Journal of Nanoelectronics and Optoelectronics最新文献_第6页

Broadband High-Efficiency Solar Absorber Based on Tungsten Hole-Mesh 基于钨孔网的宽带高效太阳能吸收体

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3456

Na Li, Chi Zhao, Xin Rao, Bonan Xu, Yuyu Shan, Jingke Zhang, Yiqun Zhang, Guo Liu

{"title":"Broadband High-Efficiency Solar Absorber Based on Tungsten Hole-Mesh","authors":"Na Li, Chi Zhao, Xin Rao, Bonan Xu, Yuyu Shan, Jingke Zhang, Yiqun Zhang, Guo Liu","doi":"10.1166/jno.2023.3456","DOIUrl":"https://doi.org/10.1166/jno.2023.3456","url":null,"abstract":"Solar energy is widely considered a “green energy” source, and to maximize its utilization, efficient solar absorbers that can absorb solar energy at various optical frequencies are necessary. We report a high-performance, broadband solar absorber made of just two materials –W and Al 2 O 3 . The absorber is composed of three layers, arranged from top to bottom: an Al 2 O 3 dielectric layer, a W hole-mesh layer, and a W substrate layer. Finite difference time domain method analysis simulations demonstrated an ultra-high absorption rate of 97.64% across a wide spectrum of visible and near-infrared light. The high absorption rate is attributed to the combined effects of surface plasmon resonance, cavity resonance, and the high imaginary part of the permittivity of tungsten. Furthermore, we analyzed the influence of the geometric parameters of the W hole-mesh absorber on the absorption performance and explained the physical mechanism of the high absorption rate by analyzing impedance matching. Interestingly, the absorber is insensitive to polarized light and can still maintain a high absorption rate of 90% at an incident angle of 0–60°. Our findings indicate that the W hole-mesh absorber has significant advantages in solar energy harvesting, paving the way for more efficient and cost-effective solar energy technology.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultraviolet Detection Based on AlGaN/GaN Heterojunction Under Low-Temperature 低温下基于AlGaN/GaN异质结的紫外检测

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3473

Lechen Yang, Min Xiong, Wenhua Shi, Baoshun Zhang

引用次数: 0

Research on the Filling Process of Ultraviolet Nanoimprint Lithography with High-Resolution Stamps 高分辨率邮票紫外纳米压印填充工艺研究

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3483

Hongwen Sun, Heyu Liu, Xiajuan Shen, Lijun Gu, Jingsheng Wang, Ziyi Ma, Dongyang Xie

{"title":"Research on the Filling Process of Ultraviolet Nanoimprint Lithography with High-Resolution Stamps","authors":"Hongwen Sun, Heyu Liu, Xiajuan Shen, Lijun Gu, Jingsheng Wang, Ziyi Ma, Dongyang Xie","doi":"10.1166/jno.2023.3483","DOIUrl":"https://doi.org/10.1166/jno.2023.3483","url":null,"abstract":"With the rapid development of the semiconductor industry, the feature size of integrated circuits (ICs) is continuously getting smaller and smaller. Although traditional optical lithography and extreme ultraviolet (EUV) lithography can fabricate products with 5-nm feature size, the production cost is quite high. As a candidate of next-generation lithography, ultraviolet nanoimprint lithography (UV-NIL) can also achieve high-resolution imprints at a lower cost. Based on contact mechanics, the filling mechanism and imprint quality of UV-NIL were examined using high-resolution stamps with different feature sizes of 3 nm, 4 nm, and 5 nm. It was found that UV-NIL could successfully replicate patterns with feature sizes down to 3 nm; however, the imprinting process was more complicated. Among the selected nine stamps, the replications of 4-nm and 5-nm feature sizes had a relatively uniform residual layer and a symmetric contact pressure, whereas the replications of 3-nm feature size had an asymmetric contact pressure, resulting in an asymmetric residual layer. In order to obtain a more uniform residual layer with higher-quality imprinting, the pressure applied to the left and right sides of a stamp should be appropriately changed. The pattern density of a stamp had a certain influence on the contact pressure. As the pattern density increased, the contact pressure tended to be uniform; however, when the pattern density exceeded 0.5, the situation became worse. This research can provide guidance for promoting the development of UV-NIL in the direction of high-resolution pattern replication.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"129 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Radio on Fiber System for Frequency 32-Tupling Millimeter-Wave Generation and Transmission Using Polarization Modulators 利用偏振调制器产生和传输32倍频率毫米波的新型光纤无线电系统

