Journal of Nanoelectronics and Optoelectronics最新文献

{"title":"A Kirchhoff Plate Model for Longitudinal Vibration Analysis of Restrained Nanoplate Including Thermal Effects","authors":"Amira Mohamed Hussin","doi":"10.1166/jno.2023.3485","DOIUrl":"https://doi.org/10.1166/jno.2023.3485","url":null,"abstract":"This work attempts to apply the Kirchhoff plate theory to find out the vibrational analyses of a nanoplate incorporating thermal effects. The effects of thermal environments on the natural frequency of longitudinal vibration of restrained nanomaterials, especially for restrained nanoplates, have not been investigated, and most of the previous research has been carried out for unrestrained nanoplates. Therefore, it must be emphasized that the vibrations of restrained nanoplate, including thermal effects, are novel and applicable to the nanodevices, in which nanoplates act as the main structure of the nanocomposite. A novel motion and frequency equation are derived using the Kirchhoff plate model. The present study illustrates that a nanoplate’s longitudinal vibration characteristics strongly depend on the temperature change and stiffness coefficients. The numerical results clearly show that the longitudinal natural frequencies of the nanoplate are less than unity for both cases of low and high temperatures. This means that applying the Kirchhoff plate model for restrained nanoplate analysis would lead to an over-prediction of the frequency if the small thermal stress effect is neglected. Finally, the investigation of the restrained and thermal impact on longitudinal vibration of nanoplates may be used as a valuable reference for the application and the design of nanoelectronics and nano-drives devices, nano-oscillators, and nano-sensors, in which nanoplates act as essential elements.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139343757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of YBa2Cu3O7-y Bulk Superconductor Through Melt Growth","authors":"Sang Heon Lee","doi":"10.1166/jno.2023.3488","DOIUrl":"https://doi.org/10.1166/jno.2023.3488","url":null,"abstract":"A YBa2Cu3O7-y bulk with the crystal orientation identical with that of single seed was grown from the seed by the application of melt growth, wherein YBa2Cu3O7-y superconductive green compact was placed on the upper part of Sm 123 superconductive seed single crystal. Field cooling was employed as the condition for the measuring magnetic levitation; it was measured at the temperature of liquid nitrogen, utilizing a Nd–Fe-B permanent magnet with the force of 3.86 kG. The magnetic levitation measurements yielded values of 23.537 N on the surface of the upper part and 30.562 N at the bottom of superconductive bulk magnet. The trapped magnetic forces on the surfaces of superconducting specimens were measured using a permanent magnet with a surface magnetic force of 5.25 kG. The measurements yielded values of 1.74 kG on the upper surface and 1.82 kG at the bottom of the superconducting bulk magnet. Superconducting single crystals were grown from specimens obtained from the upper and bottom parts of the bulk magnet. These specimens were prepared using the melt reaction process. The superconducting properties, such as magnetic levitation and trapped magnetic force, were found to be higher in the region that came into contact with the seed crystal.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139344891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solid-State Emissive Carbon Quantum Dots (CQDs) with a Long Wavelength Emission","authors":"Al Masri Walaa, Mumtaz Ali, Al-Hartomy Omar, S. Wageh","doi":"10.1166/jno.2023.3476","DOIUrl":"https://doi.org/10.1166/jno.2023.3476","url":null,"abstract":"Carbon quantum dots (CQDs)—growing stars of the nanocarbon family—have received attention owing to their intriguing photoluminescence (PL), stability, and biocompatibility. However, CQDs may suffer from serious aggregation-caused quenching (ACQ) of PL, specifically in powder or thin film form. Moreover, most engineering applications are solid-state; therefore, it is important to design solid-state emissive CQDs, potentially defeating ACQ. Previous reviews highlighted the strategies for solid-state emissive CQDs; however, less focus has been given to CQDs with emissions at longer wavelengths. This review summarizes recent advances (specifically in the last two years), focusing on long wavelengths, including yellow-, orange-, and red-emissive fluorescence. Furthermore, the synthesis method, quantum yield, and mechanism of fluorescence are explained. In addition, a detailed summary of synthesis parameters and their role in emission tuning is highlighted. Finally, the future directions and potential applications of solid-state CQDs for emerging applications were discussed.