Journal of Nanoelectronics and Optoelectronics最新文献_第6页

Skin Detection System Using Infrared Optoelectronic Technology and Its Application in Facial Recognition 红外光电皮肤检测系统及其在人脸识别中的应用

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3451

Liangxue Zhu, Guangyu Zhu

{"title":"Skin Detection System Using Infrared Optoelectronic Technology and Its Application in Facial Recognition","authors":"Liangxue Zhu, Guangyu Zhu","doi":"10.1166/jno.2023.3451","DOIUrl":"https://doi.org/10.1166/jno.2023.3451","url":null,"abstract":"Facial recognition technology has made significant progress. However, variable lighting conditions can affect its performance. Considering the need to scan facial skin for recognition purposes, this study proposes a miniature optoelectronic acquisition system for skin in the near-infrared range. The system utilizes the C11708MA photodetector from Hamamatsu Photonics’ MS series as the probe for spectral data acquisition. Other hardware components are designed accordingly. A three-stage amplification buffer circuit is employed as the front-end acquisition and preprocessing circuit. The AD7671 chip from Analog Devices Inc. is selected as the AD converter, and the communication module utilizes the CY7C68013 chip from Cypress’ EZ-USB FX2 series. The control and transmission module employs the EP2C5T144C8N FPGA chip from ALTERA’s Cyclone II generation. In order to address the power supply requirements of the CY7C68013 USB chip (3.3 V), the FPGA core (1.2 V), and the AD7671 and front-end preprocessing circuit (5 V), AMS1117 voltage regulator chips are designed for stable 5 V–1.2 V and 5 V–3.3 V power supplies. In the experiments, wavelength calibration and spectral preprocessing are performed on the system prior to data processing. Near-infrared reflectance spectra of different skin conditions (melanoma, vitiligo) are compared with normal skin. The results demonstrate the accurate assessment capability of the designed infrared optoelectronic skin detection system. Facial skin data obtained from the system are used to generate facial images, and the recognition performance of different detection systems is compared in an algorithmic environment, thereby demonstrating the promising application prospects of the infrared optoelectronic skin detection system in the field of facial recognition.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge Couple Device (CCD) Photoelectric Signal Data Acquisition and Its Application in the Machine Vision of Artificial Intelligence 电荷耦合器件(CCD)光电信号数据采集及其在人工智能机器视觉中的应用

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3450

Yan Liu, Jianhang Zeng

{"title":"Charge Couple Device (CCD) Photoelectric Signal Data Acquisition and Its Application in the Machine Vision of Artificial Intelligence","authors":"Yan Liu, Jianhang Zeng","doi":"10.1166/jno.2023.3450","DOIUrl":"https://doi.org/10.1166/jno.2023.3450","url":null,"abstract":"The development of Charge Couple Device (CCD) technology is particularly rapid in the fields of image sensors and non-contact measurement. In this study, a data acquisition device applied to CCD photoelectric detection system is designed. Among them, the design of the Differential Amplification (DA) module, Analog-to-Digital Converter (ADC) module, First In First Out (FIFO) cache module, and Complex Programmable Logic Device (CPLD) module in this device are emphasized. The ADC circuit in the ADC module converts two 4 MHz analog photoelectric signals generated by the CCD sensor at a frequency of 8 MHz, and then outputs 12-bit digital signals. The collected photoelectric signal is used to detect the damage to the surface of ancient buildings with the machine vision technology of artificial intelligence (AI). In the test, the DA circuit can adjust the voltage range of two photoelectric analog signals output by CCD to a predetermined range (1.5 V∼2.0 V). In the ADC circuit test, there is no data in the FIFO when there is no input conversion, and the converted data will be stored in the internal FIFO during the conversion clock period. Based on machine vision technology, surface damage types of ancient buildings are defined, namely spalling, cracks, and disruption, and surface image samples are generated from collected signals. The samples are trained using the convolutional neural network, and the classifier is generated. The test reveals that the designed photoelectric signal acquisition device and AI machine vision technology can accurately classify the surface damage of ancient buildings.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of Energy Transmission and Design of Additional Capacitance for a Novel Secondary Side Parallel LCD Forward Converter 一种新型二次侧并联LCD正激变换器的能量传输分析及附加电容设计

