Journal of Physics D: Applied Physics最新文献_第8页

Impedance matching design for capacitively coupled plasmas considering coaxial cables 考虑同轴电缆的电容耦合等离子体阻抗匹配设计

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-29 DOI: 10.1088/1361-6463/ad7151

Shimin Yu, Zili Chen, Jingwen Xu, Hongyu Wang, Lu Wang, Zhijiang Wang, Wei Jiang, Julian Schulze, Ya Zhang

{"title":"Impedance matching design for capacitively coupled plasmas considering coaxial cables","authors":"Shimin Yu, Zili Chen, Jingwen Xu, Hongyu Wang, Lu Wang, Zhijiang Wang, Wei Jiang, Julian Schulze, Ya Zhang","doi":"10.1088/1361-6463/ad7151","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7151","url":null,"abstract":"Capacitively coupled plasmas (CCPs) are widely used in plasma processing applications, where efficient power coupling between the radio frequency (RF) source and the plasma is crucial. In practical CCP systems, impedance matching networks (IMNs) are employed to minimize power reflection. However, the presence of coaxial cables can significantly impact plasma impedance and matching performance. We develop a comprehensive simulation framework for the IMN design of CCPs, fully considering the effects of RF coaxial cables. The model self-consistently couples a distributed transmission line (TL) model, a lumped-element circuit model, and an electrostatic particle-in-cell model. This coupled model is used to investigate the impact of coaxial cables on matching performance under various discharge conditions and cable configurations. The simulation results indicate that the optimal power transmission efficiency was achieved after 6 matching iterations. The power coupled to the CCP increased from 2.7 W before matching to 180.9 W, and the reflection coefficient ultimately decreased to 0.003. The results also reveal that neglecting the cables will lead to a decrease in the power dissipated in the CCP. The proposed method demonstrates effectiveness in achieving impedance matching for different gas pressures (75–300 mTorr) and cable lengths. It can be concluded that the matching speed is faster for an appropriate cable length. This work provides valuable insights into the role of TLs in CCP impedance matching and offers a practical tool for optimizing power delivery in realistic CCP systems with RF coaxial cables.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"13 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory 多层 Ge8Sb92/Ge2Sb2Te5 薄膜：为相变随机存取存储器揭示不同的电阻状态并提高性能

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-08 DOI: 10.1088/1361-6463/ad6a25

Liu Liu, Anding Li, Yukun Chen, Ruirui Liu, Jiayue Xu, Jiwei Zhai, Zhitang Song and Sannian Song

{"title":"Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory","authors":"Liu Liu, Anding Li, Yukun Chen, Ruirui Liu, Jiayue Xu, Jiwei Zhai, Zhitang Song and Sannian Song","doi":"10.1088/1361-6463/ad6a25","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6a25","url":null,"abstract":"This study investigates the phase-change properties of [Ge8Sb92 (25 nm)-Ge2Sb2Te5 (25 nm)]1 multilayer thin films, elucidating three distinct resistance states originating from two structural transitions: initial Sb precipitation and Ge2Sb2Te5-FCC crystallization, followed by Ge2Sb2Te5-FCC to Ge2Sb2Te5-HEX transformation with additional Sb precipitation. The phase transitions induce two abrupt changes in resistance at temperatures of 169.8 °C and 197.7 °C, respectively, with corresponding data retention temperatures of 97 °C and 129 °C, indicating robust thermal stability. The [Ge8Sb92 (25 nm)-Ge2Sb2Te5 (25 nm)]1-based phase change random access memory (PCRAM) device demonstrates reversible switching characteristics and multi-level storage capabilities within 20 ns, showcasing enhanced phase-change speed and storage density. In summary, [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1 demonstrates enhanced thermal stability, swift phase transition, and increased storage density relative to conventional Ge2Sb2Te5, establishing it as a promising new phase-change material for PCRAM applications.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"61 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm2 V−1 s−1) and low thermal budget (200 °C) 具有高场效应迁移率（128.3 cm2 V-1 s-1）和低热预算（200 °C ）的钝化氧化铟薄膜晶体管

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-08 DOI: 10.1088/1361-6463/ad6a23

Na Xiao, Vishal Khandelwal, Saravanan Yuvaraja, Dhanu Chettri, Genesh Mainali, Zhiyuan Liu, Mohamed Ben Hassine, Xiao Tang and Xiaohang Li