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unsupervised Classification of Non-Gaussian Terrain Based on Polarimetric Decomposition","authors":"Zhi-Zhong Huang, Lin Zheng, Wan-Jun Yin","doi":"10.1166/jno.2023.3465","DOIUrl":"https://doi.org/10.1166/jno.2023.3465","url":null,"abstract":"Polarimetric synthetic aperture radar (PolSAR) can provide complete polarization property of terrain. Terrain classification is the most common application of PolSAR data. In this paper, an unsupervised clustering algorithm based on Freeman-Durden decomposition (FDD) and a non-Gaussian\u0000 K-Wishart distribution classifier is proposed. This algorithm combines an advanced statistical distribution with spatial polarization scattering information of multi-looks PolSAR data. We use the prior probability characteristics of the Markov random field model to adaptively adjust\u0000 the cluster center to make the classification more accurate. The experiment result shows that the proposed algorithm based on non-Gaussian models can better retain the polarization information of the target and the clustering accuracy was effectively improved on the real SAR images.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and Properties of ZnO Nanofiber Flexible Pressure Sensor","authors":"Zhang Chenwei, Qian Lijun, Lin Fangyuan, Shenglin Wen, Wen Zeng, Mohamed Hashem","doi":"10.1166/jno.2023.3474","DOIUrl":"https://doi.org/10.1166/jno.2023.3474","url":null,"abstract":"With the development of the new four modernization of automobiles, the intelligent pace of the global automobile industry has accelerated. In order to meet the demand and help the development, this paper proposes a preparation method of ZnO nanofiber flexible pressure sensor based on electrospinning technology. ZnO nanofibers prepared by electrospinning are used as the pressure-sensitive active layer, which is placed on the fork guide electric layer, and then packaged with PDMS film for protection. After preparation, a series of performance tests were carried out successively. It was observed by SEM that the pressure-sensitive active layer was long fiber with uniform distribution. XRD pattern is consistent with standard card. The results of sensitivity test and human motion sensing test show that the sensor has the characteristics of high sensitivity, short response time and stable signal sensing, which can meet the actual needs and is expected to be widely used in the field of automotive intelligent cockpit.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Performance Analysis of Monitoring System for Seed Metering and Fertilization of Precision Seeder Based on Photoelectric Sensor","authors":"Jia Liu, Yan Shi, Desheng Meng, Zhongfeng Liu","doi":"10.1166/jno.2023.3466","DOIUrl":"https://doi.org/10.1166/jno.2023.3466","url":null,"abstract":"In order to realize accurate monitoring of wheat sowing and fertilization process and ensure efficient and reliable sowing operation, an integrated monitoring system of wheat sowing and fertilization based on variable-distance photoelectric sensor is designed. The monitoring system includes the hardware circuit of STM32F103 lower computer and the human-machine interface of the upper computer touch screen. The hardware circuit of the lower computer is composed of OH-1021 photoelectric sensor, signal shaping and amplifying circuit, encoder speed acquisition module, communication module, central processor, and peripheral circuits. The information of seed fertilizer flow and seed fertilizer shaft rotation is obtained through the reflective photoelectric sensor and rotary encoder respectively to judge the running state of sowing. The information is transmitted to the human-machine interface of the upper computer touch screen of MCGS by means of Modbus communication protocol. In the experimental species, the single seed monitoring accuracy of the monitoring system reaches 98.6%. Compared with the test results of the performance test bench of the seed metering device, the monitoring error of the monitoring system is less than 0.3%, the monitoring error of the replay rate is less than 0.6%, and the monitoring accuracy of the seeding amount is greater than 94%. The simulation results of the seed metering monitoring circuit of the lower computer show that the detection distance of the amplifier circuit to the photoelectric sensor of the seed tube changes by [4 mm, 7 mm]. The communication test results of the upper and lower computers show that the accuracy of data transmission reaches 100%, the monitoring system shows that the accuracy of fault detection exceeds 90%, and the response time of lacking, blocking, and leaking is less than 0.3 s. The monitoring system realizes high-precision monitoring of wheat seed metering and fertilization, which is helpful to improve the quality of wheat planting.