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3462

Xin-Qiao Chen, Wen-Yao Ba, Xiao-Rui Liu, Kai-Xian Liu, Si-Yuan Dai, Xu Chen

{"title":"A Novel Radio on Fiber System for Frequency 32-Tupling Millimeter-Wave Generation and Transmission Using Polarization Modulators","authors":"Xin-Qiao Chen, Wen-Yao Ba, Xiao-Rui Liu, Kai-Xian Liu, Si-Yuan Dai, Xu Chen","doi":"10.1166/jno.2023.3462","DOIUrl":"https://doi.org/10.1166/jno.2023.3462","url":null,"abstract":"A new radio on fiber (ROF) scheme for generation and transmission frequency 32-tupling millimeter-wave (MMW) is proposed. At the central station (CS), six PoIMs are used to construct the ±16 order sidebands generator which can generate ±16 order sidebands. The sideband of +16th order is separate out by an optical interleaver from the output of ±16 order sidebands generator first, then the data of down-link signal is modulated on it. At the base station (BS), a portion sideband of −16th order from the down-link optical signal is separted out with a fiber Bragg grating (FBG) first, then the up-link data is modulated on it for carrier reuse. The remaining ±16th order sidebands from the FBG are beat in a photodetector (PD), then the frequency 32-tupling MMW signal with the down-link data is generated. The key part of this system is the ±16th order sideband generator, in which the ±16th order sidebands with the carrier component can be generated by adjusting the amplitudes and initial phases of the radio frequency (RF) signals loaded on the PoIMs, and the carrier can be cancelled by two 1×2 optical coupler with adjustable splitting ratio and 180° optical phase shifter (OPS). The principle of operation to generate frequency 32-tupling is theoretically analyzed and verified by simulation experiments. The optic sideband suppression ratio (OSSR) of the generated sidebands of ±16th order from the theoretical derivation and experiments are 29.974 dB and 29.793 dB, respectively, the RF spurious suppression ratio (RFSSR) of the obtained frequency 32-tupling MMW from theoretical derivation and experiment are 23.960 dB and 23.814 dB, respectively, which verifies the feasibility of our method. The transmission experiments are carried out. For 30 km fiber with 2.5 Gbps data rate, the Q value and power penalty for up-link and down-link are greater than 6 and less than 0.4 dB, respectively.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical Physical Parameters of Fine Particulate Matter Based on Light Scattering Method 基于光散射法的细颗粒物光学物理参数

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3448

Peng Xie, Juntong Liu, Kechao Chen

{"title":"Optical Physical Parameters of Fine Particulate Matter Based on Light Scattering Method","authors":"Peng Xie, Juntong Liu, Kechao Chen","doi":"10.1166/jno.2023.3448","DOIUrl":"https://doi.org/10.1166/jno.2023.3448","url":null,"abstract":"Following the Internet, the Internet of Things (IoT) has become another revolutionary technology in recent years. In recent years, Internet of Things technology has been applied to various industries such as agricultural production, intelligent transportation and industrial production, including the wireless system network under the Internet of Things technology. The problem of particulate matter pollution has become more and more concerned. However, how to quickly and accurately detect particulate matter concentration has become a research hotspot. The traditional filter membrane weighing method and ray absorption method have many limitations, which cannot meet the requirements of fast and accurate. The measurement of particle mass concentration by light scattering method is a non-contact detection method of particle mass concentration. In this paper, light scattering methods are combined with the theory of IoT wireless systems to discuss the photophysical parameters of tiny particles, such as particle size and density. This paper mainly studies the formation mechanism, particle detection principle and numerical simulation, and the data intelligent analysis of the optical and physical parameters of the particles. The particle size distribution, average particle size and density were obtained by CCD photosensor experiment. The experimental results show that the optical parameters of different particle sizes are accurate and reliable.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Skin Detection System Using Infrared Optoelectronic Technology and Its Application in Facial Recognition 红外光电皮肤检测系统及其在人脸识别中的应用