{"title":"Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm2 V−1 s−1) and low thermal budget (200 °C)","authors":"Na Xiao, Vishal Khandelwal, Saravanan Yuvaraja, Dhanu Chettri, Genesh Mainali, Zhiyuan Liu, Mohamed Ben Hassine, Xiao Tang and Xiaohang Li","doi":"10.1088/1361-6463/ad6a23","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6a23","url":null,"abstract":"Here, we demonstrate a high-mobility indium oxide (In2O3) thin-film transistor (TFT) with a sputtered alumina (Al2O3) passivation layer (PVL) with a low thermal budget (200 °C). The sputtering process of the Al2O3 PVL plays a positive role in improving the field-effect mobility (µFE) and current on/off ratio (ION/IOFF) performance of the In2O3 TFTs. However, these enhancements are limited due to the high density of intrinsic trap defects in the In2O3 channels, as reflected in their large hysteresis and poor bias stability. Treating the In2O3 channel with oxygen (O2) plasma prior to sputtering the Al2O3 PVL results in notable improvements. Specifically, a high µFE of 128.3 cm2V−1 s−1, a high ION/IOFF over 106 at VDS of 0.1 V, a small hysteresis of 0.03 V, and a negligible threshold voltage shift under negative bias stress are achieved in the passivated In2O3 TFT (with O2 plasma pretreatment), representing a significant improvement compared to the passivated In2O3 TFT (without O2 plasma pretreatment) and the unpassivated In2O3 TFT. The remarkable reduction of intrinsic trap defects in the passivated In2O3 TFT compensated by O2 plasma is the primary mechanism underlying the improvement in µFE and bias stability, as validated by x-ray photoelectron spectra, hysteresis analysis, and temperature-stress electrical characterizations. Plasma treatment effectively compensates for intrinsic trap defects in oxide semiconductor (OS) channels, when combined with sputter passivation, resulting in a significant enhancement of the overall performance of OS TFTs under low thermal budgets. This approach offers valuable insights into advancing OS TFTs with satisfactory driving capability and wide applicability.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"25 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband optically transparent microwave absorber made of interdigital metasurfaces in rotational symmetry with a single air spacer 宽带光学透明微波吸收器，由旋转对称的数字间元表面和单个空气隔板组成

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-08 DOI: 10.1088/1361-6463/ad6a24

Longxin Wan, Xiaofei Xu, Kun Duan and Junming Zhao

{"title":"Broadband optically transparent microwave absorber made of interdigital metasurfaces in rotational symmetry with a single air spacer","authors":"Longxin Wan, Xiaofei Xu, Kun Duan and Junming Zhao","doi":"10.1088/1361-6463/ad6a24","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6a24","url":null,"abstract":"A broadband optically transparent metasurface microwave absorber (MMA) is designed and experimentally studied. The MMA is made of two indium tin oxide (ITO) resistive films deposited on two transparent polyethylene terephthalate substrates respectively, between which is sandwiched a single air spacer. The top ITO resistive film is etched with periodic interdigital metasurface patterns in rotational symmetry, while the bottom ITO resistive film is an integrated sheet with a low resistance working as the backplane. By carefully optimizing the functional interdigital metasurface structures in a numerical solver, a desirable 4-octave broadband MMA is achieved. The absorbing bandwidth is 4.53–18.71 GHz (122.03%) in the numerical predictions for the perpendicular incidence, in which the absorptivity is greater than 90%. Its total thickness is only 5.8 mm or 0.088λL, where λL is the wavelength (66.23 mm) at the lowest 4.53 GHz. The absorber is validated in experiments. Results are observed in good agreement with the simulated ones. The interdigital MMA is polarization-insensitive and able to operate for wide-angle incidences up to 45°. These properties are demonstrated in both simulations and experiments.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"56 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gap distance sensing for non-magnetic medium based on magnetoelectric effect under spatial separation condition 空间分离条件下基于磁电效应的非磁性介质间隙距离传感

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-08 DOI: 10.1088/1361-6463/ad6a21

