Journal of Semiconductor Technology and Science

Journal of Semiconductor Technology and Science
期刊缩写:
J SEMICOND TECH SCI
影响因子:
0.5
ISSN:
print: 1598-1657
研究领域:
ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
h-index:
15
自引率:
0.00%
Gold OA文章占比:
0.00%
原创研究文献占比:
92.16%
SCI收录类型:
Science Citation Index Expanded (SCIE) || Scopus (CiteScore)
期刊介绍英文:
Journal of Semiconductor Technology and Science is published to provide a forum for R&D people involved in every aspect of the integrated circuit technology, i.e., VLSI fabrication process technology, VLSI device technology, VLSI circuit design and other novel applications of this mass production technology. When IC was invented, these people worked together in one place. However, as the field of IC expanded, our individual knowledge became narrower, creating different branches in the technical society, which has made it more difficult to communicate as a whole. The fisherman, however, always knows that he can capture more fish at the border where warm and cold-water meet. Thus, we decided to go backwards gathering people involved in all VLSI technology in one place.
CiteScore:
CiteScoreSJRSNIPCiteScore排名
0.90.1810.216
学科
排名
百分位
大类:Engineering
小类:Electrical and Electronic Engineering
654 / 797
18%
大类:Materials Science
小类:Electronic, Optical and Magnetic Materials
248 / 284
12%
发文信息
中科院SCI期刊分区
大类 小类 TOP期刊 综述期刊
4区 工程技术
4区 工程:电子与电气 ENGINEERING, ELECTRICAL & ELECTRONIC
4区 物理:应用 PHYSICS, APPLIED
WOS期刊分区
学科分类
Q4ENGINEERING, ELECTRICAL & ELECTRONIC
Q4PHYSICS, APPLIED
历年影响因子
2015年0.4670
2016年0.5150
2017年0.3740
2018年0.4070
2019年0.3640
2020年0.4740
2021年0.5610
2022年0.4000
2023年0.5000
历年发表
2012年55
2013年82
2014年103
2015年99
2016年107
2017年103
2018年95
2019年78
2020年70
2021年60
2022年40
投稿信息
出版语言:
English
出版国家(地区):
SOUTH KOREA
审稿时长:
6-12 weeks
出版商:
Institute of Electronics Engineers of Korea
编辑部地址:
RM #907 SCIENCE & TECHNOLOGY NEW BLDG, 635-4 YUCKSAM-DONG, SEOUL, SOUTH KOREA, KANGNAM-KU, 135-703

Journal of Semiconductor Technology and Science - 最新文献

Interfacial Trap-based 1-row Hammer Analysis of BCAT and Nitride Layer BCAT Structures in Dynamic Random Access Memory

Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.18 Chang-Young Lim, Yeon-Seok Kim, Min-Woo Kwon

Analysis of High Temperature Characteristics of Double Gate Feedback Field Effect Transistor

Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.33 Myeongho Park, Kichan Kim, Seungyeon Oh, Il-Hwan Cho

A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array

Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.47 Seongjae Cho, Sung-Tae Lee, Soomin Kim, Hyungcheol Shin
查看全部
免责声明:
本页显示期刊或杂志信息,仅供参考学习,不是任何期刊杂志官网,不涉及出版事务,特此申明。如需出版一切事务需要用户自己向出版商联系核实。若本页展示内容有任何问题,请联系我们,邮箱:info@booksci.cn,我们会认真核实处理。
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信