Surface temperature of a 2 in. Ti target during DC magnetron sputtering

Carlos Ramos, Daniela S. Jacobo-Mora, J. Cruz, Stephen Muhl
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Abstract

Recently, there has been increasing interest in the use of hot targets to enhance the sputter deposition of materials. However, the actual temperature of the target surface is normally not known. In this work, we directly measured the radial distribution of the surface temperature of a MAK 2 in. Ti water-cooled target using a type K thermocouple during the operation of the sputtering system. Principally, the measurements were made as a function of applied DC power and argon gas pressure. Given the importance of chemical reactions between the gas and the target during reactive sputtering, we have also measured the target temperature as a function of the nitrogen concentration in an argon-nitrogen gas mixture. A few of the reactively sputtered samples were analyzed by x-ray photoelectron spectroscopy.
直流磁控溅射过程中 2 英寸钛靶的表面温度直流磁控溅射过程中的钛靶
最近,人们对使用热靶材提高材料的溅射沉积效果越来越感兴趣。然而,靶材表面的实际温度通常并不为人所知。在这项工作中,我们使用 K 型热电偶直接测量了 MAK 2 英寸钛水冷靶表面温度的径向分布。在溅射系统运行期间,我们使用 K 型热电偶直接测量了 MAK 2 英寸钛水冷靶表面温度的径向分布。测量结果主要是应用直流电功率和氩气压力的函数。鉴于反应溅射过程中气体和靶材之间化学反应的重要性,我们还测量了靶材温度与氩氮混合气体中氮气浓度的函数关系。我们用 X 射线光电子能谱分析了一些反应溅射样品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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