Journal of Physics D: Applied Physics最新文献

{"title":"Analysis of carrier dynamics and thermal effect of the GaAs photoconductive semiconductor switch in lock-on mode","authors":"Chun Liu, Ming Xu, Shengtao Chen, Li Sun, Liqing Zhang, Qianqian Li and Jiahao Wang","doi":"10.1088/1361-6463/ad76bd","DOIUrl":"https://doi.org/10.1088/1361-6463/ad76bd","url":null,"abstract":"The lock-on effect of the gallium arsenide photoconductive semiconductor switch (GaAs PCSS) at repetition rate aggravates the current crowding and electric field distortion, which significantly increases the risk of switch damage or even failure. Therefore, it is of great significance to investigate the carrier transport and the heat generation mechanism for improving the performance and longevity of GaAs PCSS in lock-on mode. The internal physical process of an opposed-electrode GaAs PCSS at low optical energy and strong electric field is analyzed and discussed by experiment and simulation. A device-circuit hybrid simulation is employed to investigate the transient electric field, carrier concentration, and lattice temperature distribution within the GaAs PCSS in lock-on mode. The device temperature exhibits a positive correlation with the applied bias electric field, resulting in a peak temperature of 1037.25 K at an electric field of 38 kV cm−1. The temperature distribution within the GaAs PCSS indicates a greater possibility for thermal breakdown and damage near the electrodes.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Heusler alloy Mn2CoAl: structural, magnetic and electronic properties","authors":"J Y Yang, X J Xiang, Z J Tan, X K Zhang, S Pan, J Chen and G Z Xu","doi":"10.1088/1361-6463/ad726d","DOIUrl":"https://doi.org/10.1088/1361-6463/ad726d","url":null,"abstract":"In this study, we report on the detailed atomic ordering, magnetic and electrical properties of the Heusler alloy Mn2CoAl, studied via combined experimental methods and a theoretical calculation approach. Our studies confirm the Hg2CuTi-type crystal structure of Mn2CoAl with 25% anti-site disorder between Mn (B:1/4,1/4,1/4) and Co(C:1/2,1/2,1/2) sites. Neutron powder diffraction measurements identify the antiparallel spin couplings between Mn:A↓ and Mn:B↑, Co:C↑, resulting in a ferrimagnetic structure with a net magnetic moment of ∼1.6 μB at room temperature. In terms of the electronic calculations, we find that the anti-site atoms will contribute large densities of states at the Fermi level, thus destroying the spin gapless band structure and making Mn2CoAl a normal ferrimagnetic metal. This report is intended to establish a basic understanding of the structure and physical properties of Mn2CoAl.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Negative damping of terahertz plasmons in counter-streaming double-layer two-dimensional electron gases","authors":"Shengpeng Yang, Hongyang Guo, Ping Zhang, Shaomeng Wang and Yubin Gong","doi":"10.1088/1361-6463/ad76b9","DOIUrl":"https://doi.org/10.1088/1361-6463/ad76b9","url":null,"abstract":"The plasmon excitation in two-dimensional electron gases is a significant way of achieving micro-nanoscale terahertz (THz) devices. Here, we establish a kinetic simulation model to study the THz plasmons amplification in a semiconductor double-quantum-well system with counter-streaming electron drift velocities. By comparing the simulation results with theoretical dispersion relations, we confirm two competing mechanisms of negative damping suitable for THz amplification: Cherenkov-type two-stream instability and a new non-Cherenkov mechanism called kinetic relaxation instability. The former is caused by the interlayer coupling of two slow plasmon modes and only exists when the drift velocities are much greater than the fermi velocities. The latter is a statistical effect caused by the momentum relaxation of electron-impurity scattering and predominates at lower drift velocities. We show that an approximate kinetic dispersion relation can accurately predict the wave growth rates of the two mechanisms. The results also indicate that the saturated plasmonic waves undergo strong nonlinearities such as wave distortion, frequency downshift, wave-packet formation, and spectrum broadening. The nonlinear evolution can be interpreted as the merging of bubble structures in the electron phase-space distribution. The present results not only reveal the potential mechanisms of the plasmonic instabilities in double-layer 2DEGs, but also provide a new guideline for the design of on-chip THz amplifiers.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochemical studies and diffusion kinetics in the Chevrel phase (Mo6S8) for rechargeable Mg batteries","authors":"Gazal Gupta, Raghvendra Gupta, Amit Gupta and Deepak Kumar","doi":"10.1088/1361-6463/ad703a","DOIUrl":"https://doi.org/10.1088/1361-6463/ad703a","url":null,"abstract":"Based on its availability, cost and stability, rechargeable Mg batteries (RMBs) are potential candidates to fulfill the futuristic demand for high energy density storage devices. However, they are minimally explored due to sluggish Mg ion diffusion in cathode materials. Literature suggests that the Chevrel phase (CP) (Mo6S8) holds promise as a cathode (positive electrode) for RMBs due to its open structure and self-healing properties during cycling. This study reports the electrochemical performance of Mo6S8 (synthesized using cost effective precursors (Cu–Mo–MoS2)) as a cathode for RMBs for the first time. The development of Mo6S8 is a two-step process: (i) synthesis of Cu2Mo6S8 via high energy milling method using Cu, Mo and MoS2 as precursors and (ii) leaching of Cu from Cu2Mo6S8. The morphological and structural characteristics of the developed materials are recorded using x-ray diffraction and field emission scanning electron microscopy. The developed Mo6S8 is cuboid-shaped with a rhombohedral unit cell. To record the electrochemical performance of Mo6S8 as a positive electrode for rechargeable Mg batteries (RMBs), CR2016 type half-cells are fabricated. It is observed that the initial discharge capacity was 89 mA h g−1 at a current density of 25 mA g−1 (1C = 128 mA g−1). Interestingly, the capacity increases from 89 to ≈100 mA h g−1 during 50 cycles which is higher than reported in the literature. The coulombic efficiency (CE) of ≈90% is observed for 100 cycles. Additionally, the over-potential decreases with an increase in cycle number. Importantly, the authors explained the diffusion behavior of Mg ions in Mo6S8 with 0.4 M 2(PhMgCl)-AlCl3/THF (APC) electrolyte via cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic intermittent titration (GITT) technique. The diffusion coefficients have been calculated and fall in the range of 10−8−10−14 cm2 s−1. Also, the authors explain the effect of outer site activation during cycling on the diffusion kinetics of the materials using the GITT technique. This investigation of diffusion kinetics of Mg ions in Mo6S8 may pave the way for evaluating various CPs as electrode materials for future rechargeable magnesium battery systems.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 85Rb transverse modulation magnetometer in the geophysical range based on atomic alignment states","authors":"Tao Shi, Ge Jin, Hong Zhang and Sheng Zou","doi":"10.1088/1361-6463/ad726f","DOIUrl":"https://doi.org/10.1088/1361-6463/ad726f","url":null,"abstract":"We have constructed a transverse modulated magnetometer based on spin alignment in a paraffin-coated 85 Rb cell operated in a geophysical magnetic field of 47.1 µT. When an orthogonal driving magnetic field ( axis) is resonant on the Larmor frequency ( axis), we have proposed a new method to zero the static residual magnetic fields in the transverse plane and achieved a sensitivity of with bandwidth of 200 Hz. The repump light ( ) redistributes the populations in the ground state, rendering the state dark. This effect significantly amplifies the optical rotation signals nearly fourfold. The numerical solution of the Liouville equation is in good agreement with the experimental results. By using perturbation treatment and employing appropriate approximations, the derived analytical expressions for optical rotation are deduced to succinctly elucidate the dynamics of atomic alignment under parametric modulation. These outcomes could be extended for the advancement of an alignment magnetometer that has been designed to detect a weak magnetic signal in the geophysical range.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anisotropic vanadium dioxide-based metasurfaces for polarization-multiplexed holograms in the terahertz region","authors":"Sicheng Cao, Zhenxuan Chen, Runxuan Zhang, Chaoxian Tang, Zijun Chen, Ruixing Nie, Feng Zhao, Shenyi Huang and Zhengyong Song","doi":"10.1088/1361-6463/ad760e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad760e","url":null,"abstract":"Holography plays a significant role in optical research and has been utilized in numerous applications. Metasurface holograms are attracting more and more attention with the advancement of their efficient wavefront reshaping. However, the realization of multi-channel holograms and dynamic switching of them still remain challenging in the terahertz band. In this paper, anisotropic vanadium dioxide (VO2) metasurfaces are used to realize four-channel holograms at 1.5 THz. It is assembled by a set of VO2 meta-atoms with independent phase control for different channels. Depending on the polarization of incident wave and the state of VO2, four channels are independently selected. After optimization to eliminate crosstalk between top and bottom layers, two holograms are projected under x- and y-polarized incidences when VO2 is metallic. Similarly, two additional holograms are achieved as VO2 is insulating. As a novel solution to terahertz multi-channel holography, this work may be applied to compact optical system and high-volume optical encryption.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on flexible antenna and distributed deep learning pattern recognition for partial discharge monitoring of transformer","authors":"Yuexuan Sun, Chang-Heng Li, Yunfeng Long, Zhengyong Huang and Jian Li","doi":"10.1088/1361-6463/ad759f","DOIUrl":"https://doi.org/10.1088/1361-6463/ad759f","url":null,"abstract":"Power transformer is an important part of the power system, and continuous monitoring of partial discharges can provide a more reasonable program for fault diagnosis and operational maintenance of the transformer. However, the rigid partial discharge UHF antenna can not be installed in a conformal fit with the monitored equipment, and the partial discharge UHF signal attenuation is serious, resulting in low detection energy efficiency and gain performance can not meet the demand. The centralized deep learning local discharge pattern recognition method has low training efficiency, and distributed deep learning can improve the training efficiency, but the heterogeneous data from multiple sources will reduce the model accuracy. Due to this, this paper designs a UHF flexible composite helical antenna with miniaturization, wide bandwidth, high gain and high bending deformation stability, and investigates a federated learning pattern recognition method based on residual contraction network, which substantially improves the training efficiency while ensuring the accuracy.