Journal of Physics D: Applied Physics最新文献_第7页

A high-performance microwave plasma source employing dielectric wedges 采用介质楔的高性能微波等离子体源

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad7148

Fengming Yang, Wencong Zhang, Kama Huang, Yang Yang, Huacheng Zhu

{"title":"A high-performance microwave plasma source employing dielectric wedges","authors":"Fengming Yang, Wencong Zhang, Kama Huang, Yang Yang, Huacheng Zhu","doi":"10.1088/1361-6463/ad7148","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7148","url":null,"abstract":"The microwave-to-plasma energy conversion efficiency and the ease of plasma self-ignition are critical factors affecting the applications for microwave plasma sources (MPSs). This study presents a novel MPS utilizing dielectric wedges for self-ignition and improved energy conversion. Firstly, we crafted a dielectric wedge with a gradient refractive index, guiding the electric field from air to dielectric materials and facilitating microwave propagation along the dielectric in a waveguide. Through electromagnetic simulation, we explored how the size and permittivity of the dielectric wedge affect the electric field distribution. Then, the MPS based on the dielectric wedge was designed. In this configuration, a dielectric tube encloses the discharge tube, connecting to dielectric wedges to guide electromagnetic waves to the plasma. We analyzed the MPS performance using the Drude model, evaluating microwave energy conversion efficiency across various electron densities and collision frequencies. The results were compared with a commonly used MPS based on a tapered waveguide, demonstrating the proposed MPS has wider applicability across different operation conditions. Finally, experiments under low pressures were conducted using various gases, showing an average energy conversion efficiency of approximately 40% higher than the tapered waveguide MPS. The experiments also indicate the proposed MPS has a greater capability of self-ignition at lower power levels. These findings highlight the efficacy of incorporating dielectric wedges to enhance MPS performance, making it conducive for broader industrial applications.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"438 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation study on electrical tree propagation under electrical and mechanical stresses 电气和机械应力下电气树传播的模拟研究

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad7152

Hucheng Liang, Boxue Du

{"title":"Simulation study on electrical tree propagation under electrical and mechanical stresses","authors":"Hucheng Liang, Boxue Du","doi":"10.1088/1361-6463/ad7152","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7152","url":null,"abstract":"Epoxy insulators in gas-insulated power apparatus are subjected to the combined effects of electrical and mechanical loads. In this work, a simulation model is built based on the energy theory to explore the electrical tree growth of epoxy resin under tensile and compressive stresses. With increasing AC voltage, the electrical tree growth is promoted, exhibiting a morphology with more branches. Tensile stress accelerates the electrical tree growth, while proper compressive stress has the opposite effect. However, when the compressive stress exceeds a certain value, electrical tree growth is promoted again. When the mechanical stress is vertical to the needle electrode, these effects primarily impact the length of the trees. Conversely, in parallel cases, mechanical stress mainly affects the width of the electrical trees. Filler doping play the role of obstacles as well as enhancing the electric field concentration, the electrical tree growth is firstly inhibited and then promoted as the doping content increases. The electrical tree morphologies of simulation and experiment are in good consistency, proving the reasonability of the simulation model.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"22 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect characteristics of ANFs/SiO2 layer self-assembly on the insulation properties of aramid/epoxy composites ANFs/SiO2 层自组装对芳纶/环氧树脂复合材料绝缘性能的影响特征

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad714d

Jun Xie, Chengming Hu, Guowei Xia, Youzhi Zhang, Longyin Qiao, Bobin Xu, Xiaoyu Shi, Qing Xie

{"title":"Effect characteristics of ANFs/SiO2 layer self-assembly on the insulation properties of aramid/epoxy composites","authors":"Jun Xie, Chengming Hu, Guowei Xia, Youzhi Zhang, Longyin Qiao, Bobin Xu, Xiaoyu Shi, Qing Xie","doi":"10.1088/1361-6463/ad714d","DOIUrl":"https://doi.org/10.1088/1361-6463/ad714d","url":null,"abstract":"Aramid fiber (AF)-reinforced epoxy (EP) resin composite materials are widely used in the application of insulation rod-reinforced components, but the adhesion performance between AFs and EP resin is poor, which easily leads to interfacial defects and even gradually develops into breakdown, flashover, and other faults. In this study, a simple, environmentally friendly, diverse, and highly designable layer-by-layer self-assembly modification method was adopted to assemble aramid nanofibers/SiO2 onto the surface of AFs. The modified AFs were then used to produce composite materials with EP resin. By testing the interface breakdown, flashover, and leakage current of the AF/EP resin composite materials, the influence mechanism of AF surface modification on the material interface insulation performance was studied. The results show that the insulation performance of the modified composite material first increases and then decreases with the increase in the number of assembled layers, with the maximum increase in breakdown voltage being 93.56% and the maximum increase in flashover voltage being 30.91%.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"61 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions 哈夫纳铁电隧道结的机理、特性和应用的最新进展

