Journal of Vacuum Science & Technology A最新文献_第7页

Computational study and ion diffusion analyses of native defects and indium alloying in β-Ga2O3 structures β-Ga2O3结构中原生缺陷和铟合金化的计算研究和离子扩散分析

Journal of Vacuum Science & Technology A Pub Date : 2024-03-28 DOI: 10.1116/6.0003435

N. R. Martins, Luiz Augusto Ferreira de Campos Viana, Alan Antônio das Graças Santos, Daiane Damasceno Borges, Eric Welch, P. Borges, L. Scolfaro

{"title":"Computational study and ion diffusion analyses of native defects and indium alloying in β-Ga2O3 structures","authors":"N. R. Martins, Luiz Augusto Ferreira de Campos Viana, Alan Antônio das Graças Santos, Daiane Damasceno Borges, Eric Welch, P. Borges, L. Scolfaro","doi":"10.1116/6.0003435","DOIUrl":"https://doi.org/10.1116/6.0003435","url":null,"abstract":"Wide band gap semiconductors like gallium oxide are promising materials for high-power optoelectronic device applications. We show here a combined density functional theory and molecular dynamics study of diffusion pathways for different defects in β-Ga2O3. Molecular dynamics simulations result in a smaller equilibrium volume compared to density functional theory, but the overall lattice remains relatively unchanged even with the inclusion of defects, outside of the local distortions that occur to accommodate the presence of a defect. Slight thermal expansion occurs with elevated temperature and a combination of electron localization function and Bader charge analysis reveals that the oxygen interstitial is the most mobile defect as temperature is increased. However, interstitial cations may diffuse at elevated temperature due to a relatively small amount of charge transfer between the defect and lattice. The mobile oxygen defects are shown to increase the mobility of oxygen ions from the lattice, which can be beneficial for electrochemical applications when controlled through annealing processes.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"128 37","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140369780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Properties of low-resistivity molybdenum metal thin film deposited by atomic layer deposition using MoO2Cl2 as precursor 以二氧化钼（MoO2Cl2）为前驱体，通过原子层沉积法沉积的低电阻率钼金属薄膜的特性

Journal of Vacuum Science & Technology A Pub Date : 2024-03-27 DOI: 10.1116/6.0003361

So Young Kim, Chunghee Jo, Hyerin Shin, D. Yoon, D. Shin, Min-ho Cheon, Kyu-beom Lee, D. Seo, Jae-wook Choi, Heungsoo Park, Dae-Hong Ko

引用次数: 0

Effect of template on the photoresponsivity of BaSi2 films grown on Ge(111) substrates by molecular beam epitaxy 模板对分子束外延法在 Ge(111) 基质上生长的 BaSi2 薄膜光致发光性的影响

Journal of Vacuum Science & Technology A Pub Date : 2024-03-27 DOI: 10.1116/6.0003503

S. Aonuki, Kaori Takayanagi, Ai Iwai, K. Toko, T. Suemasu

{"title":"Effect of template on the photoresponsivity of BaSi2 films grown on Ge(111) substrates by molecular beam epitaxy","authors":"S. Aonuki, Kaori Takayanagi, Ai Iwai, K. Toko, T. Suemasu","doi":"10.1116/6.0003503","DOIUrl":"https://doi.org/10.1116/6.0003503","url":null,"abstract":"Epitaxial growth of BaSi2 films on Si(111) has demonstrated that the BaSi2 template can serve as a seed crystal for BaSi2 overlayers by molecular beam epitaxy (MBE) and shows high photoresponsivity, but not yet on Ge(111) substrates. We have investigated the effect of various templates on the photoresponsivity of BaSi2 films grown on Ge(111) substrates. Samples with MBE-grown templates exhibited high a-axis orientation, but the surface was uneven, leading to partial oxidation of the BaSi2 film. On the other hand, the sample without such templates showed a smoother surface but was confirmed to be polycrystalline. When a template formed by the combination of solid phase epitaxy (SPE) and subsequent annealing for 30 min was used, a-axis-oriented BaSi2 together with 111-oriented Si appeared in the θ–2θ x-ray diffraction (XRD) patterns. The fact that no crystalline Si was detected by the surface-sensitive Raman spectroscopy and that the full width at half maximum of the XRD BaSi2 600 peak was increased to 2.686° in such samples suggests that Si aggregates were at the BaSi2/Ge interface. The photoresponsivity of the epitaxial BaSi2 film with MBE-grown templates reached 0.14 A W−1 at a wavelength of 790 nm. This is the highest photoresponsivity reported so far for BaSi2 films on Ge substrates. Even for samples without the MBE-grown templates, SPE-grown templates significantly increased the photoresponsivity up to 0.10 A W−1. These results confirm that the template has a significant impact on the photoresponsivity of BaSi2 films on Ge(111) substrates.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"5 21","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140374942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension 使用 p-NiO 结终端扩展的 Ni/TiO2/β-Ga2O3 金属介质半导体二极管的实验研究

Journal of Vacuum Science & Technology A Pub Date : 2024-03-26 DOI: 10.1116/6.0003467

