially the phase separation of electromigration, bring great challenges to its application for multi-stage package interconnection. The modification of Sn58Bi eutectic solder by alloying has many significant technical advantages, such as effective control of interfacial wetting, intermetallic compounds phase transformation, growth kinetics, and improvement of resistance to electromigration. In this paper, Sn58Bi, Sn58Bi-lFe/lNi solder were prepared by melting method and fabricated to the solder joint for electromigration test. The electromigration test of solder joint were carried out with 0.5×104A/cm2 current density at 50°C, and the influence of Fe, Ni alloy elements addition on interfacial IMC growth and microstructure evolution of solder joint interface were studied. The results show that Fe and Ni alloy elements react with Sn to form FeSn2 and Ni3Sn4 IMC, respectively. FeSn2 are triangle or square, and distributed near the interface and embedded in bismuth rich phase and tin rich phase after electromigration test. Compared these two kinds solder joints, it can be seen that the Fe alloy elements can promote the growth of interface IMC and the aggregation of bismuth rich phase, while the Ni alloy elements can greatly inhibit the growth of interface IMC and the aggregation of bismuth rich phase. It may be due to the existence of FeSn2 near the interface, which changes the growth behavior of bismuth rich phase and bin rich phase near the interface of Sn58Bi-1Fe/Cu solder joints and promotes their growth. As for the inhibition of Ni alloy elements on the growth of interfacial IMC and bismuth rich phase in the anode under the condition of EM, the reason is that Ni3Sn4 forms a barrier in the solder matrix, which hinders the diffusion of atoms.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127152517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation of Electromagnetic Wave Propagation in 3D Integrated Module Based on 3D ADI-FDTD Algorithm","authors":"Yinhui Han, M. Miao, Jin Li","doi":"10.1109/ICEPT52650.2021.9567963","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9567963","url":null,"abstract":"In order to solve the problem of electromagnetic propagation in three-dimensional (3-D) heterogenous integrated modules. This paper presents an alternating direction implicit finite-difference time-domain (ADI-FDTD) method. This method can be well applied to 3-D electromagnetic problems. The excitation source suitable for this method is given in this paper. In order to effectively analyze electromagnetic problems at infinity, the ADI-FDTD algorithm combines the uniaxial PML(UPML) and the Mur first order absorbing boundary condition; the former is used for wave propagation in direction z, and the latter used for other boundaries. Finally, a demo is given to compare the results calculated by ADI-FDTD with that calculated by conventional FDTD algorithm. Numerical results show that the ADI-FDTD is not constrained by conditional stability, the calculation time can be greatly shortened and the calculation efficiency of FDTD is increased. The introduction of absorption boundary condition makes the numerical simulation more accurate and the calculation more efficient.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123421904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical analysis of the microscopic factors influencing the thermal conductivity of Al2O3/ AIN polymer composites","authors":"Nan Cheng, Xiaoxin Lu, Jiabin Huang, Jibao Lu, Shen Xu, Sun Rong, Jianbin Xu, C. Wong","doi":"10.1109/ICEPT52650.2021.9568154","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9568154","url":null,"abstract":"The thermal interface materials (TIMs) used between a chip and a heat spreader in electronic packaging composes polymeric materials filled with particulate fillers. In this work, we focus on the numerical modeling and design of the particle-laden polymers with high packing density, in which two kinds of particles are mixed. Specifically, $mathbf{mathrm{A}1_{2}mathrm{O}_{3}}$ and AIN, which are commonly used in the electronic packaging industry, are taken as the particulate fillers. Firstly, a series of microstructures of Al2O3/ AIN filled polymer composites with 75 vol% filler volume fraction are generated in GeoDict software with changing the relative content of Al2O3 and AIN. The diameters of the Al2O3 and AIN particles obey orthogonal logarithmic distribution and Gaussian distribution, respectively. Then the thermal conductivities of the structures are simulated under various microscopic factors, such as particle-particle and particle-matrix interfacial thermal resistance, etc. The results are analyzed taken advantage of the orthogonal experimental design, showing that the particle-particle interfacial thermal resistance plays dominant role in the thermal properties of the particulate composites. We demonstrate that such technique can be used to optimize the design of particulate TIMs.