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3457

Gao-Zhong Zhu, Shu-Lin Liu

{"title":"Analysis of Energy Transmission and Design of Additional Capacitance for a Novel Secondary Side Parallel LCD Forward Converter","authors":"Gao-Zhong Zhu, Shu-Lin Liu","doi":"10.1166/jno.2023.3457","DOIUrl":"https://doi.org/10.1166/jno.2023.3457","url":null,"abstract":"For the deficiency of low utilization ratio of transformer excitation energy, complex circuit structure, low efficiency and low output power in the existing magnetic reset technology, a secondary parallel LCD forward converter which can avoid reverse charging of additional capacitor is proposed. According to the different working modes of inductors in the proposed converter, the converter is divided into different combined working modes, and the working principles of different combined working modes are analyzed in detail. At the same time, the influence of additional LCD circuit on the performance of the proposed converter is deeply studied based on the working principles of different combination modes. According to the performance analysis, the analytical expression of additional capacitance on the working mode is derived, and the optimal design scheme of additional capacitance parameters is put forward. Finally, in order to verify the effect of the additional capacitance C 2 on the operation mode of the converter, an experimental analysis of the secondary parallel LCD forward converter which can avoid the reverse charging of the additional capacitor is carried out. The experimental waveform analysis verifies the correctness of the theoretical analysis and the feasibility of the design method of the additional capacitor parameters.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Infrared Thermal Imaging Analysis of Thermal Insulation Performance in SiO₂ Aerogel Fabric SiO2气凝胶织物隔热性能的红外热成像分析

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3453

Wen-Xiao Chen, Nan Sun, Yue Shen, Xue-Feng Yan, Yan Ma, Mohamed Hashem, Hassan Fouad

引用次数: 0

Impact of γ Irradiation Damage to CMOS Image Sensor on Camera Signal-To-Noise Ratio γ辐照损伤CMOS图像传感器对相机信噪比的影响

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3459

Jie Feng, Hai-Chuan Wang, Kun-Fang Li, Yu-Dong Li, Lin Wen, Qi Guo

{"title":"Impact of <i>γ</i> Irradiation Damage to CMOS Image Sensor on Camera Signal-To-Noise Ratio","authors":"Jie Feng, Hai-Chuan Wang, Kun-Fang Li, Yu-Dong Li, Lin Wen, Qi Guo","doi":"10.1166/jno.2023.3459","DOIUrl":"https://doi.org/10.1166/jno.2023.3459","url":null,"abstract":"The industrial operation of nuclear power plant under the strong radiation environment requires the detection of environmental visual information by the camera mounted on the nuclear robot. CMOS Image Sensor, as the core component of camera, will be affected by γ -ray radiation when working in nuclear radiation environment, which will degrade photoelectric sensitive parameters and bring in visual noise, embodied in a decrease of signal-to-noise ratio of the camera. This study carried out the experiments of CMOS Image Sensor and camera system under γ -ray irradiation, analyzed the degradation mechanism of dark current and quantum efficiency of CMOS image sensor under γ -ray radiation, and analysis their impact mechanism on signal-to-noise ratio of the camera. A quantitative evaluation formula was established to evaluate the impact of dark current and quantum efficiency of the CMOS image sensor on signal-to-noise ratio of camera in γ -ray radiation environment. This study provides the theoretical basis for the evaluation of the anti-radiation camera operating under strong nuclear radiation environment and contributes to the future development of nuclear industry.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"129 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Meta Analytic Review on Recent Advancements of Class AB Power Amplifiers AB类功率放大器最新进展的元分析综述

