Journal of Physics D: Applied Physics最新文献

{"title":"A review on optical characterization of refractive index in photonic related devices and applications","authors":"Yan Zhou, Zizheng Cao and Shaohua Yu","doi":"10.1088/1361-6463/ad6ba0","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6ba0","url":null,"abstract":"As one of the most important optical properties of a material, refractive index (RI) and its spatial distribution play important roles in managing the performances of photonic structures and devices. The capability to accurately and reliably characterize RI can be crucial for precise control of specifications of photonic devices, and is required in diverse scenarios, ranging from material inspections, processing controls and device stage characterizations. In this review, we discuss a variety of optical characterization techniques for RI profiling and measurements, leveraging optical interference contrast effects, phase-shifting effects, as well as spectroscopic responses in reflectometric and ellipsometric manners. In addition, we give a quick account of recent progress on these techniques empowered by advanced data treatments.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasmon scattering at a junction in double-layer two-dimensional electron gas plasmonic waveguide","authors":"Hanghui Deng, Shengpeng Yang, Hongyang Guo, Zijian Qiu, Ping Zhang, Shaomeng Wang, Zhanliang Wang, Zhigang Lu, Yuan Zheng, Yubin Gong","doi":"10.1088/1361-6463/ad7472","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7472","url":null,"abstract":"The scattering of plasmons at a junction within a double-layer two-dimensional electron gas plasmonic waveguide is studied via a full electromagnetic method. The dispersion relation is derived by utilizing the transfer matrix method and can be extended to the situation of an arbitrary number of layers. By numerically solving the dispersion equations, both the acoustic and optical plasmon modes are identified in this double layer system, and the unstable plasmon modes arising from plasmon coupling in different layers are discussed elaborately. Subsequently, the total fields are expanded with eigenmodes and matched at the interface to analyze the scattering characteristics at the junction. The results indicate that the total power of the plasmon mode is amplified when the electron fluid flows from a high concentration region to a low concentration region, and the amplification is more evident at a higher drift velocity. Additionally, we address the scattering of unstable plasmons caused by the two-stream instability and find that the transmitted plasmons are excited intensively at the incidence of the growing plasmon, leading to the plasmon amplification. The detailed examination of plasmon scattering at junction is the prerequisite for studying more complex structures of terahertz plasmonic devices and comprehending the corresponding amplification mechanism.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and recent developments of MXene-based composites for photocatalytic hydrogen production","authors":"Yifan Liao, Xinglin Wang, Huajun Gu, Huihui Zhang, Jiayi Meng and Wei-Lin Dai","doi":"10.1088/1361-6463/ad7470","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7470","url":null,"abstract":"The energy crisis has already seriously affected the daily lives of people around the world. As a result, designing efficient catalysts for photocatalytic hydrogen evolution (PHE) is a promising strategy for energy supply. Co-catalyst modification can significantly enhance the photocatalytic activity of single semiconductors, overcoming limitations posed by their narrow visible light absorption range and high electron–hole recombination rate. MXene-based composites demonstrate immense potential as co-catalysts for photocatalytic hydrogen production owing to their distinctive two-dimensional layered structure and outstanding photoelectrochemical properties, and further research and development efforts surrounding MXene-based composites will contribute significantly to the progress of sustainable energy technologies. In this review, we offer a comprehensive overview of synthesis methods for MXene and MXene-based composites, highlight illustrative instances of binary and ternary MXene-based composites in PHE, and explore potential avenues for future research and expansion of MXene-based composites.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strategy to enhance the performance of spin field effect transistors-insert effective intermediate layer graphene","authors":"Tongtong Wang, Si-Cong Zhu, Fangqi Liu","doi":"10.1088/1361-6463/ad759e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad759e","url":null,"abstract":"Novel spin field effect transistors (FETs) with metal contacts are designed to reduce the high Schottky barrier height (SBH) due to Fermi pinning, reducing energy consumption and increasing their performance. Herein, we effectively enhance the conductivity (10⁶ orders of magnitude) and current threshold of the FETs by introducing interlayer graphene in the contact interface between the semiconductor blue phosphorus and the metal, thereby reducing the interlayer resistance. Electronic structure analysis shows that Blue Phosphorus–Graphene–Cu modulates the lowest SBH, yielding a larger FETs conductance compared to other metal systems. The spin injection further enhances the efficiency of FETs as rectifiers (enhanced 13%). This theoretical work provides rational guidance for realizing innovations in next-generation high-performance transistor technology, demonstrating the inherent potential of the regulatory mechanism.