Journal of Physics D: Applied Physics最新文献_第5页

Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor 通过调节半导体的形态显著改善法拉第结太阳能充电设备的光充电和暗放电电流

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-06 DOI: 10.1088/1361-6463/ad714f

Ziyi Wan, Dongjian Jiang, Yuzhan Zheng, Ye Fu, Xiao Sun, Bo Wang, Cuixia Cui, Changping Yao, Wenjun Luo, Zhigang Zou

引用次数: 0

Controllable dual resonances of Fano and EIT in a graphene-loaded all-dielectric GaAs metasurface and its sensing and slow-light applications 石墨烯负载全介电砷化镓超表面中的法诺和 EIT 可控双共振及其传感和慢光应用

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI: 10.1088/1361-6463/ad73e4

Zhichao Wang, Huahao Huang, Hui Zhang, Miao He, Weiren Zhao

{"title":"Controllable dual resonances of Fano and EIT in a graphene-loaded all-dielectric GaAs metasurface and its sensing and slow-light applications","authors":"Zhichao Wang, Huahao Huang, Hui Zhang, Miao He, Weiren Zhao","doi":"10.1088/1361-6463/ad73e4","DOIUrl":"https://doi.org/10.1088/1361-6463/ad73e4","url":null,"abstract":"Active nanophotonic metasurfaces have attracted considerable attention for their promise to develop compact, tunable optical metadevices with advanced functions. In this work, we theoretically demonstrated the dynamically controllable dual resonances of Fano and electromagnetically induced transparency (EIT) using a graphene-loaded all-dielectric metasurface with U-shaped gallium arsenide (GaAs) nanobars operating in the near-infrared region. The destructive interference between a subradiant mode (i.e. a dark mode) supported by two vertical GaAs bars and two radiative modes (i.e. two bright modes) supported by a horizontal GaAs nanobar gives rise to a Fano resonance and an EIT window with high transmission and a large quality factor (Q-factor) in the transmission spectrum. Importantly, the transmission amplitudes can be flexibly modulated by adjusting the graphene Fermi levels without rebuilding the nanostructures. This modulation results from the controllable light absorption by the loaded graphene monolayer due to its interband losses in the near-infrared spectrum. Furthermore, the peak wavelengths of the Fano resonance and EIT window with high Q-factors are highly sensitive to variations in the refractive index (RI) of the surrounding medium, giving the proposed metasurface a relatively good sensitivity of ∼700 nm RIU−1 and a high figure of merit of 280, making it an effective RI sensor. Additionally, the metasurface features an adjustable slow light effect, indicated by the adjusted group delay time ranging from 0.12 ps to 0.38 ps. Therefore, the metasurface system proposed in this work offers a viable platform for advanced multi-band optical sensing, low-loss slow light devices, switches, and potential applications in nonlinear optical fields.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"27 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Observation of Young’s double-slit phenomenon in anti-PT-symmetric electrical circuits 观测反PT对称电路中的杨氏双缝现象

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI: 10.1088/1361-6463/ad73e2

Keyu Pan, Xiumei Wang, Xizhou Shen, Haoyi Zhou, Xingping Zhou

引用次数: 0

EM optimization of microwave filter based on long short-term memory–feedforward neural network and transfer functions 基于长短期记忆前馈神经网络和传递函数的微波滤波器电磁优化

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI: 10.1088/1361-6463/ad6fb1

Xin Zhang, Jian Wu, Yong-Qiang Chai, Shui Liu, Yuan Peng

{"title":"EM optimization of microwave filter based on long short-term memory–feedforward neural network and transfer functions","authors":"Xin Zhang, Jian Wu, Yong-Qiang Chai, Shui Liu, Yuan Peng","doi":"10.1088/1361-6463/ad6fb1","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6fb1","url":null,"abstract":"An electromagnetic optimization technique based on a long short-term memory–feedforward neural network (LSTM-FNN) and transfer functions is proposed for microwave filter design. The proposed optimization method addresses the situation where a neuro-transfer function model repeatedly trains at each optimization iteration process. The proposed surrogate model combines the LSTM-FNN and polynomial model to map nonlinear relationships between geometric variables and transfer functions. Firstly, by combining the gate mechanism of LSTM with the high generalization ability of an FNN, the proposed LSTM-FNN effectively learns nonlinear relationships between geometric variables and frequency responses at specific frequencies. Secondly, the transfer functions can be accurately approximated via polynomial fitting. Frequency responses at any interesting frequency range can be accurately expressed using the transfer functions. Finally, the trained surrogate model, exploiting the trust-region algorithm, can accurately and efficiently achieve optimization convergence. An example of a low-pass filter (LPF) is adopted to validate the proposed optimization method.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"35 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reconfigurable THz leaky-wave antennas based on innovative metal–graphene metasurfaces 基于创新金属石墨烯元表面的可重构太赫兹漏波天线

