Journal of Nanoelectronics and Optoelectronics最新文献_第7页

Meta Analytic Review on Recent Advancements of Class AB Power Amplifiers AB类功率放大器最新进展的元分析综述

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3452

Shikha Soni, Vandana Niranjan, Ashwni Kumar

引用次数: 0

Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application 基于片上增益补偿技术的高精度温度传感器设计

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-07-01 DOI: 10.1166/jno.2023.3454

Le Luo

{"title":"Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application","authors":"Le Luo","doi":"10.1166/jno.2023.3454","DOIUrl":"https://doi.org/10.1166/jno.2023.3454","url":null,"abstract":"The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical value. Addressing these challenges, this study systematically investigates on-chip complementary metal-oxide-semiconductor (CMOS) temperature sensors based on distinct signal domains processed by temperature readout circuits. Specifically, the research commences by analyzing the issues of several degeneracy points in the front-end circuit of a bipolar junction transistor (BJT) temperature sensor with current gain compensation technology. To address the intricate design challenges in advanced technologies and calibration complexities in industrial applications, dynamic component matching, current gain compensation, and chopper stabilization are harnessed. A novel dynamic current gain canceling technique for temperature readout is introduced, enhancing temperature measurement accuracy without incurring additional power consumption or area overhead. Ultimately, an all-digital CMOS temperature sensor is realized using the SMIC 55 nm CMOS process. Occupying a mere 0.29 mm2 of core area, the design operates efficiently across a wide supply voltage range of 1.2 V to 3.6 V. Covering a temperature spectrum from −40 °C to 125 °C, the sensor demonstrates a calibration error of just ±0.7 °C. This achievement is attributed to the incorporation of the proposed dynamic current gain compensation technique.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of New LED Curtain Wall Controller and Its Effect in Architectural Decoration 新型LED幕墙控制器的设计及其在建筑装饰中的效果

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3446

Rongrong Cui

{"title":"Design of New LED Curtain Wall Controller and Its Effect in Architectural Decoration","authors":"Rongrong Cui","doi":"10.1166/jno.2023.3446","DOIUrl":"https://doi.org/10.1166/jno.2023.3446","url":null,"abstract":"In recent years, LED with high brightness or ultra-high brightness has appeared. Because of its low production cost, it has been widely used. Compared with other display media, LED has the advantages of rich display content, wide dynamic range, vivid picture, no pollution, long life, etc., so it is used in building curtain wall facade decoration. This research designs LED curtain wall control system, the use of SD600 chip dimming control of LED, the use of absorbing current mode LED drive, further design of single SD600 chip application circuit, multi-SD600 chip application circuit. LED curtain wall display text need to design the corresponding graphic processing hardware, the hardware is composed of ARM microprocessor LPC2210 and its related peripheral circuits. The core chip of the LPC2210 processor chip needs 1.8 V working voltage, and the I/O interface voltage is 3.3 V, so it is necessary to design the corresponding power circuit; The system clock is adjusted through the internal PLL circuit to make the system run faster and design its crystal oscillator circuit; The power monitoring chip CAT1025JI-30 is adopted to build reset circuit, 20-pin interface type JTAG interface circuit; It is considered that the UARTO interface can’t be directly connected with the RS232 interface of PC, the MAX3232 chip is introduced for level conversion, and the serial interface circuit based on LPC2210 is designed. In the experiment, the new technology is used for outdoor lighting LED curtain wall construction, and the development tool uses the ADS1.2 provided by ARM company. The μ C/OS-II embedded operating system is introduced to control the graphic processing hardware resources, reading the file from the SD card, and writing the text file and BMP file into the three-dimensional array, the corresponding text and pattern effect are displayed in the LED curtain wall.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135142791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Sliding Mode Controller Based on 7 nm Gate Logic 基于7nm门逻辑的滑模控制器设计

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3440

Li Yan, Liang Wenbin, Liao Jie, Yu Xian

引用次数: 0

Track Unevenness Prediction Based on Static Track Inspection Data Matching 基于静态轨道检测数据匹配的轨道不均匀度预测

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3439

Jianpu Xi, Changle Zhou, Xuetao Qiao, Zhuolin Zhou, Laihua Luo, Qing Yang, Zexiang Zhao

引用次数: 0

Research of Low Power Humidity Sensor Based on Complementary Metal Oxide Semiconductor Technology in Power Monitoring 基于互补金属氧化物半导体技术的低功耗湿度传感器在电力监测中的研究

