Journal of Nanoelectronics and Optoelectronics最新文献

{"title":"The Impact of a Thick-Doping-Layer on the Charge Collection Efficiency in the P-Type Silicon Substrate of EBCMOS Devices","authors":"Xulei Qin, Qidong Shi, Feng Shi, Ye Li, De Song","doi":"10.1166/jno.2023.3475","DOIUrl":"https://doi.org/10.1166/jno.2023.3475","url":null,"abstract":"In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Short Distance Detection and Control System Based on Photoelectric Sensor and Its Application in Target Detection of Handling Robot","authors":"Yaping Lu","doi":"10.1166/jno.2023.3467","DOIUrl":"https://doi.org/10.1166/jno.2023.3467","url":null,"abstract":"The photoelectric sensor is an electronic device that is widely used in industrial automation processes. The device uses light to detect whether an object exists. The photoelectric sensor detection control system is the core part of the photoelectric sensor. The system includes sensor processing chip, control circuit, detection optical structure and automatic teaching control algorithm. In this research, the core control chip of the automatic teaching system and the core part of the control circuit of the short-distance photoelectric sensor are set up. The modular circuit around the above chip is designed. The optical structure of the sensor is designed by Position sensitive sensor (PSD) photoelectric accessories and triangulation method. Meanwhile, the core circuit control chip (CSP) is applied to complete the basic functions of the short-distance photoelectric sensor. Among them, the optical structure is designed to collect and process the optical signal of the detected object. Based on this, the I/V conversion is needed after collecting the optical signal by PSD, and then the signal processing is carried out. The fuzzy PID control model is used to solve the problem that the control object cannot accurately establish the mathematical model. The designed photoelectric sensor is used for the handling robot, and the D-H mathematical model of the handling robot is established. The Robotics toolbox provided by MatLab is used to simulate the movement of the robot, and the sensor is used to detect the target of the robot grabbing. The experimental results show that the sensor uploads the coordinate information of the object to be grabbed to the software interface, and the handling robot can accurately grab the object with the help of the photoelectric sensor, and place it in the corresponding position according to the appearance color of different objects to be grabbed.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A High Efficiency Grating Coupler Based on Hybrid Si-Lithium Niobate on Insulator Platform","authors":"Meng Liu, Xuan Zheng, Zisu Gong, Juan Li, Wenfei Liu, Renqi Gao","doi":"10.1166/jno.2023.3461","DOIUrl":"https://doi.org/10.1166/jno.2023.3461","url":null,"abstract":"In this paper, a high efficiency grating coupler based on the Si thin film on Lithium Niobate (LiNbO 3 , LN) on insulator (LNOI) platform (Si-LNOI) was developed and analyzed. Two-dimensional finite-different time-domain (2D-FDTD) simulations were performed to optimize the grating structure. Those parameters (e.g., the layer thickness of SiO 2 , LNOI, and Si) and grating configuration were numerically investigated for the coupling efficiency. A coupling efficiency exceeding 98% at λ =1550 nm was obtained for TE polarization. Furthermore, the deviation tolerances of the grating period, the filling factor, the etching depth, and the layer thickness of the Si waveguide layer were studied systematically. The results indicated a high deviation tolerance. The grating coupler presented in this study could be achieved without adding fabrication steps other than etching, thereby showing high coupling efficiency and low fabrication complexity.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation of Gallium Nitride/Aluminum Nitride-Based Triple Barrier Quantum Region for ULTRARAM Application","authors":"Safdar Mehmood, Jinshun Bi, Mengxin Liu, Yu Zhang","doi":"10.1166/jno.2023.3468","DOIUrl":"https://doi.org/10.1166/jno.2023.3468","url":null,"abstract":"ULTRARAM is a low-power, high-speed, nonvolatile compound semiconductor memory device that uses triple barrier resonance tunneling (TBRT) to store electrical charge in a floating gate. Using a self-consistent solution of Schrödinger-Poisson equations, we investigated the electrical properties, transmission spectra, and electron dynamics across GaN/AlN TBRT region for the ULTRARAM application. The simulation results show that GaN/AlN exhibits tunable electrical properties by using a TBRT region of variable thickness. Successive optimization and testing of various thicknesses significantly altered the transmission across multiple barriers and localization of electrons in the quantum wells. The program/erase (P/E) operation of GaN/AlN-based ULTRARAM in a triple barrier structure is accomplished at less than 2 V. The device’s excellent nonvolatility is due to the conduction band offset (CBO) of GaN/AlN heterostructure providing a large energy barrier (2.1 eV), which prevents electrons from escaping from the floating gate. Because of the low voltage operation and small capacitance, the switching energy consumption is much lower than that of a standard floating gate Flash.