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI: 10.1088/1361-6463/ad7302

Edoardo Negri, Walter Fuscaldo, Paolo Burghignoli, Alessandro Galli

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Mediating coherent acoustic phonon oscillation of a 2D semiconductor/3D dielectric heterostructure by interfacial engineering 通过界面工程调节二维半导体/三维电介质异质结构的相干声子振荡

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI: 10.1088/1361-6463/ad70c4

Wenxiong Xu, Feiyang Hou, He Zhang, Chuansheng Xia, Zhixuan Li, Yuanyuan Li, Chunxiang Xu, Qiannan Cui

{"title":"Mediating coherent acoustic phonon oscillation of a 2D semiconductor/3D dielectric heterostructure by interfacial engineering","authors":"Wenxiong Xu, Feiyang Hou, He Zhang, Chuansheng Xia, Zhixuan Li, Yuanyuan Li, Chunxiang Xu, Qiannan Cui","doi":"10.1088/1361-6463/ad70c4","DOIUrl":"https://doi.org/10.1088/1361-6463/ad70c4","url":null,"abstract":"Coherent acoustic phonon (CAP) oscillation of a 2D layered semiconductor/3D dielectric heterostructure generated by femtosecond laser pulse excitation can realize ultrafast photoacoustic conversion by emitting picosecond acoustic (PA) pulse; however, the photoacoustic conversion efficiency suffers from interfacial phonon scattering of simultaneously laser-induced lattice heat. Here, taking advantage of graphene’s high thermal conductivity and large acoustic impedance, we demonstrate that phonon scattering can be markedly mediated in a MoS2/graphene/glass heterostructure via femtosecond laser pump–probe measurements. The equilibrium temperatures of the MoS2 lattice have been cooled down by about 45%. As a benefit, both the lifetime of CAP oscillations and the pump pulse-picosecond acoustic pulse energy conversion efficiency have been enhanced by a factor of about 2. Our results offer insights into CAP and PA pulse manipulations via interfacial engineering that are fundamentally important for ultrafast photoacoustics based on 2D layered semiconductors.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"5 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing n-type doping in diamond by strain engineering 通过应变工程增强金刚石中的 n 型掺杂

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI: 10.1088/1361-6463/ad7270

Chunmin Cheng, Xiang Sun, Wei Shen, Qijun Wang, Lijie Li, Fang Dong, Kang Liang, Gai Wu

{"title":"Enhancing n-type doping in diamond by strain engineering","authors":"Chunmin Cheng, Xiang Sun, Wei Shen, Qijun Wang, Lijie Li, Fang Dong, Kang Liang, Gai Wu","doi":"10.1088/1361-6463/ad7270","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7270","url":null,"abstract":"The utilization of diamond, the ultimate semiconductor, in electronic devices is challenging due to the difficulty of n-type doping. Phosphorus (P)-doped diamond, the most prevalent type of n-type diamond, is still limited by the low solubility of P dopant and undesirable compensating defects such as vacancy defects and hydrogen incorporation. In order to overcome this limitation, strain engineering is introduced to the n-type P-doped diamond theoretically in this work. Uniaxial, equibiaxial, and hydrostatic triaxial strains are applied to the P-doped diamond. The formation energy, charge transition level, defect binding energy and other physical properties of the P-doped diamond are then calculated based on first-principles calculations. The results show that uniaxial, equibiaxial, and hydrostatic triaxial tensile strain can reduce the formation energy and the donor ionization energy of P dopant, and also reduce the binding energy of phosphorus–vacancy (PV) and phosphorus–hydrogen (PH) defects. Our results indicate that under tensile strain, the solubility of the P dopant and the n-type conductivity of the P-doped diamond can be increased, and the formation of compensating defects can be suppressed. Therefore, strain engineering is anticipated to be used to enhance the n-type characteristics of the P-doped diamond, facilitating its application in electronic devices.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"29 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect engineering strategies in monolayer VSe2 for enhanced hydrogen evolution reaction: a computational study 用于增强氢气进化反应的单层 VSe2 缺陷工程策略：计算研究