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insights into the magnetic signature in VS2 nanosheets for spintronics applications: an experimental and ab initio approach","authors":"Saurav Lahiri, Manish Kumar, Ujjal Bikash Parashar and R Thangavel","doi":"10.1088/1361-6463/ad7153","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7153","url":null,"abstract":"VS2 nanosheets were synthesized using a facile hydrothermal method with varying hydrothermal durations for detailed study of their magnetic properties for spintronics applications. The (001) peak near 15.45° in the x-ray diffraction pattern confirmed the formation of the hexagonal phase of VS2 consistent with the Raman spectrum and high-resolution transmission electron microscopy study. X-ray photoelectron spectroscopy confirmed the formation of VS2 with the +4 oxidation state of V. Morphology was determined by field emission scanning electron microscopy that showed the morphological transition from nanoflowers to nanosheets with increase in the hydrothermal duration from 16 h to 24 h. The VS2 nanosheets were subject to magnetic measurements using a superconducting quantum interference device. The isothermal magnetization versus magnetic field plot showed typical hysteresis behaviour at low fields with maximum saturation magnetization of 3.25 memu g−1 at 50 K which gradually decreased with increase in temperature. The coercivity , however, increased with increase in temperature, hinting at the possible short range of the existing ferromagnetic (FM) order. The field-cooled and zero-field-cooled curves showed a lack of FM clustering. Fitting of the magnetization versus temperature plot showed the formation of a mixed magnetic phase, that is both a paramagnetic (PM) phase (at high fields) and a FM phase (at low fields). The PM Curie temperature obtained from the fitting hinted at canted antiferromagnetic order. Magnetoresistance (MR) measurement in a current parallel to the field configuration revealed a negative MR of 10.4%. Further, density functional theory and Monte Carlo simulations based on the Metropolis algorithm were used to study the layer-dependent electronic band structure of VS2 as well as its Curie temperature for its applicability in spintronics devices.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of bulk trap density using fully I–V-based optoelectronic differential ideality factor in multi-layer MoS2 FETs","authors":"Soyeon Kim, Jaewook Yoo, Seohyeon Park, Hongseung Lee, Hyeonjun Song, Seongbin Lim, Minah Park, Choong-Ki Kim, TaeWan Kim, Bongjoong Kim and Hagyoul Bae","doi":"10.1088/1361-6463/ad75a2","DOIUrl":"https://doi.org/10.1088/1361-6463/ad75a2","url":null,"abstract":"Molybdenum disulfide (MoS2) has excellent optoelectronic properties, chemical stability, and a two-dimensional (2D) structure, making MoS2 a very versatile field-effect device material. Herein, we characterize MoS2 and utilize a photo-responsive I–V technique for extracting the energy distribution of the bulk traps in multi-layer MoS2 field effect transistors (FET). This method uses the differential ideality factor in both dark and light conditions. The differential ideality factor enables the efficient quantitative extraction of the device trap density by considering the nonlinear characteristics of the subthreshold region (VON < VGS < VT). To accurately differentiate between the sub-bandgap traps and the interface traps near the conduction band, near-infrared light (λ= 1530 nm) optical illumination was used for the light state characterization. The bulk trap densities under dark state and light state conditions were derived for multi-layer (7-layer and 9-layer) MoS2 FET channels, and the influence of light illumination and overall multi-layer thickness on the bulk trap density was confirmed. The accurate extraction of the trap density enables the design of MoS2 FETs with long-term stability and high optoelectronic performance.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Resisting oxygen/moisture permeation in quantum dots converted optoelectronic devices","authors":"Xuan Yang, Bin Xie, Xiaobing Luo","doi":"10.1088/1361-6463/ad759d","DOIUrl":"https://doi.org/10.1088/1361-6463/ad759d","url":null,"abstract":"Quantum dots (QDs) are promising semiconducting luminous nanocrystals with superior optoelectronic characteristics. Unfortunately, these nanocrystals are fragile when exposed to humid environment. Oxygen and moisture molecules could erode QDs’ structure and degrade their luminous ability, which severely hinders the wide application of QDs in optoelectronic devices. Therefore, it is significantly important to resist oxygen/moisture permeation in the packaging of these QDs converted devices. In this review, we briefly introduce the oxygen/moisture-induced degradation mechanism of QDs and then the permeation theories. Subsequently, we review some strategies for resisting oxygen/moisture permeation from a packaging perspective, and analyze them with the permeation theories. Finally, we outline some future directions for developing efficient oxygen/moisture resistance solutions of QDs converted optoelectronic devices.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}