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photo- and exchange-field controlled spin and valley polarized transport in a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides","authors":"Shahla Hosseinzadeh Helaleh, Mohammad Alipourzadeh, Yaser Hajati","doi":"10.1088/1361-6463/ad70c3","DOIUrl":"https://doi.org/10.1088/1361-6463/ad70c3","url":null,"abstract":"We theoretically investigate spin- and valley-polarized transport within a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides (TMDs), under the influence of off-resonance circularly polarized light and gate voltage. Antiferromagnetism modulates spin states and the effective gap, reducing the spin gap for one state while increasing it for the opposite, resulting in a broad spin polarization and a controlled gap. Off-resonance circularly polarized light adjusts the valley degree of freedom and the effective gap, providing a wide range of valley polarization. Harnessing the strong spin–orbit coupling in TMDs enables perfect spin-valley polarization in the proposed junction across a wide range of Fermi energies through AF and/or off-resonance light manipulation. AF manipulation effectively narrows the band gap of TMDs at lower light energies, enhancing potential applications of the proposed junction for spin-valley filtering.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"AlN/ScAlN composite films-based spurious free A1 mode lamb wave resonator with adjustable effective electromechanical coupling coefficient","authors":"Zesheng Liu, Yan Liu, Xiang Chen, Ying Xie, Yuanhang Qu, Xiyu Gu, Xin Tong, Haiyang Li, Wenjuan Liu, Yao Cai, Shishang Guo, Chengliang Sun","doi":"10.1088/1361-6463/ad7150","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7150","url":null,"abstract":"Narrow-band filters are widely applied in the narrow-band Internet of Things (NB-IoT). To meet the diverse bandwidth requirements of NB-IoT applications, this work presents the first antisymmetric (A1) mode Lamb wave resonators (LWRs) based on aluminum nitride (AlN) and AlN/ScAlN composite films. The impact of structural parameters, including pitch (<italic toggle=\"yes\">P</italic>) and duty factor (DF), on main mode excitation and suppression of spurious modes is investigated. The optimal <italic toggle=\"yes\">P</italic> and DF are found to be 10 <italic toggle=\"yes\">μ</italic>m and 0.05, respectively. Based on spurious-free A1 LWRs, an AlN/Sc_0.096Al_0.904N composite film is utilized to adjust the effective electromechanical coupling coefficient <inline-formula>\u0000<tex-math><?CDATA $k_{{text{eff}}}^{text{2}}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msubsup><mml:mi>k</mml:mi><mml:mrow><mml:mrow><mml:mtext>eff</mml:mtext></mml:mrow></mml:mrow><mml:mrow><mml:mtext>2</mml:mtext></mml:mrow></mml:msubsup></mml:mrow></mml:math><inline-graphic xlink:href=\"dad7150ieqn1.gif\"></inline-graphic></inline-formula>. The experiment results demonstrate a tunable <inline-formula>\u0000<tex-math><?CDATA $k_{{text{eff}}}^{text{2}}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msubsup><mml:mi>k</mml:mi><mml:mrow><mml:mrow><mml:mtext>eff</mml:mtext></mml:mrow></mml:mrow><mml:mrow><mml:mtext>2</mml:mtext></mml:mrow></mml:msubsup></mml:mrow></mml:math><inline-graphic xlink:href=\"dad7150ieqn2.gif\"></inline-graphic></inline-formula> from 0.40% (5 MHz) to 0.25% (3 MHz), realizing a 37.5% adjustment range of <inline-formula>\u0000<tex-math><?CDATA $k_{{text{eff}}}^{text{2}}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msubsup><mml:mi>k</mml:mi><mml:mrow><mml:mrow><mml:mtext>eff</mml:mtext></mml:mrow></mml:mrow><mml:mrow><mml:mtext>2</mml:mtext></mml:mrow></mml:msubsup></mml:mrow></mml:math><inline-graphic xlink:href=\"dad7150ieqn3.gif\"></inline-graphic></inline-formula>, which establishes a foundation for narrow-band tunable filters.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Creation of tungsten and platinum nanoparticles from nanosecond plasmas in water","authors":"O Krettek, P Pottkämper, P Cignoni, K Tschulik, A von Keudell","doi":"10.1088/1361-6463/ad7301","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7301","url":null,"abstract":"Nanosecond plasmas ignited inside water at tungsten and platinum/iridium electrode tips are used to create very small nanoparticles with radii around 1 nm. Due to the very high power density of 10¹⁶ W m^–2 at an electrode hot spot with a diameter of 10 <italic toggle=\"yes\">µ</italic>m, the surface is ablated during the short plasma pulse, and the metal vapour expands in the cavitation bubble after the plasma. This creates a very large cooling rate and the formation of nanoparticles by condensation from the created metal vapour. Finally, the nanoparticles disperse in the liquid. This sequence is quantified by measuring the net tip erosion by shadowgraphy and the created nanoparticles by transmission electron microscopy and x-ray photoelectron spectroscopy. The condensation process is modelled in conjunction with cavitation theory for the expanding cavitation bubble, which shows very good agreement with experimental data.