Journal of Vacuum Science and Technology最新文献_第7页

Improved properties of atomic layer deposited ruthenium via postdeposition annealing 沉积后退火工艺改善了钌原子层的性能

Journal of Vacuum Science and Technology Pub Date : 2021-07-27 DOI: 10.1116/6.0001078

Michael Hayes, M. Jenkins, J. Woodruff, D. Moser, C. Dezelah, J. F. ConleyJr.

{"title":"Improved properties of atomic layer deposited ruthenium via postdeposition annealing","authors":"Michael Hayes, M. Jenkins, J. Woodruff, D. Moser, C. Dezelah, J. F. ConleyJr.","doi":"10.1116/6.0001078","DOIUrl":"https://doi.org/10.1116/6.0001078","url":null,"abstract":"The resistivity, morphology, and effective work function of thin film ruthenium deposited by thermal atomic layer deposition (ALD) using η4-2,3-dimethylbutadiene ruthenium tricarbonyl [Ru(DMBD)(CO)3] and O2 are investigated before and after annealing at temperatures up to 500 °C. Annealing at 500 °C in either N2 or H2/N2 reduces the average resistivity of as-deposited 30 nm thick Ru films from 16.2 to as low as 13.7 or 9.1 μΩ cm, respectively, approaching the bulk value of Ru. X-ray diffraction shows that as-deposited films are polycrystalline hexagonal Ru. Annealing at 500 °C in either N2 or H2/N2 results in crystallite growth accompanied by a roughening of the surface from approximately 0.7 to 2.2 nm RMS, as shown by atomic force microscopy. Secondary ion mass spectroscopy shows low residual carbon and oxygen in as-deposited films. Annealing in N2 at 500 °C reduces only the carbon content, whereas annealing in H2/N2 at 500 °C results in a further reduction of carbon combined with reduction in oxygen as well. Using series of metal/oxide/silicon capacitors with varying oxide thickness, the effective work function of 500 °C H2/N2 annealed Ru films on ALD Al2O3 and HfO2 was determined to be approximately 4.9 and 5.3 eV, respectively. Using internal photoemission spectroscopy, the Ru/Al2O3 and Ru/HfO2 electron energy barrier heights were determined to be 3.4 ± 0.1 and 3.8 ± 0.1 eV, respectively.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81422408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Selective functionalization of partially etched SiNx to enhance SiO2 to SiNx etch selectivity 部分蚀刻SiNx的选择性官能化以提高SiO2对SiNx的蚀刻选择性

Journal of Vacuum Science and Technology Pub Date : 2021-07-26 DOI: 10.1116/6.0001110

Ryan J. Gasvoda, Xue Wang, Prabhat Kumar, E. Hudson, S. Agarwal

引用次数: 0

Elucidating energetics and kinetics in environmentally relevant mixed gas plasmas 阐明与环境相关的混合气体等离子体的能量学和动力学

Journal of Vacuum Science and Technology Pub Date : 2021-07-26 DOI: 10.1116/6.0001080

Tara L. Van Surksum, E. R. Fisher

引用次数: 0

Preparation and electronic structure of the WSe2/graphene/NiSex/Ni(111) heterostructure WSe2/石墨烯/NiSex/Ni(111)异质结构的制备与电子结构

Journal of Vacuum Science and Technology Pub Date : 2021-07-26 DOI: 10.1116/6.0001134

Roberto Sant, M. Cattelan, S. Agnoli, G. Granozzi

引用次数: 0

Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition 绿色气相沉积—化学气相沉积薄膜的可持续发展理念

Journal of Vacuum Science and Technology Pub Date : 2021-07-22 DOI: 10.1116/6.0001125

H. Pedersen, S. Barry, J. Sundqvist

引用次数: 13

Titanium monoxide and titanium dioxide thin film formation by magnetron sputtering and its thermodynamic model 磁控溅射制备氧化钛和二氧化钛薄膜及其热力学模型

Journal of Vacuum Science and Technology Pub Date : 2021-07-21 DOI: 10.1116/6.0001065

S. V. Bulyarskiy, D. Koiva, V. S. Belov, E. Zenova, G. Rudakov, G. Gusarov

引用次数: 0

Operando study of the preferential growth of SiO2 during the dry thermal oxidation of Si0.60Ge0.40(001) by ambient pressure x-ray photoelectron spectroscopy 用环境压力x射线光电子能谱研究Si0.60Ge0.40(001)干热氧化过程中SiO2的优先生长

Journal of Vacuum Science and Technology Pub Date : 2021-07-19 DOI: 10.1116/6.0001174