Xiao Zhang, Tian Xia, Yahui Zhang, Yikun Yang and Bintang Yang

{"title":"Gap distance sensing for non-magnetic medium based on magnetoelectric effect under spatial separation condition","authors":"Xiao Zhang, Tian Xia, Yahui Zhang, Yikun Yang and Bintang Yang","doi":"10.1088/1361-6463/ad6a21","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6a21","url":null,"abstract":"This paper presents a novel non-contact spatial gap distance sensing (GDS) method that can provide distance information in spatial separation conditions. In many applications, such as enclosed environments, it could not provide the desired measurement of gap distance of internal non-magnetic medium due to the constraints of physical barriers and poor accessibility. Therefore, a non-invasive sensing system is designed to measure spatial gap distance for non-magnetic medium. The developed sensor system consists of a pair of heteropolar permanent magnets (PMs), a non-magnetic medium, a magnetostrictive-piezoelectric composite unit and an external space, which has the function of spatial separation measurement. By exploiting the magnetoelectric effect, the magneto-machine-electric conversion is achieved by sensing the spatial magnetic field generated by the heteropolar PMs. The coupling modeling, analysis and calibration of sensing system are conducted, and the system prototype is designed and manufactured. Additionally, the performances of the GDS are experimentally validated. Static gap distance (plate thickness) measurements of the plate and variable gap distance (instant water height) measurements of water are performed, and resolution, vibration, and drift tests are carried out. The results show the accuracy and stability of non-contact spatial gap distance detection for non-magnetic medium, highlighting its potential in various applications.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"18 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatiotemporal measurement of electron number density in high density laser-induced plasmas using laser absorption 利用激光吸收对高密度激光诱导等离子体中的电子数密度进行时空测量

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-08 DOI: 10.1088/1361-6463/ad6878

Kyunho Kim, Cheolwoo Bong and Moon Soo Bak

{"title":"Spatiotemporal measurement of electron number density in high density laser-induced plasmas using laser absorption","authors":"Kyunho Kim, Cheolwoo Bong and Moon Soo Bak","doi":"10.1088/1361-6463/ad6878","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6878","url":null,"abstract":"Laser absorption measurements were conducted on a high-density, laser-induced plasma produced in atmospheric-pressure air to investigate the spatiotemporal evolution of its electron number density. Measurements taken both along and perpendicular to the plasma’s symmetric axis showed that, upon formation, the plasma propagates in the direction opposite to the laser beam used for plasma generation, while expanding rapidly radially. The spatiotemporal evolution of the electron density was further analyzed from the measurements taken perpendicular to the plasma’s symmetric axis through tomographic reconstruction. Notably, the reconstruction was achieved using a genetic algorithm, as a probe laser beam used for absorption measurement is non-negligible in size compared to the plasma. Importantly, our measurements could reveal that the electron density reaches 4.99 × 1019 cm−3 immediately after the plasma formation at the center; moreover, there is a development of a pressure wave with high electron density, propagating outward radially due to the rapid expansion of the produced plasma.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"6 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature 优化硅异质结太阳能电池中的电荷传输和带偏移：TiO2 接触沉积温度的影响

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-08 DOI: 10.1088/1361-6463/ad6999

Anand Pandey, Tarun Kumar, Arnab Mondal and Ankush Bag

{"title":"Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature","authors":"Anand Pandey, Tarun Kumar, Arnab Mondal and Ankush Bag","doi":"10.1088/1361-6463/ad6999","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6999","url":null,"abstract":"Carrier selective contacts are a primary requirement for fabricating silicon heterojunction solar cells (SHSCs). TiO2 is a prominent carrier selective contact in SHSCs owing to its excellent optoelectronic features such as suitable band offset, work function, and cost-effectiveness. Herein, we fabricated simple SHSCs in an Al/TiO2/p-Si/Ti/Au device configuration. Ultrathin 3 nm TiO2 layers were deposited onto a p-type silicon substrate using the atomic layer deposition method. The deposition temperature of TiO2 layers varied from 100 °C to 250 °C. X-ray photoelectron spectroscopic studies suggest that deposition temperature highly affects the chemical states of TiO2 and reduces the formation of defective state densities at the Fermi energy. The optical band gap values of TiO2 layers are also altered from 3.13 eV to 3.27 eV when the deposition temperature increases. The work function tuning from −5.13 eV to −4.83 eV has also been observed in TiO2 layers, suggesting the variation in Fermi level tuning, which arises due to changes in carrier concentrations at higher temperatures. Several device parameters, such as ideality factor, trap density, reverse saturation current density, barrier height, etc, have been quantified to comprehend the effects of deposition temperature on photovoltaic device performance. The results suggest that the deposition temperature significantly influences the charge transport and device performance. At an optimum temperature, a significant reduction in charge carrier recombination and trap state density has been observed, which helps to improve power conversion efficiency.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"23 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Anhysteretic strains in ferroelectric ceramics under electromechanical loading 铁电陶瓷在机电加载下的非静电应变

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-08 DOI: 10.1088/1361-6463/ad6a22

Chaimae Babori, Mahmoud Barati, Valentin Segouin, Romain Corcolle and Laurent Daniel