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor","authors":"Ziyi Wan, Dongjian Jiang, Yuzhan Zheng, Ye Fu, Xiao Sun, Bo Wang, Cuixia Cui, Changping Yao, Wenjun Luo, Zhigang Zou","doi":"10.1088/1361-6463/ad714f","DOIUrl":"https://doi.org/10.1088/1361-6463/ad714f","url":null,"abstract":"Two-electrode solar rechargeable devices can converse and store solar energy without external bias. However, the photo-charging and dark-discharging current of these devices is low and limits their practical applications. Here, the photo-charging and dark-discharging current of Si/poly(N-methylpyrrole) (PNMPy) photoanode increases 21 and 10 times by preparing nanostructured Si semiconductor, up to 5.09 and 2.06 mA cm⁻², respectively. Further studies suggest that the improved current comes from higher separation efficiency of photo-generated carriers and new electron transfer paths on the surface of nanostructured Si. Moreover, a solar rechargeable device of Si/PNMPy/H₂SO₄(aq)/WO₃/FTO was prepared, which indicated good cyclic stability. These results deepen our understanding on the current in solar rechargeable devices and offer guidance for the design of other high-performance devices.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Observation of Young’s double-slit phenomenon in anti-PT-symmetric electrical circuits","authors":"Keyu Pan, Xiumei Wang, Xizhou Shen, Haoyi Zhou, Xingping Zhou","doi":"10.1088/1361-6463/ad73e2","DOIUrl":"https://doi.org/10.1088/1361-6463/ad73e2","url":null,"abstract":"In the last few decades, interference has been extensively studied in both the quantum and classical fields, which reveals light volatility and is widely used for high-precision measurements. We have put forward the phenomenon in which the discrete diffraction and interference phenomena, presented by the time-varying voltage of a Su–Schrieffer–Heeger circuit model with an anti-PT (APT) symmetry. To demonstrate Young’s double-slit phenomenon in an APT circuit, we initially explore the coupled mode theory of voltage in the broken phase, observe discrete diffraction under single excitation and interference under double excitations. Furthermore, we design a phase-shifting circuit to observe the effects of phase difference and distance on discrete interference. Our work combines the effects in optics with condensed matter physics, show the Young’s double-slit phenomenon in electrical circuits theoretically and experimentally.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controllable dual resonances of Fano and EIT in a graphene-loaded all-dielectric GaAs metasurface and its sensing and slow-light applications","authors":"Zhichao Wang, Huahao Huang, Hui Zhang, Miao He, Weiren Zhao","doi":"10.1088/1361-6463/ad73e4","DOIUrl":"https://doi.org/10.1088/1361-6463/ad73e4","url":null,"abstract":"Active nanophotonic metasurfaces have attracted considerable attention for their promise to develop compact, tunable optical metadevices with advanced functions. In this work, we theoretically demonstrated the dynamically controllable dual resonances of Fano and electromagnetically induced transparency (EIT) using a graphene-loaded all-dielectric metasurface with U-shaped gallium arsenide (GaAs) nanobars operating in the near-infrared region. The destructive interference between a subradiant mode (i.e. a dark mode) supported by two vertical GaAs bars and two radiative modes (i.e. two bright modes) supported by a horizontal GaAs nanobar gives rise to a Fano resonance and an EIT window with high transmission and a large quality factor (Q-factor) in the transmission spectrum. Importantly, the transmission amplitudes can be flexibly modulated by adjusting the graphene Fermi levels without rebuilding the nanostructures. This modulation results from the controllable light absorption by the loaded graphene monolayer due to its interband losses in the near-infrared spectrum. Furthermore, the peak wavelengths of the Fano resonance and EIT window with high Q-factors are highly sensitive to variations in the refractive index (RI) of the surrounding medium, giving the proposed metasurface a relatively good sensitivity of ∼700 nm RIU⁻¹ and a high figure of merit of 280, making it an effective RI sensor. Additionally, the metasurface features an adjustable slow light effect, indicated by the adjusted group delay time ranging from 0.12 ps to 0.38 ps. Therefore, the metasurface system proposed in this work offers a viable platform for advanced multi-band optical sensing, low-loss slow light devices, switches, and potential applications in nonlinear optical fields.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}