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad7036

Eunjin Lim, Dahye Kim, Jongmin Park, Minsuk Koo, Sungjun Kim

{"title":"Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions","authors":"Eunjin Lim, Dahye Kim, Jongmin Park, Minsuk Koo, Sungjun Kim","doi":"10.1088/1361-6463/ad7036","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7036","url":null,"abstract":"The increasing demand of information and communication technology has pushed conventional computing paradigm to its limit. In addition, physical and technological factors have constrained the advancement of conventional memory devices. Considering the rapid back-and-forth transfer of a large amount of information, emerging memory should demonstrate space efficiency, fast speed, and low-cost requirements. Accordingly, ferroelectric films based on HfO<italic toggle=\"yes\">x</italic> are being intensively researched owing to their high energy efficiency and compatibility with complementary metal oxide semiconductor. Particularly, owing to the simplicity of their structure, low power, and less variation, hafnia-based ferroelectric tunnel junctions (FTJs) stand out among ferroelectric memories. Numerous studies have demonstrated the improved ferroelectricity of FTJs using various engineering methods, including doping, annealing, and varying electrodes. To improve the properties of HfO<italic toggle=\"yes\">x</italic>-based FTJs and enhance their applications, it is necessary to organize and discuss recent studies and prospects. Therefore, this paper reviews in-depth and comprehensive studies on FTJs and their advantages compared to other emerging devices. Additionally, in-memory computing applications, outlook, and challenges of hafnia-based FTJs are presented.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"29 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Properties of a continuous optical discharge sustained by short-wave infrared laser radiation in high pressure argon 高压氩气中短波红外激光辐射持续光放电的特性

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad6f23

V N Androsenko, M A Kotov, N G Solovyov, A N Shemyakin, M Yu Yakimov

{"title":"Properties of a continuous optical discharge sustained by short-wave infrared laser radiation in high pressure argon","authors":"V N Androsenko, M A Kotov, N G Solovyov, A N Shemyakin, M Yu Yakimov","doi":"10.1088/1361-6463/ad6f23","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6f23","url":null,"abstract":"This paper is devoted to the experimental study of the characteristics of a continuous optical discharge (COD) sustained by high power continuous wave laser radiation at a wavelength <italic toggle=\"yes\">λ</italic> = 1.08 <italic toggle=\"yes\">μ</italic>m in high pressure argon. New data on the COD threshold laser power dependence of argon pressure in the range 20–50 bar is obtained. The COD threshold laser power is shown to be in good agreement with the data obtained by other authors and theoretical evaluations provided the contribution of plasma energy loss due to thermal radiation is taken into account properly. The maximum plasma temperature was estimated to be 20–21 kk or higher, favorable to obtain high UV spectral radiance. A study of the convective plume oscillations around COD in argon has been carried out. It is found that in the pressure range 25–35 bars the growth of the laser radiation power leads to a decrease in convection oscillation frequency from 33 to 29 Hz, while the radius of the convective plume grows accordingly. The oscillation frequency ν and characteristic radius of the convective plume <italic toggle=\"yes\">r</italic>0 were found to obey the similarity relation <inline-formula>\u0000<tex-math><?CDATA $nu = 0.5sqrt {{g mathord{left/ {vphantom {g {2{r_0}}}} right. } {2{r_0}}}} $?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:mi>ν</mml:mi><mml:mo>=</mml:mo><mml:mn>0.5</mml:mn><mml:msqrt><mml:mrow><mml:mi>g</mml:mi><mml:mrow><mml:mo>/</mml:mo></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mrow><mml:msub><mml:mi>r</mml:mi><mml:mn>0</mml:mn></mml:msub></mml:mrow></mml:mrow></mml:mrow></mml:msqrt></mml:mrow></mml:math><inline-graphic xlink:href=\"dad6f23ieqn1.gif\"></inline-graphic></inline-formula> previously established in experiments with COD in xenon. These results are promising for using COD in argon as a high brightness broadband UV radiation source.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of plasma process-induced mechanical property change in SiN films using a cyclic nanoindentation technique 利用循环纳米压痕技术评估等离子工艺诱导的氮化硅薄膜机械性能变化