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3451

Liangxue Zhu, Guangyu Zhu

{"title":"Skin Detection System Using Infrared Optoelectronic Technology and Its Application in Facial Recognition","authors":"Liangxue Zhu, Guangyu Zhu","doi":"10.1166/jno.2023.3451","DOIUrl":"https://doi.org/10.1166/jno.2023.3451","url":null,"abstract":"Facial recognition technology has made significant progress. However, variable lighting conditions can affect its performance. Considering the need to scan facial skin for recognition purposes, this study proposes a miniature optoelectronic acquisition system for skin in the near-infrared range. The system utilizes the C11708MA photodetector from Hamamatsu Photonics’ MS series as the probe for spectral data acquisition. Other hardware components are designed accordingly. A three-stage amplification buffer circuit is employed as the front-end acquisition and preprocessing circuit. The AD7671 chip from Analog Devices Inc. is selected as the AD converter, and the communication module utilizes the CY7C68013 chip from Cypress’ EZ-USB FX2 series. The control and transmission module employs the EP2C5T144C8N FPGA chip from ALTERA’s Cyclone II generation. In order to address the power supply requirements of the CY7C68013 USB chip (3.3 V), the FPGA core (1.2 V), and the AD7671 and front-end preprocessing circuit (5 V), AMS1117 voltage regulator chips are designed for stable 5 V–1.2 V and 5 V–3.3 V power supplies. In the experiments, wavelength calibration and spectral preprocessing are performed on the system prior to data processing. Near-infrared reflectance spectra of different skin conditions (melanoma, vitiligo) are compared with normal skin. The results demonstrate the accurate assessment capability of the designed infrared optoelectronic skin detection system. Facial skin data obtained from the system are used to generate facial images, and the recognition performance of different detection systems is compared in an algorithmic environment, thereby demonstrating the promising application prospects of the infrared optoelectronic skin detection system in the field of facial recognition.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge Couple Device (CCD) Photoelectric Signal Data Acquisition and Its Application in the Machine Vision of Artificial Intelligence 电荷耦合器件(CCD)光电信号数据采集及其在人工智能机器视觉中的应用

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3450

Yan Liu, Jianhang Zeng

{"title":"Charge Couple Device (CCD) Photoelectric Signal Data Acquisition and Its Application in the Machine Vision of Artificial Intelligence","authors":"Yan Liu, Jianhang Zeng","doi":"10.1166/jno.2023.3450","DOIUrl":"https://doi.org/10.1166/jno.2023.3450","url":null,"abstract":"The development of Charge Couple Device (CCD) technology is particularly rapid in the fields of image sensors and non-contact measurement. In this study, a data acquisition device applied to CCD photoelectric detection system is designed. Among them, the design of the Differential Amplification (DA) module, Analog-to-Digital Converter (ADC) module, First In First Out (FIFO) cache module, and Complex Programmable Logic Device (CPLD) module in this device are emphasized. The ADC circuit in the ADC module converts two 4 MHz analog photoelectric signals generated by the CCD sensor at a frequency of 8 MHz, and then outputs 12-bit digital signals. The collected photoelectric signal is used to detect the damage to the surface of ancient buildings with the machine vision technology of artificial intelligence (AI). In the test, the DA circuit can adjust the voltage range of two photoelectric analog signals output by CCD to a predetermined range (1.5 V∼2.0 V). In the ADC circuit test, there is no data in the FIFO when there is no input conversion, and the converted data will be stored in the internal FIFO during the conversion clock period. Based on machine vision technology, surface damage types of ancient buildings are defined, namely spalling, cracks, and disruption, and surface image samples are generated from collected signals. The samples are trained using the convolutional neural network, and the classifier is generated. The test reveals that the designed photoelectric signal acquisition device and AI machine vision technology can accurately classify the surface damage of ancient buildings.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of Energy Transmission and Design of Additional Capacitance for a Novel Secondary Side Parallel LCD Forward Converter 一种新型二次侧并联LCD正激变换器的能量传输分析及附加电容设计

