发布求助
文献互助 智能选刊 最新文献

Journal of Semiconductor Technology and Science最新文献

筛选
英文 中文
A Resolution Reconfigurable Hybrid ADC with Register-switching Method for Bio-signal Processing 一种用于生物信号处理的分辨率可重构寄存器切换混合ADC
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.176
Min-seong Kang, K. Yoon
{"title":"A Resolution Reconfigurable Hybrid ADC with Register-switching Method for Bio-signal Processing","authors":"Min-seong Kang, K. Yoon","doi":"10.5573/jsts.2023.23.3.176","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.176","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"2 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79423337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An 11-bit 160-MS/s Non-binary C-based SAR ADC with a Partially Monotonic Switching Scheme 一种部分单调开关的11位160 ms /s非二进制c型SAR ADC
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-04-30 DOI: 10.5573/jsts.2023.23.2.118
Jae-Hyuk Lee, Seunghoon Lee, Jun-Ho Boo, Jun-Sang Park, Tai-Ji An, Hee-Wook Shin, Young-Jae Cho, Michael Choi, J. Burm, G. Ahn
{"title":"An 11-bit 160-MS/s Non-binary C-based SAR ADC with a Partially Monotonic Switching Scheme","authors":"Jae-Hyuk Lee, Seunghoon Lee, Jun-Ho Boo, Jun-Sang Park, Tai-Ji An, Hee-Wook Shin, Young-Jae Cho, Michael Choi, J. Burm, G. Ahn","doi":"10.5573/jsts.2023.23.2.118","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.2.118","url":null,"abstract":"—This work proposes a single-channel 11-bit successive-approximation register (SAR) analog-to-digital converter (ADC) with an operating speed of 160-MS/s based on a non-binary digital-to-analog converter (DAC) for settling error correction. In the proposed DAC, a non-binary-weighted structure with redundancy is employed for the upper 8-bit capacitor array to reduce the residual voltage settling time requirement, facilitating high-speed operation. The remaining 3-bit capacitor array is composed of three unit capacitors, which are attached to the fractional reference voltages generated from a resistor string (R-string). The proposed partially monotonic switching scheme reduces the switching power consumption and the common-mode voltage variations of the DAC output voltage. The proposed 3D-encapsulated capacitor layout reduces the interference of adjacent signals while securing the high linearity of capacitors. Implemented in a 28 nm CMOS, the proposed ADC consumes 1.67 mW of power with a 1.0 V supply voltage and occupies an active area of 0.026 mm 2","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"30 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83317392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of an Approximate Adder based on Modified Full Adder and Nonzero Truncation for Machine Learning 基于改进全加法器和非零截断的近似加法器设计
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-04-30 DOI: 10.5573/jsts.2023.23.2.138
Hyoju Seo, Hyelin Seok, Jungwon Lee, Youngsun Han, Yongtae Kim
{"title":"Design of an Approximate Adder based on Modified Full Adder and Nonzero Truncation for Machine Learning","authors":"Hyoju Seo, Hyelin Seok, Jungwon Lee, Youngsun Han, Yongtae Kim","doi":"10.5573/jsts.2023.23.2.138","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.2.138","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"423 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78765654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Power RF Interface of the Near-field Communications Tag IC for Sensors 传感器近场通信标签IC的低功率射频接口
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-04-30 DOI: 10.5573/jsts.2023.23.2.112
In-Young Lee, D. Im
{"title":"Low Power RF Interface of the Near-field Communications Tag IC for Sensors","authors":"In-Young Lee, D. Im","doi":"10.5573/jsts.2023.23.2.112","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.2.112","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"1 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90988594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Review of Short-circuit Protection Circuits for SiC MOSFETs SiC mosfet短路保护电路研究进展
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-04-30 DOI: 10.5573/jsts.2023.23.2.128
Seungjik Lee, O. Lee, I. Nam
{"title":"Review of Short-circuit Protection Circuits for SiC MOSFETs","authors":"Seungjik Lee, O. Lee, I. Nam","doi":"10.5573/jsts.2023.23.2.128","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.2.128","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"45 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75269423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Simple Timing-skew Calibration using Flip-flops for Time-interleaved ADCs 用触发器对时间交错adc进行简单的时序倾斜校准