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on 3D Point Cloud Classification Based on Density-Based Spatial Clustering of Algorithm with Noise","authors":"Keren He, Hang Chen","doi":"10.1166/jno.2023.3469","DOIUrl":"https://doi.org/10.1166/jno.2023.3469","url":null,"abstract":"The classification of three-dimensional point clouds is a complex task because of its disorder and uneven density. This paper proposes that in the point-cloud preprocessing stage, the Density-Based Spatial Clustering of Algorithm with Noise (DBSCAN) is added to cluster the three-dimensional point cloud, then the clustering results are extracted through the PointNet deep learning network to extract the characteristics of the local area, thus outputting the classification results of the point cloud. This method can not only reflect the feature distribution of point cloud in three-dimensional space, but also can be divided into several classes according to the different shape features of point cloud. Verified in the ModelNet10 and ModelNet40 point cloud dataset, the classification accuracy of this method on both ModelNet10 and ModelNet40 can reach more than 92.5%.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring Optical Nanofibers for Atom-Photon Hybrid Quantum Systems: Chirality Effects and Optical Forces","authors":"Haya Mohammed Aldawsari, Smail Bougouffa","doi":"10.1166/jno.2023.3463","DOIUrl":"https://doi.org/10.1166/jno.2023.3463","url":null,"abstract":"Recent advancements have revealed the growing effectiveness of optical nanofibers in enabling the implementation of atom-photon hybrid quantum systems. These nanofibers serve as non-intrusive tools for probing cold atoms, offering a unique approach to circumvent the limitations imposed by the Rayleigh domain, thereby achieving increased intensities in a beam of light over long distances. This study investigates the interaction between the atom and light, focusing on the dipole transition in sodium atoms near a nanofiber. Notably, we uncover the influence of the direction of light propagation, known as the optical chirality effect, on the spatial distribution of the steady-state density matrix elements. Furthermore, we examine the optical forces acting on a two-level atom during the 3 2 S 1/2 →3 2 P 3/2 transition in sodium. Our findings demonstrate that optical chirality’s effect significantly impacts the magnitude of these optical forces. The concept of optical chirality holds great promise for advancing technology and enhancing our understanding of atomic behavior. The numerical results presented in this work are based on experimental parameters within a realistic range.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications","authors":"Rajdevinder Kaur Sidhu, Jagpal Singh Ubhi, Alpana Agarwal, Balwinder Raj","doi":"10.1166/jno.2023.3460","DOIUrl":"https://doi.org/10.1166/jno.2023.3460","url":null,"abstract":"The demand for low power consumption in modern electronic devices has led to the development of various technologies, including usage of different materials such as Si and GaAs. In this paper, we present a design and comparative analysis of Si and GaAs MOSFETs for low power applications. The analysis includes the electrical characteristics, performance parameters, and power consumption of both devices. The Si MOSFET and GaAs MOSFET are simulated and analyzed using TCAD tools, and the results are compared. The simulation results show that the GaAs MOSFET has a higher transconductance (gm) compared to the Si MOSFET. However, the Si MOSFET has a lower gate leakage current (Ig) and lower power consumption at low operating frequencies. We also investigate the effect of scaling on the performance and power consumption of both MOSFETs. The results show that scaling improves the performance of both devices, but the power consumption increases as the device dimensions are reduced. The comparative analysis of Si and GaAs MOSFETs for low power applications provides useful insights into the selection of suitable MOSFET technology for specific applications. The results show that both Si and GaAs MOSFETs have their advantages and disadvantages, and the choice depends on the application requirements.