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad6faf

Takahiro Goya, Keiichiro Urabe, Koji Eriguchi

{"title":"Evaluation of plasma process-induced mechanical property change in SiN films using a cyclic nanoindentation technique","authors":"Takahiro Goya, Keiichiro Urabe, Koji Eriguchi","doi":"10.1088/1361-6463/ad6faf","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6faf","url":null,"abstract":"Recently, plasma process-induced damage (PID) has garnered significant interest in the design of thin dielectric films implemented in semiconductor devices. Silicon nitride (SiN) films, a material of interest in strain engineering, are found to suffer from PID because they are exposed to various plasmas during device manufacturing processes. Only a limited amount of experimental evidence is available at present regarding plasma-induced mechanical property changes of SiN films. In this study, we investigated the mechanical property change in SiN and SiO2 films using a cyclic nanoindentation technique. We focused on the contact stiffness (<italic toggle=\"yes\">S</italic>) as the principal mechanical property parameter. Firstly, a single loading/unloading test confirmed an increase in <italic toggle=\"yes\">S</italic> after Ar and He plasma exposures. Subsequently, we examined the time-dependent features of damaged SiN and SiO2 films under cyclic loading/unloading. From the cyclic test, an increase in <italic toggle=\"yes\">S</italic> was seen with the number of loading/unloading cycles (<italic toggle=\"yes\">N</italic>) for both SiN and SiO2 films. A larger increase in <italic toggle=\"yes\">S</italic> was observed for the damaged SiN, while no significant increase was seen for the damaged SiO2 films. The observed increase in <italic toggle=\"yes\">S</italic> and its time dependence are attributed to the strain developed by the created defects (e.g. interstitial species) and the reconstruction and stabilization of plasma-damaged Si–N networks with created defects, respectively. The time-dependent <italic toggle=\"yes\">S</italic> analysis under cyclic loading/unloading is useful for evaluating the effects of PID on the mechanical properties of thin films.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"7 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large-area gapped edge states in a valley photonic crystal heterostructure 山谷光子晶体异质结构中的大面积间隙边缘态

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad714a

Meize Li, Yahong Liu, Xin Zhou, Lianlian Du, Peng Li, Liyun Tao, Kun Song, Zhenfei Li, Xiaopeng Zhao

引用次数: 0

Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs 界面缺陷在 InGaN/GaN LED 光衰减中作用的研究与建模

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad7039

Nicola Roccato, Francesco Piva, Matteo Buffolo, Carlo De Santi, Nicola Trivellin, Camille Haller, Jean-François Carlin, Nicolas Grandjean, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

引用次数: 0

Rational design of the 6e thiolate-protected Au24(SR)18 nanocluster 6e 硫醇保护 Au24(SR)18 纳米簇的合理设计

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad6fac

Hongsheng Zhai, Man Liu, Endong Wang, Yufang Liu

{"title":"Rational design of the 6e thiolate-protected Au24(SR)18 nanocluster","authors":"Hongsheng Zhai, Man Liu, Endong Wang, Yufang Liu","doi":"10.1088/1361-6463/ad6fac","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6fac","url":null,"abstract":"The growth mechanism of thiolate-protected gold nanoclusters (AuNCs) has been advanced, but precise crystal structure information is lacking. Recent mass spectrometry and nuclear magnetic resonance analysis experiments traced the Au24(SR)18 cluster as a non-negligible byproduct intermediate during the reaction between [Au25(SR)18]−, the flagship cluster of the remarkable nanocluster ship, and Au25(SR)19, a cluster with 25 Au atoms but featuring a completely different structure than the [Au25(SR)18]− cluster. However, the precise structure of the Au24(SR)18 cluster is unknown. In this study, a total of seven Au24(SR)18 isomers were constructed using the grand unified model. Density functional theory calculations demonstrated that two of them could be considered quasi-degenerate suggesting that both might coexist in experiments. Geometrical features, electronic structures, and absorption spectra were calculated for potential future comparisons. This work contributes to fully interpreting the growth mechanism of AuNCs .","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"22 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-frequency performance in nanoscale vacuum channel transistors with gate-cathode height difference 具有栅极-阴极高度差的纳米级真空沟道晶体管的高频性能

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad70c2

Yuezhong Chen, Xin Zhai, Congyuan Lin, Ziyang Liu, Xiaobing Zhang, Ji Xu

{"title":"High-frequency performance in nanoscale vacuum channel transistors with gate-cathode height difference","authors":"Yuezhong Chen, Xin Zhai, Congyuan Lin, Ziyang Liu, Xiaobing Zhang, Ji Xu","doi":"10.1088/1361-6463/ad70c2","DOIUrl":"https://doi.org/10.1088/1361-6463/ad70c2","url":null,"abstract":"Nanoscale vacuum channel transistors (NVCTs) have garnered considerable interest due to their outstanding high frequency characteristics and high reliability, stemming from a distinct carrier transport mechanism compared to solid-state devices. Electrons traverse the nanoscale vacuum channel through scattering-free ballistic transport. However, existing research has predominantly focused on the structural design and optimization of NVCTs, with relatively few studies delving into their high frequency performance. Hence, alongside structural exploration and optimizing, investigating the high-frequency characteristics of NVCTs assumes particular importance. In this study, a novel NVCTs with a gate-cathode height difference structure was proposed and its electrical characteristics were simulated. Simulation results reveal that the presence of gate-cathode height difference effectively enhance the DC characteristics of NVCTs. Moreover, high frequency simulation demonstrate that the proposed device can operate frequency exceeding 1 THz. Whitin the GHz and even terahertz (THz) range, NVCTs exhibits exceptional high frequency properties, including ultrafast response times and minimal distortion. These findings not only offer insights for future structural design and optimization of NVCTs but also underscore the potential of NVCTs in radio frequency and THz applications.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"4 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0