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced High-Performance Aqueous Zinc Ion Batteries with Copper-Doped <i>α</i>-MnO₂ Nanosheets Cathodes","authors":"Gang Li, Hai Liang, Haifang Ren, Linhan Zhou, Mohamed Hashem","doi":"10.1166/jno.2023.3484","DOIUrl":"https://doi.org/10.1166/jno.2023.3484","url":null,"abstract":"Aqueous zinc ion batteries (ZIBs) have garnered considerable interest due to their eco-friendly nature, cost-efficiency, and remarkable safety features, making them a compelling contender for next-generation energy storage systems. Within the extensive array of cathode materials investigated for ZIBs, manganese-based materials stand out for their notable attributes, including low toxicity and high voltage. Nevertheless, their widespread application has been impeded by challenges related to poor cycling stability, low electrical conductivity, and intricate energy storage mechanisms. In this study, we present a novel approach to address these challenges by synthesizing copper-doped α -MnO 2 nanosheets through a facile hydrothermal route. The resulting cathode material exhibits remarkable electrochemical properties when integrated into Zn/MnO 2 batteries. At a low current density of 0.1 Ag −1 , these batteries demonstrate an impressive reversible capacity of 445 mAh g −1 , signifying their substantial energy storage capabilities. Furthermore, even when subjected to a demanding high current density of 1 Ag −1 , they exhibit an exceptional cycling life of up to 1000 cycles, highlighting the enhanced durability of the copper-doped α -MnO 2 nanowire cathode. This research paves the way for the development of high-performance Zn/MnO 2 batteries, leveraging the advantages of manganese-based cathode materials while mitigating their inherent limitations. These findings represent a significant step forward in the development of environmentally sustainable and economically viable energy storage solutions, offering hope for a more sustainable energy future.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Triboelectric Nanogenerators for Self-Powered Systems in Flexible Electronic Devices","authors":"Xiangxiang Luo, Feng Li, Chengfang Qiao, Fei Yuan, Chunsheng Zhou","doi":"10.1166/jno.2023.3464","DOIUrl":"https://doi.org/10.1166/jno.2023.3464","url":null,"abstract":"As the number of flexible electronic devices grows dramatically, the energy harvesting and storage technology of flexible electronic devices also urgently needs to advance. Traditional flexible electronic devices are battery-powered, which not only suffer from short endurance and large size, but also do not meet the new era requirement of environmental protection and energy saving. Therefore, this study investigates the self-powered system in flexible electronic devices using the Triboelectric Nanogenerator (TENG) technology. The research innovatively optimizes the TENG, proposes a liquid metal triboelectric Nanogenerator (LMTENG), and optimizes the optimal path selection problem. In the test results, the optimal output power of 567.3 μ W is obtained when the contact frequency is 2 Hz for an external load of 15 MΩ. By comparing with the current TENG, the LMTENG significantly improves the optimal output power. On the other hand, the LMTENG is able to respond to a pressure of 22 kPa and maintain normal performance at 50% stretching. The study provides new ideas for improvement of triboelectric nanogenerators and also contributes to the optimization of flexible electronic devices.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Analysis of Static Random-Access Memory FinFET Circuit Using Self Controlled Voltage Level Controller","authors":"VishnuVardhan Rao Gadipudi, A. Kavitha","doi":"10.1166/jno.2023.3470","DOIUrl":"https://doi.org/10.1166/jno.2023.3470","url":null,"abstract":"Researchers in the field of device research are always searching for a device that meets certain criteria, such as having low leakage and a low threshold voltage, without sacrificing performance. This pursuit has led to the development of numerous gate architectures. As a result of the enormous size of the static random-access memory (SRAM), its yield and leakage power consumption account for the majority of the chip’s total yield and leakage power consumption respectively. However, as CMOS technology continues to grow in the sub-65 nanometer domain to lower the cost of transistors and the dynamic power, it presents a number of issues on the design of SRAM. In this paper, a 6T SRAM cell with differential write and single ended read operations working in the near-threshold region is proposed. The structure is based on modifying a recently proposed 6T cell which uses high and low VTH transistors to improve the read and write stability. Also, the changes of cell parameters when the temperature rises from 40 °C to 100 °C are investigated. Finally, the write margin as well as the read and hold SNMs of the cell are studied at two supply voltages of 400 mV and 500 mV.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Impact of a Thick-Doping-Layer on the Charge Collection Efficiency in the P-Type Silicon Substrate of EBCMOS Devices","authors":"Xulei Qin, Qidong Shi, Feng Shi, Ye Li, De Song","doi":"10.1166/jno.2023.3475","DOIUrl":"https://doi.org/10.1166/jno.2023.3475","url":null,"abstract":"In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}