S. P. Lorona, J. Diulus, Jo E. Bergevin, R. Addou, G. Herman

{"title":"Operando study of the preferential growth of SiO2 during the dry thermal oxidation of Si0.60Ge0.40(001) by ambient pressure x-ray photoelectron spectroscopy","authors":"S. P. Lorona, J. Diulus, Jo E. Bergevin, R. Addou, G. Herman","doi":"10.1116/6.0001174","DOIUrl":"https://doi.org/10.1116/6.0001174","url":null,"abstract":"Controlling the grown oxide composition, the oxide/semiconductor interface properties, and the semiconductor surface composition is of interest for SiGe devices. We have used ambient-pressure x-ray photoelectron spectroscopy (AP-XPS) to study the initial stages of dry thermal oxidation of an epitaxial Si0.60Ge0.40(001) film on Si(001). Si 2p and Ge 3d chemical-state resolved AP-XPS was performed at 300 °C and O2 pressures ( P O 2 ) of 10−4, 10−2, and 1 mbar during oxide growth. The National Institute of Standards simulated electron spectra for surface analysis (SESSA) was used to analyze both the oxide composition and the thickness versus time for each pressure. At all three P O 2, the SESSA analysis indicated that oxidation proceeds via three oxide growth rate regimes: an initial rapid regime, an intermediate transitionary regime, and finally a quasisaturation slow regime. The Si and Ge oxidation rates were found to be pressure dependent during the rapid regime with both rates decreasing monotonically with decreasing pressure. Results indicated that Ge was much more sensitive to changes in P O 2 compared to Si. As a result, a decrease in P O 2 resulted in significant suppression of GeO2 formation compared to SiO2. Using SESSA, we were able to quantify the grown oxide composition and the thickness, both of which were strongly dependent on O2 pressure. The Ge composition, in Si1−xGexO2, was found to decrease monotonically with decreasing P O 2.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91000887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Functional plasma-sprayed hydroxylapatite coatings for medical application: Clinical performance requirements and key property enhancement 医用功能性等离子喷涂羟基磷灰石涂料:临床性能要求和关键性能增强

Journal of Vacuum Science and Technology Pub Date : 2021-07-19 DOI: 10.1116/6.0001132

R. Heimann

{"title":"Functional plasma-sprayed hydroxylapatite coatings for medical application: Clinical performance requirements and key property enhancement","authors":"R. Heimann","doi":"10.1116/6.0001132","DOIUrl":"https://doi.org/10.1116/6.0001132","url":null,"abstract":"Functional hydroxylapatite (HAp) coatings deposited by atmospheric plasma spraying on parts of hip and knee endoprosthetic implants, artificial dental roots, spinal implants, and other medical devices serve to aid in osseointegration by providing a biocompatible and osseoconductive/osseoinductive template for bone growth-supporting actions of cytokines and noncollagenous proteins and proteoglycans, mediated by transmembrane proteins such as integrins. To be successful in this task, HAp coatings need to be carefully designed and optimized by closely controlling key properties such as phase composition, degree of crystallinity, crystallographic texture, thickness, adhesion strength to the implant surface, porosity, pore size distribution, surface nanostructure and roughness, residual coating stresses, and dissolution kinetics during in vivo contact with extracellular fluid. As this contribution discusses salient aspects of design, properties, and application of HAp coatings, it attempts to chart ways toward improving their in vivo performance and, thus, may be considered a helping hand and guiding manual of instruction for their successful deposition. In this review, much contextual recourse has been taken to the work of the present author and his research group during the last two and a half decades.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89351671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Localized phase transition of TiO2 thin films induced by sub-bandgap laser irradiation 亚带隙激光辐照诱导TiO2薄膜的局域相变

Journal of Vacuum Science and Technology Pub Date : 2021-07-15 DOI: 10.1116/6.0001088

Syeed E. Ahmed, Violet M. Poole, John D. Igo, Y. Gu, M. McCluskey

引用次数: 4

Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices 量子器件原子层沉积氮化铌薄膜的片级均匀性

Journal of Vacuum Science and Technology Pub Date : 2021-07-14 DOI: 10.1116/6.0001126

E. Knehr, M. Ziegler, S. Linzen, K. Ilin, P. Schanz, J. Plentz, M. Diegel, H. Schmidt, E. Il'ichev, M. Siegel

{"title":"Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices","authors":"E. Knehr, M. Ziegler, S. Linzen, K. Ilin, P. Schanz, J. Plentz, M. Diegel, H. Schmidt, E. Il'ichev, M. Siegel","doi":"10.1116/6.0001126","DOIUrl":"https://doi.org/10.1116/6.0001126","url":null,"abstract":"Superconducting niobium nitride thin films are used for a variety of photon detectors, quantum devices, and superconducting electronics. Most of these applications require highly uniform films, for instance, when moving from single-pixel detectors to arrays with a large active area. Plasma-enhanced atomic layer deposition (ALD) of superconducting niobium nitride is a feasible option to produce high-quality, conformal thin films and has been demonstrated as a film deposition method to fabricate superconducting nanowire single-photon detectors before. Here, we explore the property spread of ALD-NbN across a 6-in. wafer area. Over the equivalent area of a 2-in. wafer, we measure a maximum deviation of 1% in critical temperature and 12% in switching current. Toward larger areas, structural characterizations indicate that changes in the crystal structure seem to be the limiting factor rather than film composition or impurities. The results show that ALD is suited to fabricate NbN thin films as a material for large-area detector arrays and for new detector designs and devices requiring uniform superconducting thin films with precise thickness control.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76295038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9