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-04-30 DOI: 10.5573/jsts.2023.23.2.89
Ji-Hun Lim, Sang-Gyu Park
{"title":"A Simple Timing-skew Calibration using Flip-flops for Time-interleaved ADCs","authors":"Ji-Hun Lim, Sang-Gyu Park","doi":"10.5573/jsts.2023.23.2.89","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.2.89","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"1 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73415785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Low-power DRAM Controller ASIC with a 36% Reduction in Average Active Power by Increasing On-die Termination Resistance 一种低功耗DRAM控制器ASIC，通过增加片上终止电阻使平均有功功率降低36%
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-04-30 DOI: 10.5573/jsts.2023.23.2.98
Won-Cheol Lee, Ho-Jun Kim, Hong-June Park
{"title":"A Low-power DRAM Controller ASIC with a 36% Reduction in Average Active Power by Increasing On-die Termination Resistance","authors":"Won-Cheol Lee, Ho-Jun Kim, Hong-June Park","doi":"10.5573/jsts.2023.23.2.98","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.2.98","url":null,"abstract":"—A low-power DRAM controller ASIC is proposed for point-to-point interconnects such as deep learning applications. The termination resistance of the DRAM controller is increased to 160 Ω and infinity during the write and read modes, respectively, to reduce power consumption with no transmission errors. Short-reach interconnects of 25 mm DQ/DQS lines are used to avoid signal integrity issues. The proposed DRAM controller is implemented in a 65 nm process with an active area of 1.64 mm 2 , 16 DQ 8 Gb configuration, and a data rate of 800 Mbps per DQ pin. The DRAM interface using the proposed controller and a commercial DDR3 DRAM chip consumes 379 mW on average; this is 64% of the power with the default termination of the JEDEC standard. Derived equations for the TX and RX current of the DRAM interface reveals that the TX current of a clock signal is minimized when the time of flight of the PCB channel is integer multiples of the half period of the clock signal with large TX and RX terminations.","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"159 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74085555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si 基于多晶硅的多纳米片隧道场效应晶体管的电性能与晶界位置的关系
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-02-28 DOI: 10.5573/jsts.2023.23.1.8
G. Kang, I. Kang, Sang-Ho Lee, Jin Park, S. Min, G. Kim, J. Heo, Jaewon Jang, J. Bae, Sin‐Hyung Lee
{"title":"Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si","authors":"G. Kang, I. Kang, Sang-Ho Lee, Jin Park, S. Min, G. Kim, J. Heo, Jaewon Jang, J. Bae, Sin‐Hyung Lee","doi":"10.5573/jsts.2023.23.1.8","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.1.8","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"6 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85868611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 0.9 - 1.5 GHz CMOS UWB Radar IC for Through the Wall Human Detection 一种用于穿墙人体检测的0.9 - 1.5 GHz CMOS超宽带雷达IC
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-02-28 DOI: 10.5573/jsts.2023.23.1.56
B. Seo, Gu Jung, Sunghun Jung, Dong-Min Seol, Sungmoon Chung, Y. Eo
{"title":"A 0.9 - 1.5 GHz CMOS UWB Radar IC for Through the Wall Human Detection","authors":"B. Seo, Gu Jung, Sunghun Jung, Dong-Min Seol, Sungmoon Chung, Y. Eo","doi":"10.5573/jsts.2023.23.1.56","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.1.56","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"27 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85518549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Organic Thin-film Transistors on a Biocompatible Parylene-C Substrate 生物相容性聚苯二烯- c衬底上有机薄膜晶体管的研制
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2023-02-28 DOI: 10.5573/jsts.2023.23.1.1
K. Kim, Sookyeong Kim, Ah-Hyun Hong, Yoojeong Ko, Hyowon Jang, Hyeok-Don Kim, Dong-Wook Park
{"title":"Development of Organic Thin-film Transistors on a Biocompatible Parylene-C Substrate","authors":"K. Kim, Sookyeong Kim, Ah-Hyun Hong, Yoojeong Ko, Hyowon Jang, Hyeok-Don Kim, Dong-Wook Park","doi":"10.5573/jsts.2023.23.1.1","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.1.1","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"196 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76030346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信