2020 IEEE Applied Power Electronics Conference and Exposition (APEC)最新文献_第8页

Resonant Flyback PV Microinverter With Low Component Count 谐振反激式低分量PV微型逆变器

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124505

S. Jo, Hwasoo Seok, Junsik Kim, Minsung Kim

引用次数: 1

High-Efficiency Model Predictive Control for Star-Connected Cascaded H-Bridge STATCOM Under Unbalanced Conditions 不平衡条件下星形连接级联h桥STATCOM的高效模型预测控制

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124355

Yufei Li, Yue Zhao, Fei Diao

引用次数: 4

Optimal Self-Tuning Control for Data-Centers’ 48V-12V ZCS-STC 数据中心48V-12V ZCS-STC的最优自调谐控制

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124129

Guy Sovik, Tom Urkin, Erez Erzol Masandilov, Mor Mordechai Peretz

引用次数: 2

A Coupled-Inductor Dc Breaker with STFT-Based Arc Detection 一种基于stft电弧检测的耦合电感直流断路器

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124335

A. Maqsood, N. Rossi, Yue Ma, K. Corzine, L. Parsa, D. Oslebo

引用次数: 1

Self-Synchronizing Current Control of a Three-Phase Grid- Connected Inverter in the Presence of Unknown Grid Parameters 未知电网参数下三相并网逆变器的自同步电流控制

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9123992

Joseph Latham, Moath H. A. Alqatamin, Z. T. Smith, B. Grainger, M. McIntyre

引用次数: 3

Diagnosing for Cross-conduction in GaN Half-Bridge GaN半桥交叉传导的诊断

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124086

Ya-jie Qiu, Jinseng Vanderkloot, Ruoyu Hou, Juncheng Lu

{"title":"Diagnosing for Cross-conduction in GaN Half-Bridge","authors":"Ya-jie Qiu, Jinseng Vanderkloot, Ruoyu Hou, Juncheng Lu","doi":"10.1109/APEC39645.2020.9124086","DOIUrl":"https://doi.org/10.1109/APEC39645.2020.9124086","url":null,"abstract":"GaN E-HEMTs eliminate the inherent parasitic diodes compared to Si MOSFETs and have faster switching speeds and slew rates [1]. These and other improved characteristics of GaN E-HEMTs have reduced system size and weight, have delivered lower system costs and have increased efficiency [2]. However, advancements in the GaN HEMTs used in switching power supplies have made characterizing the performance of these power supplies increasingly challenging. A particularly demanding measurement is measuring the high-side VGS in a half bridge, which is a traditional way to diagnose the cross-conduction for Si MOSFETs. Although special probes and measurement systems with galvanic isolation (optical isolation) have been developed for this purpose, GaN users are discouraged by the cost and are seeking a lower cost method to diagnose GaN cross-conduction. By taking advantage of GaN’s unique feature (no body diode and reverse recovery loss), this paper is proposing a practical way to diagnose the cross-conduction /potential cross-conduction without sensing the high-side VGS: i. Calculating the high-side Coss charge during the voltage commutation; ii. Implementing a set of double pulse tests and recording the low-side drain currents; iii. Integrating the low-side drain current bump area above the load current and iv. Confirming that the result should match the COSS charge value. The proposed diagnostic method has been demonstrated by using the 25 mΩ RDS_on 650V GaN HEMT GS66516T as an example.","PeriodicalId":171455,"journal":{"name":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132480246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Analysis and Evaluation of Thermally Annealed Pyrolytic Graphite Heat Spreader for Power Modules 功率模块热退火热解石墨散热片的分析与评价

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124080

E. Gurpinar, B. Ozpineci, John Preston Spires, W. Fan

引用次数: 2

A Novel Real-Time Junction Temperature Monitoring Circuit for SiC MOSFET 一种新型的SiC MOSFET结温实时监测电路

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124486

Hengyu Yu, Xi Jiang, Jianjun Chen, Jun Wang, Z. Shen

引用次数: 6

State-of-Charge Control with Series Output Connected DC-DC Modules in Active Battery Management Systems 有源电池管理系统中串联输出连接DC-DC模块的充电状态控制

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124376

Mohamed Kamel, V. Sankaranarayanan, R. Zane, D. Maksimović

引用次数: 0

900-V SiC Based, Two-Phase Interleaved, Single Inductor, RSCC DC/DC Converter for Use in 1500VDC PV Application 1500VDC光伏应用中基于900 v SiC的两相交错单电感RSCC DC/DC变换器

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2020-03-01 DOI: 10.1109/APEC39645.2020.9124168

Branislav Stevanović, M. Vasić, P. Alou, J. Cobos

{"title":"900-V SiC Based, Two-Phase Interleaved, Single Inductor, RSCC DC/DC Converter for Use in 1500VDC PV Application","authors":"Branislav Stevanović, M. Vasić, P. Alou, J. Cobos","doi":"10.1109/APEC39645.2020.9124168","DOIUrl":"https://doi.org/10.1109/APEC39645.2020.9124168","url":null,"abstract":"Two-phase interleaved resonant switched capacitor (RSCC) topology with the single resonant inductor in the series with input connection, for use in 1500VDC two-stage PV systems connected to the grid, is presented in this paper. Two switching legs with its resonant capacitors operate in counter phase with 50% of duty cycle. In this way, total capacitance seen by the resonant inductor is doubled, compared to the single-phase case. This behaviour provides the possibility of the reduction of DC bus capacitors volume. Additionally, ripple in the DC bus capacitors is significantly reduced due to the fact that the energy of the resonant inductor is transfered to the output in both halfs of the resonant cycle, compared to the single-phase case. Full ZVS transitions in all 900V SiC devices is obtained, under all loads and input voltage conditions. Model of the resonant current shape that is forced for obtaining ZVS transitions in the switching devices is explained and presented. On the contrary to the previous, simple sinusoidal approximation of the resonant current that can describe the behaviour of the topology only under nominal load, this model can describe the behaviour of the resonant current under all loads and input voltage conditions. This model can be implemented in any kind of the optimization algorythm that is based on the euro efficiency as a performance indice. Additionally, a back-to-back losses measurement technique for voltage-fed converters that operate in open loop is presented. Previously described theoretical analysis of the presented topology is justified by building a 7kW prototype of 99.75% of euro efficiency and 12.1kW/kg of the specific power.","PeriodicalId":171455,"journal":{"name":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127914291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1