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3452

Shikha Soni, Vandana Niranjan, Ashwni Kumar

引用次数: 0

Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application 基于片上增益补偿技术的高精度温度传感器设计

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3454

Le Luo

{"title":"Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application","authors":"Le Luo","doi":"10.1166/jno.2023.3454","DOIUrl":"https://doi.org/10.1166/jno.2023.3454","url":null,"abstract":"The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical value. Addressing these challenges, this study systematically investigates on-chip complementary metal-oxide-semiconductor (CMOS) temperature sensors based on distinct signal domains processed by temperature readout circuits. Specifically, the research commences by analyzing the issues of several degeneracy points in the front-end circuit of a bipolar junction transistor (BJT) temperature sensor with current gain compensation technology. To address the intricate design challenges in advanced technologies and calibration complexities in industrial applications, dynamic component matching, current gain compensation, and chopper stabilization are harnessed. A novel dynamic current gain canceling technique for temperature readout is introduced, enhancing temperature measurement accuracy without incurring additional power consumption or area overhead. Ultimately, an all-digital CMOS temperature sensor is realized using the SMIC 55 nm CMOS process. Occupying a mere 0.29 mm2 of core area, the design operates efficiently across a wide supply voltage range of 1.2 V to 3.6 V. Covering a temperature spectrum from −40 °C to 125 °C, the sensor demonstrates a calibration error of just ±0.7 °C. This achievement is attributed to the incorporation of the proposed dynamic current gain compensation technique.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of New LED Curtain Wall Controller and Its Effect in Architectural Decoration 新型LED幕墙控制器的设计及其在建筑装饰中的效果

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3446

Rongrong Cui

{"title":"Design of New LED Curtain Wall Controller and Its Effect in Architectural Decoration","authors":"Rongrong Cui","doi":"10.1166/jno.2023.3446","DOIUrl":"https://doi.org/10.1166/jno.2023.3446","url":null,"abstract":"In recent years, LED with high brightness or ultra-high brightness has appeared. Because of its low production cost, it has been widely used. Compared with other display media, LED has the advantages of rich display content, wide dynamic range, vivid picture, no pollution, long life, etc., so it is used in building curtain wall facade decoration. This research designs LED curtain wall control system, the use of SD600 chip dimming control of LED, the use of absorbing current mode LED drive, further design of single SD600 chip application circuit, multi-SD600 chip application circuit. LED curtain wall display text need to design the corresponding graphic processing hardware, the hardware is composed of ARM microprocessor LPC2210 and its related peripheral circuits. The core chip of the LPC2210 processor chip needs 1.8 V working voltage, and the I/O interface voltage is 3.3 V, so it is necessary to design the corresponding power circuit; The system clock is adjusted through the internal PLL circuit to make the system run faster and design its crystal oscillator circuit; The power monitoring chip CAT1025JI-30 is adopted to build reset circuit, 20-pin interface type JTAG interface circuit; It is considered that the UARTO interface can’t be directly connected with the RS232 interface of PC, the MAX3232 chip is introduced for level conversion, and the serial interface circuit based on LPC2210 is designed. In the experiment, the new technology is used for outdoor lighting LED curtain wall construction, and the development tool uses the ADS1.2 provided by ARM company. The μ C/OS-II embedded operating system is introduced to control the graphic processing hardware resources, reading the file from the SD card, and writing the text file and BMP file into the three-dimensional array, the corresponding text and pattern effect are displayed in the LED curtain wall.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135142791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Sliding Mode Controller Based on 7 nm Gate Logic 基于7nm门逻辑的滑模控制器设计

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3440

Li Yan, Liang Wenbin, Liao Jie, Yu Xian

引用次数: 0

Track Unevenness Prediction Based on Static Track Inspection Data Matching 基于静态轨道检测数据匹配的轨道不均匀度预测

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3439

Jianpu Xi, Changle Zhou, Xuetao Qiao, Zhuolin Zhou, Laihua Luo, Qing Yang, Zexiang Zhao

引用次数: 0