Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI最新文献_第6页

Investigation of reticle defect formation at DUV lithography DUV光刻中网纹缺陷形成的研究

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI Pub Date : 2002-12-24 DOI: 10.1109/ASMC.2003.1194462

K. Bhattacharyya, W. Volk, B. Grenon, D. D Brown, J. Ayala

{"title":"Investigation of reticle defect formation at DUV lithography","authors":"K. Bhattacharyya, W. Volk, B. Grenon, D. D Brown, J. Ayala","doi":"10.1109/ASMC.2003.1194462","DOIUrl":"https://doi.org/10.1109/ASMC.2003.1194462","url":null,"abstract":"Defect formation on advanced photomasks used for DUV lithography has introduced new challenges at low k/sub 1/ processes industry wide. Especially at 193 nm scanner exposure, the mask pattern surface, pellicle film and the enclosed space between the pellicle and pattern surface can create a highly reactive environment. This environment can become susceptible to defect growth during repetitive exposure of a mask on DUV lithography systems due to the flow of high energy through the mask. Due to increased number of fields on the wafer, a reticle used at a 300 mm wafer fab receives roughly double the number of exposures without any cool down period, as compared to the reticles in a 200 mm wafer fab. Therefore, 193 nm lithography processes at a 300 mm wafer fab put lithographers and defect engineers into an area of untested mask behavior. During the scope of this investigation, an attenuated phase shift mask (attPSM) was periodically exposed on a 193 nm scanner and the relationship between the number of exposures (i.e., energy passed through the mask during exposures) versus defect growth was developed. Finally, chemical analysis of these defects was performed in order to understand the mechanism of this \"growth\".","PeriodicalId":178755,"journal":{"name":"Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122370372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 51

Dual damascene trench depth control by Irm/spl trade/: a novel interferometric endpoint system 基于Irm/spl / trade/的双大马士革海沟深度控制:一种新型干涉测量端点系统

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI Pub Date : 1900-01-01 DOI: 10.1109/ASMC.2003.1194466

P. Mangiagalli, T. Chevolleau, N. Possémé, C. Frum, L. Sabnani, Z. Sui, M. Assous

引用次数: 0

Next generation production on 300 mm from pilot to volume 下一代300毫米的生产从试验到量产

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI Pub Date : 1900-01-01 DOI: 10.1109/ASMC.2003.1194472

K. Egger

{"title":"Next generation production on 300 mm from pilot to volume","authors":"K. Egger","doi":"10.1109/ASMC.2003.1194472","DOIUrl":"https://doi.org/10.1109/ASMC.2003.1194472","url":null,"abstract":"Summary form only given. Market conditions, especially in the commodity segment of DRAM, cost reduction is the driving force to achieve productivity improvement. The transition to next generation wafer size (300 mm) at that point in time was seen at Infineon crucial to gain additional productivity. Infineon is the leader in implementing 300 mm as next generation manufacturing technology. In 1998 the Joint Venture Semiconductor 300 (Infineon/Motorola) installed the worlds first 300 mm Pilotline at the existing Infineon Dresden facilities. The goal of this JV was to evaluate the 300 mm readiness for tool and process, automation and manufacturing. After qualification of the world's first product on 300 mm in 1999, a 64M DRAM and a fast yield ramp more than 10 million DRAMs have been shipped from this pilotline to the customer. In parallel, Infineon established a - think tank - team, Fab of the Future, to prepare the construction of a 300 mm volume fab as well as the equipment selection, with special attention to automation, process capability and productivity. The groundbreaking for the new fab at Dresden/Germany was in April 2000, just 12 month of construction followed, Ready for Equipment (RFE) was achieved April 2001 and the tools moved in. After a smooth Start Up in 2001 and continuous investment to increase capacity, Infineon Technologies SC300 is in a steep ramp of the world's first 300 mm memory fab with 256M DRAM in 140 nm Trench Capacitor technology, planning to reach final capacity in summer 2003. Parallel production will be moved to the next generation of DRAM in 110 nm technology. Tools and processes for 300 mm at Infineon SC300 have proven their production worthiness by achieving high productivity, low defectivity, high process stability and tool reliability. Subsequent the predicted productivity step of going to the next wafer size could be realized.","PeriodicalId":178755,"journal":{"name":"Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128580419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Process control and base line monitoring using optical 'On the Fly' and SEM classification as implemented in advanced DRAM manufacturing 在先进的DRAM制造中，使用光学“动态”和SEM分类进行过程控制和基线监控

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI Pub Date : 1900-01-01 DOI: 10.1109/ASMC.2003.1194469

S. Ralf, P. Sina, S. Dvori, M. Bernhard

{"title":"Process control and base line monitoring using optical 'On the Fly' and SEM classification as implemented in advanced DRAM manufacturing","authors":"S. Ralf, P. Sina, S. Dvori, M. Bernhard","doi":"10.1109/ASMC.2003.1194469","DOIUrl":"https://doi.org/10.1109/ASMC.2003.1194469","url":null,"abstract":"As technology advances and device complexity increases, an efficient combination of automatic Optical OTF (On The Fly) and SEM classification is required to ensure reliable and tight in-line process control. In order to monitor a wide variety of critical defects, patterned wafer inspection is performed at higher sensitivity. As a result in some process steps, such as Deep Trench, the overall defect level increases dramatically making the monitoring of critical defects difficult, since they represent a small percentage of the total count. The following article demonstrates that by integrating automatic classification on Optical inspection and SEM review, and setting up class density SPC on fab YMS it is possible to achieve efficient process control. The methodology that was developed at Infineon Dresden using Applied Materials' Compass inspection tool and SEMVision review system is presented together with the results obtained in the project. The implementation of OTF and SEM ADC at Infineon Deep Trench layer used high accuracy & purity classification strategy leading to efficient process control using base line class density monitoring. An alternative strategy based on lower accuracy/purity results allows class excursion control only. The two classification engines are complimentary to one another. OMNIVIEW technology provides the Compass with unique OTF classification capabilities. OTF is performed during the inspection and enables real time comprehensive feedback on the process by isolating and reporting critical defects. Class density monitoring on these defect types is done either with Compass or with the SEMVision, which offers higher resolution ADC. Smart sampling is performed after OTF and the pre-selected defect types are Classified with the SEMVision ADC. As a result of combined OTF and SEM ADC strategy, review capacity is utilized efficiently, and fulfills the lot-sampling requirement for optimal process control.","PeriodicalId":178755,"journal":{"name":"Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116244044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Endura XP: enabling high 300 mm semiconductor productivity and reliability for manufacturing excellence Endura XP:实现300毫米半导体的高生产率和可靠性，实现卓越的制造

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI Pub Date : 1900-01-01 DOI: 10.1109/ASMC.2003.1194491

F. Tice, C. Hagerty

引用次数: 0

Image field upgrade to improve tool productivity 图像现场升级，提高工具生产率

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI Pub Date : 1900-01-01 DOI: 10.1109/ASMC.2003.1194497

M. Dahmen, G. Kenyon

引用次数: 0