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3441

Chen Xiaoyan, Yu Xian

{"title":"Research of Low Power Humidity Sensor Based on Complementary Metal Oxide Semiconductor Technology in Power Monitoring","authors":"Chen Xiaoyan, Yu Xian","doi":"10.1166/jno.2023.3441","DOIUrl":"https://doi.org/10.1166/jno.2023.3441","url":null,"abstract":"With the decrease of the size of semiconductor, the humidity sensor can be miniaturized and integrated by CMOS technology, and the humidity sensor chip can be made in large scale and low cost. In this paper, the technology structure of integrated capacitive humidity sensor chip is designed and fabricated by using UMC40nm semiconductor technology, it provides a reference for realizing the highly integrated technology of humidity sensor. This paper also analyzes the common micro-capacitance detection methods of humidity sensor, and combines the advantages of capacitor charge-discharge and pulse-width output stability, easy modulation and easy digital system interface, etc., a novel CMOS capacitive humidity sensor micro-capacitance detection circuit is designed by using UMC40nm semiconductor technology. The CMOS circuit can convert the change of capacitance into pulse width, in which the pulse width is linear with the capacitance difference, and can produce periodic pulse sequence and output pulse width modulation signal, it can be easily connected with microcontroller or digital system without adding A/D conversion module to increase circuit complexity and power consumption. The circuit not only can detect the micro-capacitance of humidity sensor, but also has the advantages of low power consumption, linearity, high resolution and digitalization.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135143048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Sensitivity and Wide Detection-Range Refractive-Index Sensor Based on Amplitude Change in Slotted Photonic Crystal Nanobeam Cavity 基于狭缝光子晶体纳米束腔振幅变化的高灵敏度宽探测范围折射率传感器

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3435

M. Al-Hmoud

引用次数: 0

Flexible Inductance Pressure Sensor for Wearable Electronic Devices 用于可穿戴电子设备的柔性电感压力传感器

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3437

Yizhu Wang, Huiqin Qu, Shu Diao

{"title":"Flexible Inductance Pressure Sensor for Wearable Electronic Devices","authors":"Yizhu Wang, Huiqin Qu, Shu Diao","doi":"10.1166/jno.2023.3437","DOIUrl":"https://doi.org/10.1166/jno.2023.3437","url":null,"abstract":"Currently, wearable devices have higher requirements for flexible sensors based on environmental adaptability. Therefore, in order to solve the problem of low sensitivity of current flexible sensors, a new type of flexible inductance pressure sensor is proposed by introducing a ferrite film with high permeability into traditional flexible sensors. The validity and practicability of this method are verified by the research. The results show that the correlation curve of theoretical prediction shows the same trend as the actual curve. Sensor A showed the highest sensitivity of 1.61 kPa −1 ; Under different bending conditions, the sensitivity difference is 0 ∼ 0.20. When the actual external pressure is increased from 0 to 13.6 Pa, the actual change of inductance is about 0.88%. When the excitation voltage is 0.5 V, the actual inductance output value of sensor A increases from the initial 13.22 μ H to 13.26 μ H, and the actual change rate is less than 0.30%. In the application of wearable devices, the keys of wearable electronic keyboard have the maximum output voltage variation value, which is greater than 0.15 V, improving the high stability and practicality of the sensor. It is also practical in wearable human respiratory signal detection equipment. In summary, the flexible inductance pressure sensor designed in this study has high performance and practicability in the application of wearable electronic devices, which is of great significance to the development of actual wearable electronic devices.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135142790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Hierarchical Nickle Oxide Gas Sensor for Monitoring the Volatile Organic Compounds in Car Cabs 一种新型分层氧化镍气体传感器用于监测汽车驾驶室中挥发性有机化合物

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3444

Kuiyuan Guo, Xiaoqin Zhou, Zhiqiang Zhang, Ge Qu

引用次数: 0

Thermal Imaging Detection Device Based on Infrared Photoelectric Sensor and Its Application in Fault Detection of Transformer Bushing Insulation 基于红外光电传感器的热成像检测装置及其在变压器套管绝缘故障检测中的应用

4区工程技术

Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-06-01 DOI: 10.1166/jno.2023.3447

Shengcheng Li, Tao Lu, Lei Zhai, Yi Xiao

{"title":"Thermal Imaging Detection Device Based on Infrared Photoelectric Sensor and Its Application in Fault Detection of Transformer Bushing Insulation","authors":"Shengcheng Li, Tao Lu, Lei Zhai, Yi Xiao","doi":"10.1166/jno.2023.3447","DOIUrl":"https://doi.org/10.1166/jno.2023.3447","url":null,"abstract":"Due to the unique advantages of infrared thermal imaging system compared with visible light, infrared photoelectric sensors can convert the perceived infrared light into electrical signals, which can help people to observe and analyze. Thermal imaging detection devices are developing towards miniaturization, low power consumption and high resolution. According to this requirement, the hardware design of thermal imaging detection system for infrared detection is carried out, and 640×512 uncooled infrared focal plane array is adopted. ADV7390 is selected as the video coding chip, and the low power consumption characteristics of this device are optimized. Selecting reference source+digital potentiometer+operational amplifier as analog bias scheme can make the output analog bias within a certain voltage range. The signal processing method of the detector is improved, that is, divide the voltage and form a differential signal with V REF , and then send it to the ADC chip. In the experiment, DC/DC switching power supply, LDO output voltage and ripple are tested. The results show that the measured voltage value is close to the standard voltage value, the signal voltage is basically around 2 V, and the signal voltage is lower than the signal range fluctuation, which is in line with expectations. It is used to detect transformer bushing insulation defects, and an infrared thermal imaging device is designed to capture bushing insulation defects. Combined with the feature point matching method, the infrared feature distribution of bushing insulation defects is obtained, and the infrared spectrum of the outside of transformer bushing can be obtained through continuous tracking to determine the abnormal temperature position.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135143053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0