Jeremiah Williams, Weisong Wang, N. Hendricks, Aaron Adams, Joshua Piel, D. Dryden, K. Liddy, N. Sepelak, Bradley Morell, A. Islam, Andrew J. Green

{"title":"Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension","authors":"Jeremiah Williams, Weisong Wang, N. Hendricks, Aaron Adams, Joshua Piel, D. Dryden, K. Liddy, N. Sepelak, Bradley Morell, A. Islam, Andrew J. Green","doi":"10.1116/6.0003467","DOIUrl":"https://doi.org/10.1116/6.0003467","url":null,"abstract":"This work demonstrates TiO2/β-Ga2O3 metal–dielectric–semiconductor (MDS) diodes with an average breakdown field beyond the material limits of SiC and GaN. These MDS diodes have lower conduction losses and higher breakdown voltage (Vbk) than the cofabricated Schottky barrier diodes (SBDs), simultaneously improving both on- and off-state parameters that are typically in competition with each other. With further optimized field management using p-NiO guard rings (GRs), the Ni/TiO2/β-Ga2O3 MDS diodes present a path to realistically utilize the high critical field of Ga2O3 without large forward conduction losses from a high-barrier junction. MDS diodes showed a lower Von (0.8 V) than the SBDs (1.1 V) from linear extrapolation of the current density-voltage (J-V) curve. The MDS diode had higher Vbk of 1190 V (3.0 MV/cm) compared to 685 V (2.3 MV/cm) for the SBD, and the MDS diode with the p-NiO guard ring saw further improvement with Vbk of 1776 V (3.7 MV/cm) compared to 826 V (2.5 MV/cm) for GR SBD. The BFOM (Vbk2/Ron,sp) of 518 MW/cm2 for the GR HJD is competitive with other literature results. A new figure of merit that includes the impact of turn on voltage is also proposed and demonstrated in this paper, which highlights how diodes perform in a practical high-power operation. This full paper is derived from the proceeding abstract of Willams et al. [IEEE Device Research Conference, Santa Barbara, CA, 25-28 June 2023 (IEEE, New York, 2023)].","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"107 32","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140380584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface temperature of a 2 in. Ti target during DC magnetron sputtering 直流磁控溅射过程中 2 英寸钛靶的表面温度直流磁控溅射过程中的钛靶

Journal of Vacuum Science & Technology A Pub Date : 2024-03-22 DOI: 10.1116/6.0003481

Carlos Ramos, Daniela S. Jacobo-Mora, J. Cruz, Stephen Muhl

引用次数: 0

Effects of magnetic field gradient on capacitively coupled plasma driven by tailored voltage waveforms 磁场梯度对定制电压波形驱动的电容耦合等离子体的影响

Journal of Vacuum Science & Technology A Pub Date : 2024-03-22 DOI: 10.1116/6.0003324

Huanhuan Wu, Minghan Yan, Hao Wu, Shali Yang

引用次数: 0

Stability investigation of Eu3+ doped CaF2 thin film with ZnO coating under electron beam irradiation 掺杂 Eu3+ 的氧化锌涂层 CaF2 薄膜在电子束辐照下的稳定性研究

Journal of Vacuum Science & Technology A Pub Date : 2024-03-21 DOI: 10.1116/6.0003363

R. A. A. Abdallah, R. Kroon, E. Coetsee, E. Hasabeldaim, H. Swart

引用次数: 0

Electrical conductivity, luminescence, and deep acceptor levels in β-Ga2O3-In2O3 polycrystalline solid solution doped with Zr4+ or Ca2+ ions 掺杂 Zr4+ 或 Ca2+ 离子的 β-Ga2O3-In2O3 多晶固溶体的导电性、发光和深受体水平

Journal of Vacuum Science & Technology A Pub Date : 2024-03-20 DOI: 10.1116/6.0003466

