Etching of Ga2O3: an important process for device manufacturing

Abstract

Etching plays a key role in processing and manufacturing electronic and optoelectronic devices. For ultra-wide bandgap semiconductor gallium oxide (Ga2O3), its etching investigations and evolution mechanism are still at the earlier stage, and some more research gumption should be invested. In this review, we make a summary on the etching of Ga2O3, including dry (plasma) etching, wet chemical etching, and photoelectrochemical etching, and discuss the etching results, existing problems, and feasible solutions, in order to provide guidance and advises for furtherly developing the Ga2O3 etching and Ga2O3-based electronic and optoelectronic devices.