通过调节半导体的形态显著改善法拉第结太阳能充电设备的光充电和暗放电电流

IF 3.1 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Physics D: Applied Physics Pub Date : 2024-09-06 DOI:10.1088/1361-6463/ad714f

Ziyi Wan, Dongjian Jiang, Yuzhan Zheng, Ye Fu, Xiao Sun, Bo Wang, Cuixia Cui, Changping Yao, Wenjun Luo, Zhigang Zou

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引用次数: 0

摘要

双电极太阳能充电装置可以在没有外部偏压的情况下转换和储存太阳能。然而，这些器件的光充电和暗放电电流较低，限制了它们的实际应用。在这里，通过制备纳米结构硅半导体，硅/聚（N-甲基吡咯）（PNMPy）光阳极的光充电和暗放电电流分别提高了 21 倍和 10 倍，达到 5.09 mA cm-2 和 2.06 mA cm-2。进一步的研究表明，电流的提高来自于纳米结构硅表面光生载流子更高的分离效率和新的电子传输路径。此外，还制备了 Si/PNMPy/H2SO4(aq)/WO3/FTO 太阳能充电装置，该装置具有良好的循环稳定性。这些结果加深了我们对太阳能充电设备中电流的理解，并为设计其他高性能设备提供了指导。

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Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor

Two-electrode solar rechargeable devices can converse and store solar energy without external bias. However, the photo-charging and dark-discharging current of these devices is low and limits their practical applications. Here, the photo-charging and dark-discharging current of Si/poly(N-methylpyrrole) (PNMPy) photoanode increases 21 and 10 times by preparing nanostructured Si semiconductor, up to 5.09 and 2.06 mA cm⁻², respectively. Further studies suggest that the improved current comes from higher separation efficiency of photo-generated carriers and new electron transfer paths on the surface of nanostructured Si. Moreover, a solar rechargeable device of Si/PNMPy/H₂SO₄(aq)/WO₃/FTO was prepared, which indicated good cyclic stability. These results deepen our understanding on the current in solar rechargeable devices and offer guidance for the design of other high-performance devices.

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来源期刊

Journal of Physics D: Applied Physics 物理-物理：应用

CiteScore

6.80

自引率

8.80%

发文量

835

审稿时长

2.1 months

期刊介绍： This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.