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3457

Gao-Zhong Zhu, Shu-Lin Liu

{"title":"Analysis of Energy Transmission and Design of Additional Capacitance for a Novel Secondary Side Parallel LCD Forward Converter","authors":"Gao-Zhong Zhu, Shu-Lin Liu","doi":"10.1166/jno.2023.3457","DOIUrl":"https://doi.org/10.1166/jno.2023.3457","url":null,"abstract":"For the deficiency of low utilization ratio of transformer excitation energy, complex circuit structure, low efficiency and low output power in the existing magnetic reset technology, a secondary parallel LCD forward converter which can avoid reverse charging of additional capacitor is proposed. According to the different working modes of inductors in the proposed converter, the converter is divided into different combined working modes, and the working principles of different combined working modes are analyzed in detail. At the same time, the influence of additional LCD circuit on the performance of the proposed converter is deeply studied based on the working principles of different combination modes. According to the performance analysis, the analytical expression of additional capacitance on the working mode is derived, and the optimal design scheme of additional capacitance parameters is put forward. Finally, in order to verify the effect of the additional capacitance C 2 on the operation mode of the converter, an experimental analysis of the secondary parallel LCD forward converter which can avoid the reverse charging of the additional capacitor is carried out. The experimental waveform analysis verifies the correctness of the theoretical analysis and the feasibility of the design method of the additional capacitor parameters.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Infrared Thermal Imaging Analysis of Thermal Insulation Performance in SiO₂ Aerogel Fabric SiO2气凝胶织物隔热性能的红外热成像分析

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3453

Wen-Xiao Chen, Nan Sun, Yue Shen, Xue-Feng Yan, Yan Ma, Mohamed Hashem, Hassan Fouad

引用次数: 0

Impact of γ Irradiation Damage to CMOS Image Sensor on Camera Signal-To-Noise Ratio γ辐照损伤CMOS图像传感器对相机信噪比的影响

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3459

Jie Feng, Hai-Chuan Wang, Kun-Fang Li, Yu-Dong Li, Lin Wen, Qi Guo

{"title":"Impact of <i>γ</i> Irradiation Damage to CMOS Image Sensor on Camera Signal-To-Noise Ratio","authors":"Jie Feng, Hai-Chuan Wang, Kun-Fang Li, Yu-Dong Li, Lin Wen, Qi Guo","doi":"10.1166/jno.2023.3459","DOIUrl":"https://doi.org/10.1166/jno.2023.3459","url":null,"abstract":"The industrial operation of nuclear power plant under the strong radiation environment requires the detection of environmental visual information by the camera mounted on the nuclear robot. CMOS Image Sensor, as the core component of camera, will be affected by γ -ray radiation when working in nuclear radiation environment, which will degrade photoelectric sensitive parameters and bring in visual noise, embodied in a decrease of signal-to-noise ratio of the camera. This study carried out the experiments of CMOS Image Sensor and camera system under γ -ray irradiation, analyzed the degradation mechanism of dark current and quantum efficiency of CMOS image sensor under γ -ray radiation, and analysis their impact mechanism on signal-to-noise ratio of the camera. A quantitative evaluation formula was established to evaluate the impact of dark current and quantum efficiency of the CMOS image sensor on signal-to-noise ratio of camera in γ -ray radiation environment. This study provides the theoretical basis for the evaluation of the anti-radiation camera operating under strong nuclear radiation environment and contributes to the future development of nuclear industry.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"129 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0