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125508666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Warpage measurement of substrates and printed circuit boards with Shadow Moiré","authors":"Xingjia Huang, Changping Ou, Shengcong Zhu, Yixiu Huang","doi":"10.1109/ICEPT52650.2021.9568081","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9568081","url":null,"abstract":"Warpage of ball grid array substrate and printed circuit board is a common issue during reflow process due to the mismatch of coefficients of thermal expansion. With the development of the substrate becoming larger and larger, there is a higher risk of reflow defects caused by warpage. In this paper, an open soldering failure, head-in-pillow, caused by warpage is reported when ball grid array package was reflowed onto printed circuit board. Shadow moiré technique was then used for dynamic warpage analysis on both sides of ball grid array substrate and printed circuit board. The dynamic warpage measurement results indicate that Al corner is the highest risk location for head-in-pillow failure, which matches that of actual head-in-pillow defect location very well. Design of experiment on reflow profile and stencil aperture design were conducted. Based on design of experiment results and considering the reflow process control window, medium temperature profile (U1 peak temperature of 240°C) with aperture design of the stencil 2 was chosen for manufacturing.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125554965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A thermal network model for thermal analysis in automotive IGBT modules","authors":"Yanzhong Tian, Tong An, F. Qin, Yanpeng Gong, Chen Liang","doi":"10.1109/ICEPT52650.2021.9568128","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9568128","url":null,"abstract":"With the developing of insulated gate bipolar transistor (IGBT), a method to accurately solve the detailed problems caused by thermal behaviors in different locations and layers of automotive IGBT modules is necessary. The paper proposes an RC thermal network for automotive IGBT modules. The thermal effects are modeled among chips and key layers. And particularly boundary conditions are considered, including the heat dissipation conditions. It is demonstrated that the model makes it possible to estimate temperature quickly and accurately of automotive IGBT modules in the real normal running conditions. Compared with the results of finite-element-based simulation and infrared temperature measurement, the proposed thermal model is verified.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115247946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on hermetic package of antiradiation direct-head transmitter","authors":"Chuanwei Wang, Yukun Wu, Jiabo Zhang, K. Pan, Daochang Wang, Yi Liang","doi":"10.1109/ICEPT52650.2021.9567906","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9567906","url":null,"abstract":"As an important component in antiradiation direct-head, the uniformity and reliability of transmitter paly the key role in the electrical performance. The characteristic of missile transmitter with high integration is plenty sidewall connectors, larger size, and the 4047 aluminum alloy plate is easy to cause weld airtight failure in helium leak detection process. To keep an excellent microwave properties and high reliability, it is of great importance to insure the gas tightness of transmitter. For this reason, higher requirements are proposed for the weld penetration and sealing quality, while the temperature rise should be under the melting point of low temperature brazing weld. In this paper, the laser welding technology in different energies was employed, weld penetration and sealing quality of the components were investigated after the laser welding process, meanwhile the temperature around the RF connector was also tested. On the basis of this, the appropriate weld penetration and corresponding laser energy for large-size transmitter are obtained, so that the gas tightness performance of the components is satisfied and superior to the requirements of GJB548B.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123011639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine Learning Enabled Optimization of Pick-up Process for Thin Die","authors":"Peilun Yao, Haibin Chen, Jinglei Yang, Jingshen Wu","doi":"10.1109/ICEPT52650.2021.9568235","DOIUrl":"https://doi.org/10.1109/ICEPT52650.2021.9568235","url":null,"abstract":"Driven by the demand of artificial intelligent, high-performance computing, electric vehicle and smart city, semiconductor industry is building high performance and high integrated systems. To increase the energy efficiency of these complicated systems, particularly in power modules, reducing the power consumption is needed. Thinning the die is one of the solutions, which can provide a lot of advantages including faster heat dissipation, low junction temperature, low electrical resistance, etc. However, due to its sensitivity of stress, processing of thin die is a challenging, including die pick-up process. In this paper, we proposed a methodology using machine learning and finite element method (FEM) to optimize the pin designs with the objective to minimize the stress in the die during pick-up process. A dynamic numerical model was first built up to simulate the stress distribution in the die during pick-up process, and a Gaussian process regression was applied to generate the relationships between pin parameters and die stress. Meanwhile, a Bayesian optimization was used to optimize the parameters. The optimized pin designs using the above methodology was further validated by FEM. Compared with traditional DOE method, the proposed methodology using machine learning and FEM exhibits much higher effectiveness in parameter optimization with less testing cost and efforts.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114497574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}