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI: 10.1088/1361-6463/ad73e3

Rabia Hassan, Fei Ma, Yan Li, Rehan Hassan

引用次数: 0

Label-free characterization of pathological changes in the portal area of liver fibrosis tissue using multiphoton imaging and quantitative image analysis 利用多光子成像和定量图像分析对肝纤维化组织门区病理变化进行无标记表征

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI: 10.1088/1361-6463/ad73e6

Xiong Zhang, Yuan-E Lian, XunBin Yu, Xingxin Huang, Zheng Zhang, Jingyi Zhang, Jianxin Chen, Lianhuang Li, Yannan Bai

{"title":"Label-free characterization of pathological changes in the portal area of liver fibrosis tissue using multiphoton imaging and quantitative image analysis","authors":"Xiong Zhang, Yuan-E Lian, XunBin Yu, Xingxin Huang, Zheng Zhang, Jingyi Zhang, Jianxin Chen, Lianhuang Li, Yannan Bai","doi":"10.1088/1361-6463/ad73e6","DOIUrl":"https://doi.org/10.1088/1361-6463/ad73e6","url":null,"abstract":"Liver fibrosis plays a crucial role in the progression of liver diseases and serves as a pivotal stage leading to the development of liver cirrhosis and cancer. It typically initiates from portal area with various pathological characteristics. In this article, we employed multiphoton microscopy (MPM) to characterize the pathological changes in the portal areas of liver fibrosis tissues, and subsequently, we used our developed image analysis method to extract eight collagen morphological features from MPM images and also combined a deep learning method with a cell nuclear feature extraction algorithm to perform automatic nuclei segmentation and quantitative analysis in the H&E-stained histopathology images of portal areas. Our results demonstrate that MPM can effectively identify various pathological features in portal areas, and there are significant differences in four collagen features (collagen proportionate area, number, length and width) between normal and abnormal portal areas and in four nuclear features (mean ratio of axial length, disorder of distance to 3, 5 and 7 nearest neighbors) between normal portal area, bile duct hyperplasia and periductal fibrosis. Therefore, a combination of MPM and image-based quantitative analysis may be considered as a rapid and effective means to monitor histopathological changes in portal area and offer new insights into liver fibrosis.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"5 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrically-driven IMT and volatile memristor behavior in NdNiO3 films NdNiO3 薄膜中的电驱动 IMT 和挥发性记忆晶体行为

IF 3.4 3区物理与天体物理

Journal of Physics D: Applied Physics Pub Date : 2024-09-04 DOI: 10.1088/1361-6463/ad714e

O D Schneble, I A Leahy, J D Zimmerman, M B Tellekamp

{"title":"Electrically-driven IMT and volatile memristor behavior in NdNiO3 films","authors":"O D Schneble, I A Leahy, J D Zimmerman, M B Tellekamp","doi":"10.1088/1361-6463/ad714e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad714e","url":null,"abstract":"Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration into filaments, volatile devices utilize a reversible phase change that returns to a ground state in the absence of applied stimulus. In these devices, Joule heating triggers the IMT and changes the bulk resistivity rather than influencing conduction through defects, as in previous studies. This volatile resistive switching behavior has previous been leveraged in niobium and vanadium oxides, but not in rare-earth nickelates, despite their tunable transition temperatures. This study demonstrates an electrically driven IMT in the prototypical rare-earth nickelate, NdNiO3, in large area devices. While previous work examining the electrically-driven IMT in NdNiO3 suggests defect-dominated conduction, this study shows clear s-type negative differential resistance (NDR) consistent with temperature-dependent resistivity measurements. The NDR peak-to-valley voltage scales linearly with temperature as expected for conductivity pathways dominated by bulk IMT behavior. Unlike other transition metal oxides, which are modeled using the insulator-metal phase fraction as the internal state variable, a thermoelectric model with temperature as the internal state variable is found to more accurately describe the current–voltage characteristic of NdNiO3 volatile memristors. Overall, we report the synthesis, fabrication, and characterization of NdNiO3 volatile memristors with resistivity dominated by bulk-like IMT behavior which is scalable and not dependent upon oxygen vacancy migration or defect mediated conduction pathways.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"7 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0