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Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction 岛源结双工作功能线隧道场效应晶体管的优化设计
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-08-31 DOI: 10.5573/jsts.2023.23.4.207
Chaewon Yun, Sangwan Kim, Seongjae Cho, Il-Hwan Cho, Hyunwoo Kim, Jang-Hyun Kim, Garam Kim
{"title":"Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction","authors":"Chaewon Yun, Sangwan Kim, Seongjae Cho, Il-Hwan Cho, Hyunwoo Kim, Jang-Hyun Kim, Garam Kim","doi":"10.5573/jsts.2023.23.4.207","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.4.207","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79009251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure BCAT结构中球形浅沟槽隔离降低通栅效应
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-08-31 DOI: 10.5573/jsts.2023.23.4.236
Yeon-Seok Kim, Chang-Young Lim, Min-Woo Kwon
{"title":"Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure","authors":"Yeon-Seok Kim, Chang-Young Lim, Min-Woo Kwon","doi":"10.5573/jsts.2023.23.4.236","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.4.236","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86022778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lossless LUT Compressions for Image Enhancement 无损LUT压缩图像增强
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.162
Sunmyung Kim, Jaehee You
{"title":"Lossless LUT Compressions for Image Enhancement","authors":"Sunmyung Kim, Jaehee You","doi":"10.5573/jsts.2023.23.3.162","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.162","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84374003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dependency of Spiking Behaviors of an Integrate-and-fire Neuron Circuit on Shunt Capacitor 分路电容对集火神经元电路尖峰行为的影响
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.189
K. Arati, E. Cho, Hyungsoon Shin, Seong-Taek Cho
{"title":"Dependency of Spiking Behaviors of an Integrate-and-fire Neuron Circuit on Shunt Capacitor","authors":"K. Arati, E. Cho, Hyungsoon Shin, Seong-Taek Cho","doi":"10.5573/jsts.2023.23.3.189","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.189","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78679295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device Optimization for Short-channel Effects Suppression in UFETs ufet短通道效应抑制的器件优化
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.183
S. Yoon, Ja-Yun Ku, Khwang-Sun Lee, Dae-Han Jung, Dong-Hyun Wang, Jun-Young Park
{"title":"Device Optimization for Short-channel Effects Suppression in UFETs","authors":"S. Yoon, Ja-Yun Ku, Khwang-Sun Lee, Dae-Han Jung, Dong-Hyun Wang, Jun-Young Park","doi":"10.5573/jsts.2023.23.3.183","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.183","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90459662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Random Forest-based Thermal Effect Prediction for Clock Tree Synthesis in 3D-IC 基于随机森林的3D-IC时钟树合成热效应预测
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.149
Myeongwoo Jin, Deokkeun Oh, Juho Kim
{"title":"Random Forest-based Thermal Effect Prediction for Clock Tree Synthesis in 3D-IC","authors":"Myeongwoo Jin, Deokkeun Oh, Juho Kim","doi":"10.5573/jsts.2023.23.3.149","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.149","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77235352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory 垂直NAND闪存的GIDL擦除特性分析
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.196
Honam Yoo, Yeongheon Yang, Min-Kyu Park, Woo-Young Choi, Jang-Sik Lee
{"title":"Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory","authors":"Honam Yoo, Yeongheon Yang, Min-Kyu Park, Woo-Young Choi, Jang-Sik Lee","doi":"10.5573/jsts.2023.23.3.196","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.196","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84294692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Digital FLL-based Sub-harmonically Injection-locked PLL with Resolution-multiplied TDC for Frequency Offset Cancellation 一种基于数字锁相环的次谐波注入锁相环，具有分辨率倍增上止点，用于频率偏移抵消
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.202
Jongchan An, Seung-Myeong Yu, Junwon Jeong, Junyoung Song
{"title":"A Digital FLL-based Sub-harmonically Injection-locked PLL with Resolution-multiplied TDC for Frequency Offset Cancellation","authors":"Jongchan An, Seung-Myeong Yu, Junwon Jeong, Junyoung Song","doi":"10.5573/jsts.2023.23.3.202","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.202","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82180311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Resolution Reconfigurable Hybrid ADC with Register-switching Method for Bio-signal Processing 一种用于生物信号处理的分辨率可重构寄存器切换混合ADC
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.176
Min-seong Kang, K. Yoon
{"title":"A Resolution Reconfigurable Hybrid ADC with Register-switching Method for Bio-signal Processing","authors":"Min-seong Kang, K. Yoon","doi":"10.5573/jsts.2023.23.3.176","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.176","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79423337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An 11-bit 160-MS/s Non-binary C-based SAR ADC with a Partially Monotonic Switching Scheme 一种部分单调开关的11位160 ms /s非二进制c型SAR ADC
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-04-30 DOI: 10.5573/jsts.2023.23.2.118
Jae-Hyuk Lee, Seunghoon Lee, Jun-Ho Boo, Jun-Sang Park, Tai-Ji An, Hee-Wook Shin, Young-Jae Cho, Michael Choi, J. Burm, G. Ahn
{"title":"An 11-bit 160-MS/s Non-binary C-based SAR ADC with a Partially Monotonic Switching Scheme","authors":"Jae-Hyuk Lee, Seunghoon Lee, Jun-Ho Boo, Jun-Sang Park, Tai-Ji An, Hee-Wook Shin, Young-Jae Cho, Michael Choi, J. Burm, G. Ahn","doi":"10.5573/jsts.2023.23.2.118","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.2.118","url":null,"abstract":"—This work proposes a single-channel 11-bit successive-approximation register (SAR) analog-to-digital converter (ADC) with an operating speed of 160-MS/s based on a non-binary digital-to-analog converter (DAC) for settling error correction. In the proposed DAC, a non-binary-weighted structure with redundancy is employed for the upper 8-bit capacitor array to reduce the residual voltage settling time requirement, facilitating high-speed operation. The remaining 3-bit capacitor array is composed of three unit capacitors, which are attached to the fractional reference voltages generated from a resistor string (R-string). The proposed partially monotonic switching scheme reduces the switching power consumption and the common-mode voltage variations of the DAC output voltage. The proposed 3D-encapsulated capacitor layout reduces the interference of adjacent signals while securing the high linearity of capacitors. Implemented in a 28 nm CMOS, the proposed ADC consumes 1.67 mW of power with a 1.0 V supply voltage and occupies an active area of 0.026 mm 2","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83317392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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