A. Luchechko, V. Vasyltsiv, M. Kushlyk, L. Kostyk, D. Slobodzyan

{"title":"Electrical conductivity, luminescence, and deep acceptor levels in β-Ga2O3-In2O3 polycrystalline solid solution doped with Zr4+ or Ca2+ ions","authors":"A. Luchechko, V. Vasyltsiv, M. Kushlyk, L. Kostyk, D. Slobodzyan","doi":"10.1116/6.0003466","DOIUrl":"https://doi.org/10.1116/6.0003466","url":null,"abstract":"Photoluminescence, luminescence excitation spectra, and electrical conductivity of β-Ga2O3-In2O3 solid solutions were studied. For this purpose, polycrystalline samples of unintentionally doped (UID) and doped with Ca or Zr β-Ga2O3-In2O3 solid solution with 20% In were synthesized and characterized. All samples were obtained by the high-temperature solid-phase method from appropriate oxides at 1300 °C at low and high oxygen partial pressure. It was established that UID and doped with Ca2+ or Zr4+ samples synthesized in an oxygen atmosphere were highly resistive, while the samples synthesized in an argon atmosphere had high conductivity. The conductivity was the lowest in the samples doped with Ca2+ and was 10−13 Ω−1 cm−1, while in the samples doped with Zr4+, the electrical conductivity was the highest and reached 10−3 Ω−1 cm−1. The broadband luminescence of β-Ga2O3-In2O3 solid solution is a superposition of three elementary bands with maxima in the violet 3.08 eV, blue 2.73 eV, and green 2.45 eV regions of the spectrum. Doping with Ca2+ or Zr4+ impurities and varying the synthesis atmosphere led mainly to a redistribution of intensities between the elementary luminescence bands. The luminescence arises from the radiative recombination of charge carriers through donor–acceptor pairs and self-localized holes. Donors and acceptors are formed by native defects such as (Gai, VGa, VGaVo) or doping impurities (Zr4+, Ca2+). Unlike the luminescence spectra, the luminescence excitation spectra change significantly when the synthesis conditions vary or when doping with divalent impurities. The excitation band at 4.46 eV is due to electron transitions from the VGa or VGaVO acceptor levels to the conduction band. Electron transitions from acceptor levels of Ca2+ impurities are manifested in the intense excitation band at 4.1 eV.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"70 s1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140225241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of high-temperature postannealing atmosphere on the properties of BaSi2 films 高温退火后气氛对 BaSi2 薄膜性能的影响

Journal of Vacuum Science & Technology A Pub Date : 2024-03-20 DOI: 10.1116/6.0003505

Ai Iwai, S. Aonuki, Shunsuke Narita, Kaori Takayanagi, K. Toko, T. Suemasu

{"title":"Effect of high-temperature postannealing atmosphere on the properties of BaSi2 films","authors":"Ai Iwai, S. Aonuki, Shunsuke Narita, Kaori Takayanagi, K. Toko, T. Suemasu","doi":"10.1116/6.0003505","DOIUrl":"https://doi.org/10.1116/6.0003505","url":null,"abstract":"We evaluated the effect of O atoms on the postannealed BaSi2 films grown by molecular beam epitaxy. Postannealing (PA) in an Ar atmosphere at a pressure of 1.9 × 105 Pa increased the O concentration to 7 × 1020 cm−3 in the bulk region and further increased to ∼1022 cm−3 at the BaSi2/Si interface. Cracks formed during the PA process, allowing O to enter more easily to the BaSi2 films. In the x-ray photoelectron spectroscopy spectrum of the Si 2s core level measured at 10 nm from the surface, a shift of the peak related to SiOx was detected, indicating a change in the bonding state of Si and O in this region. When PA was performed in vacuum at 10−3 Pa, the photoresponsivity in the short wavelength region was enhanced, with a maximum value of 6.6 A W−1 at 790 nm. The O concentration in the film decreased in the sample annealed in vacuum, and the PL peak intensity at 0.85 eV decreased, suggesting that this was due to a decrease in O-related defects compared to the Ar atmosphere. However, agglomeration of BaSi2 caused significant surface roughness, indicating the importance of PA conditions that minimize O uptake and keep the surface smooth for improved performance of BaSi2 solar cells.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"10 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140226288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films 相关狄拉克半金属 Pv-CaIrO3 外延薄膜中应变诱导的电子结构调制

Journal of Vacuum Science & Technology A Pub Date : 2024-03-20 DOI: 10.1116/6.0003462

Jian-ming Ding, Zhengtai Liu, Jiayu Liu, Jian Yuan, Liyang Wei, Zhicheng Jiang, Yichen Yang, Chihao Li, Yilin Wang, Yanfeng Guo, Mao Ye, Jishan Liu, Dawei Shen

{"title":"Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films","authors":"Jian-ming Ding, Zhengtai Liu, Jiayu Liu, Jian Yuan, Liyang Wei, Zhicheng Jiang, Yichen Yang, Chihao Li, Yilin Wang, Yanfeng Guo, Mao Ye, Jishan Liu, Dawei Shen","doi":"10.1116/6.0003462","DOIUrl":"https://doi.org/10.1116/6.0003462","url":null,"abstract":"Perovskite CaIrO3 is theoretically predicted to be a Dirac node semimetal near the Mott transition, which possesses a considerable interplay between electron correlations and spin–orbit coupling. Electron correlations can significantly tune the behavior of relativistic Dirac fermions. Here, we have grown high-quality perovskite CaIrO3 thin films on different substrates using oxide molecular beam epitaxy to modulate both electron correlations and Dirac electron states. Through in situ angle-resolved photoemission spectroscopy, we demonstrate a systematic evolution of the bandwidth and effective mass of Jeff=1/2 band in perovskite CaIrO3 induced by strain. The bandwidth of the Jeff=1/2 band undergoes an evident increase under in-plane compressive strain, which could be attributed to the weakening of electron correlations. The compressive strain can potentially shift the position of the Dirac node relative to the Fermi level and play a vital role in the transition from hole-type to electron-type transport characteristics. Our work provides a feasible approach for manipulating the topological Dirac electron states by engineering the strength of electron correlations.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"360 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140228078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Journal of Vacuum Science &amp; Technology A最新文献

Journal of Vacuum Science & Technology A最新文献