{"title":"Anhysteretic strains in ferroelectric ceramics under electromechanical loading","authors":"Chaimae Babori, Mahmoud Barati, Valentin Segouin, Romain Corcolle and Laurent Daniel","doi":"10.1088/1361-6463/ad6a22","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6a22","url":null,"abstract":"This study investigates anhysteretic strains in PZT ceramics. The anhysteretic curves are associated with a stable balanced state of polarization in the domain structure, excluding dissipative effects related to mechanisms such as domain wall pinning. Anhysteretic measurements are representative of an -ideal- scenario in which the material would undergo no energy loss due to dissipative processes, focusing on the stable and reversible aspects of the domain configuration. The different methodologies employed to measure deformations under electromechanical loading are presented, leading to the introduction of digital image correlation (DIC) as the chosen technique, recognized for its ability to capture detailed information on transverse and longitudinal strain. The article then describes a procedure developed to obtain anhysteretic strain and anhysteretic polarisation for different levels of compressive loadings. The subsequent presentation of the results of the transverse and longitudinal strain analyses provides valuable insights into the reversible and irreversible behavior of the material. They can be used as a basis for the thermodynamical modelling approaches grounded on separating reversible and irreversible contributions or as a validation of existing models describing anhysteretic behavior. The compressive stress affects both the shape of hysteretic and anhysteretic curves. The anhysteretic curve represents a stable equilibrium in the domain structure. Compressive stress reduces strain by affecting the pinning of domain walls. These points justify the interest in studying the effect of compressive stress on the anhysteretic behavior of ferroelectrics.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"34 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results 宽带隙半导体中的高级缺陷光谱学：回顾与最新成果

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-07 DOI: 10.1088/1361-6463/ad5b6c

Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini

{"title":"Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results","authors":"Manuel Fregolent, Francesco Piva, Matteo Buffolo, Carlo De Santi, Andrea Cester, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini","doi":"10.1088/1361-6463/ad5b6c","DOIUrl":"https://doi.org/10.1088/1361-6463/ad5b6c","url":null,"abstract":"The study of deep-level defects in semiconductors has always played a strategic role in the development of electronic and optoelectronic devices. Deep levels have a strong impact on many of the device properties, including efficiency, stability, and reliability, because they can drive several physical processes. Despite the advancements in crystal growth, wide- and ultrawide-bandgap semiconductors (such as gallium nitride and gallium oxide) are still strongly affected by the formation of defects that, in general, can act as carrier traps or generation-recombination centers (G-R). Conventional techniques used for deep-level analysis in silicon need to be adapted for identifying and characterizing defects in wide-bandgap materials. This topical review paper presents an overview of reviews of the theory of deep levels in semiconductors; in addition, we present a review and original results on the application, limits, and perspectives of two widely adopted common deep-level detection techniques, namely capacitance deep-level transient spectroscopy and deep-level optical spectroscopy, with specific focus on wide-bandgap semiconductors. Finally, the most common traps of GaN and β-Ga2O3 are reviewed.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"9 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of laser wavelength on ablation propulsion and plasma characteristics with acrylonitrile butadiene styrene target 激光波长对丙烯腈-丁二烯-苯乙烯靶烧蚀推进和等离子体特性的影响

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-08-07 DOI: 10.1088/1361-6463/ad6877

Yongfeng Xu, Liang Yang, Jiaqi Li, Dongjian Zhou, Qingwei Li, Wenbo Shi and Yuqi Jin

{"title":"Effect of laser wavelength on ablation propulsion and plasma characteristics with acrylonitrile butadiene styrene target","authors":"Yongfeng Xu, Liang Yang, Jiaqi Li, Dongjian Zhou, Qingwei Li, Wenbo Shi and Yuqi Jin","doi":"10.1088/1361-6463/ad6877","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6877","url":null,"abstract":"Propulsion performance produced by laser ablation of polymer made of acrylonitrile butadiene styrene is experimentally investigated using the first, second, and third harmonics of a Nd: YAG laser. A ballistic pendulum is employed to assess the impulse and coupling coefficient for laser propulsion application. Fast photography, target ablation, and optical emission spectroscopy are proposed to analyze the energy coupling characteristic. The impulse and coupling coefficient under different pressures are demonstrated to depend on the target ablation and plasma properties which are relevant to laser wavelength. As the laser wavelength decreases, the crater depth and ablation mass are enhanced. Meanwhile, the plasma plume separates at atmospheric pressure and its length extends continuously in the low-pressure range. As a result, plasma including more ejected particles with higher velocity contributes to obtaining excellent impulse and coupling coefficient. In addition, the decreased electron density and temperature indicate higher collision frequency and photoionization dominate rather than inverse bremsstrahlung absorption at shorter laser wavelengths. This work provides a better understanding of the energy conversion mechanism and a reference for improving propulsion performance.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"26 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141943605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0