量子器件原子层沉积氮化铌薄膜的片级均匀性

E. Knehr, M. Ziegler, S. Linzen, K. Ilin, P. Schanz, J. Plentz, M. Diegel, H. Schmidt, E. Il'ichev, M. Siegel
{"title":"量子器件原子层沉积氮化铌薄膜的片级均匀性","authors":"E. Knehr, M. Ziegler, S. Linzen, K. Ilin, P. Schanz, J. Plentz, M. Diegel, H. Schmidt, E. Il'ichev, M. Siegel","doi":"10.1116/6.0001126","DOIUrl":null,"url":null,"abstract":"Superconducting niobium nitride thin films are used for a variety of photon detectors, quantum devices, and superconducting electronics. Most of these applications require highly uniform films, for instance, when moving from single-pixel detectors to arrays with a large active area. Plasma-enhanced atomic layer deposition (ALD) of superconducting niobium nitride is a feasible option to produce high-quality, conformal thin films and has been demonstrated as a film deposition method to fabricate superconducting nanowire single-photon detectors before. Here, we explore the property spread of ALD-NbN across a 6-in. wafer area. Over the equivalent area of a 2-in. wafer, we measure a maximum deviation of 1% in critical temperature and 12% in switching current. Toward larger areas, structural characterizations indicate that changes in the crystal structure seem to be the limiting factor rather than film composition or impurities. The results show that ALD is suited to fabricate NbN thin films as a material for large-area detector arrays and for new detector designs and devices requiring uniform superconducting thin films with precise thickness control.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":"1 1","pages":"052401"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices\",\"authors\":\"E. Knehr, M. Ziegler, S. Linzen, K. Ilin, P. Schanz, J. Plentz, M. Diegel, H. Schmidt, E. Il'ichev, M. Siegel\",\"doi\":\"10.1116/6.0001126\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Superconducting niobium nitride thin films are used for a variety of photon detectors, quantum devices, and superconducting electronics. Most of these applications require highly uniform films, for instance, when moving from single-pixel detectors to arrays with a large active area. Plasma-enhanced atomic layer deposition (ALD) of superconducting niobium nitride is a feasible option to produce high-quality, conformal thin films and has been demonstrated as a film deposition method to fabricate superconducting nanowire single-photon detectors before. Here, we explore the property spread of ALD-NbN across a 6-in. wafer area. Over the equivalent area of a 2-in. wafer, we measure a maximum deviation of 1% in critical temperature and 12% in switching current. Toward larger areas, structural characterizations indicate that changes in the crystal structure seem to be the limiting factor rather than film composition or impurities. The results show that ALD is suited to fabricate NbN thin films as a material for large-area detector arrays and for new detector designs and devices requiring uniform superconducting thin films with precise thickness control.\",\"PeriodicalId\":17571,\"journal\":{\"name\":\"Journal of Vacuum Science and Technology\",\"volume\":\"1 1\",\"pages\":\"052401\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0001126\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0001126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

超导氮化铌薄膜用于各种光子探测器、量子器件和超导电子器件。大多数这些应用需要高度均匀的薄膜,例如,当从单像素探测器移动到具有大有源区域的阵列时。等离子体增强原子层沉积(ALD)超导氮化铌是制备高质量保形薄膜的一种可行选择,并已被证明是一种制备超导纳米线单光子探测器的薄膜沉积方法。在这里,我们探索了ALD-NbN在6-in的属性分布。晶片区域。除以2英寸的等量面积。我们测量了临界温度和开关电流的最大偏差分别为1%和12%。对于更大的区域,结构表征表明晶体结构的变化似乎是限制因素,而不是薄膜成分或杂质。结果表明,ALD适合制造NbN薄膜,作为大面积探测器阵列的材料,以及需要均匀超导薄膜和精确厚度控制的新型探测器设计和器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
Superconducting niobium nitride thin films are used for a variety of photon detectors, quantum devices, and superconducting electronics. Most of these applications require highly uniform films, for instance, when moving from single-pixel detectors to arrays with a large active area. Plasma-enhanced atomic layer deposition (ALD) of superconducting niobium nitride is a feasible option to produce high-quality, conformal thin films and has been demonstrated as a film deposition method to fabricate superconducting nanowire single-photon detectors before. Here, we explore the property spread of ALD-NbN across a 6-in. wafer area. Over the equivalent area of a 2-in. wafer, we measure a maximum deviation of 1% in critical temperature and 12% in switching current. Toward larger areas, structural characterizations indicate that changes in the crystal structure seem to be the limiting factor rather than film composition or impurities. The results show that ALD is suited to fabricate NbN thin films as a material for large-area detector arrays and for new detector designs and devices requiring uniform superconducting thin films with precise thickness control.
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