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sr²⁺ and Co²⁺ Co-Doped LaAlO₃ Leads to Synergistic Enhancement of Electric Heating and Infrared Radiation Abilities for MEMS Light Source Application","authors":"Haigang Hou, Xiaoyun Sun, Dongliang Zhang, Jian Yang, Shahid Hussain, Mohamed Hashem, Guiwu Liu, Guanjun Qiao","doi":"10.1166/jno.2023.3472","DOIUrl":"https://doi.org/10.1166/jno.2023.3472","url":null,"abstract":"The MEMS infrared light source is one of the core components of the NDIR gas sensor, and its thermal stability, emissivity, and modulation characteristics all have a crucial impact on the accuracy and sensitivity of the entire device for gas detection. This paper provides a detailed analysis of the structure and working principle of MEMS light source chips, and starting from the idea of multi-functional materials, proposes a new MEMS infrared light source chip design concept for achieving high efficiency the electric heating and thermal to light conversions simultaneously by a monolayer of multi-functional material. Based on this concept, La 0.7 Sr 0.3 Al 0.5 Co 0.5 O 3 material was successfully prepared used a chemical co-precipitation method and confirmed by XRD. By doping the Sr 2+ and Co 2+ at the A and B sites of LaAlO 3 material separately, the approximately insulating LaAlO 3 material has a certain degree of conductivity and electric heating ability. Moreover, the co-doping of Sr 2+ and Co 2+ also makes LaAlO 3 material exhibit excellent infrared radiation ability in the range of 2.5–25 μ m. Based on lattice structure of La 0.7 Sr 0.3 Al 0.5 Co 0.5 O 3 and SEM research, the principle of enhancing conductivity and emissivity has been analyzed in detail.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Study of Spontaneous Emission Spectra in GaAsBi/GaAs Quantum Wells","authors":"Rong Nie, DongFeng Liu","doi":"10.1166/jno.2023.3458","DOIUrl":"https://doi.org/10.1166/jno.2023.3458","url":null,"abstract":"GaAsBi/GaAs heterojunctions have a type II band arrangement, and the band structure energy of GaAs alloys with diluted Bi content provides a wide range for designing effective band gaps. In this paper, we calculate the electronic energy band structure of GaAsBi/GaAs quantum wells (QWs) with different Bi concentrations under the 8-band K · P model. The calculated results show that the Bi concentration has a great influence on the band gap, valence band, conduction band, and other structures of GaAsBi/GaAs QWs. Based on the band structure, we make systematical simulations on the effects of different quantum well widths, different Bi concentrations, different carrier densities, and different temperatures on the spontaneous emission spectra (SES) of GaAsBi/GaAs QWs. We find that the peaks of SES reduce with the increase of temperature and well width of the quantum well structure. The full width at half maximum (FWHM) of SES at 300 K is 0.1 eV, which is much broader than that at 100 K. The increasing Bi concentration is found to give rise to the blue shift of SES. Finally, the carrier concentration in the quantum well is found to be an important factor that can enhance the SES peak values. The findings in this work are helpful in the design of GaAsBi/GaAs-based optoelectronic devices.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intelligent Knife Switch Contact Status Monitoring Based on Special-Shaped Beam Fiber Bragg Grating Electromechanical Sensor","authors":"Huarong Zeng, Xiaohong Ma, Kui Xu, Qi Yang, Weiling Yin","doi":"10.1166/jno.2023.3449","DOIUrl":"https://doi.org/10.1166/jno.2023.3449","url":null,"abstract":"To ensure the safety of people’s lives and property, the accurate measurement of various small vibrations is of great significance. Using gratings as sensitive components to make optical fiber sensors is a kind of electromechanical vibration measurement device with rapid development. In this study, a special-shaped beam Fiber Bragg Grating (FBG) electromechanical vibration sensor with sensitized grooves is proposed based on equal-strength cantilever beams. The composition and implementation principle of FBG sensing system are expounded, and how to realize the signal induction of FBG under vibration conditions is further analyzed. According to the intrinsic relationship between sensitivity coefficient and natural frequency in vibration sensor, the sensor head structure composed of structural parameters, such as equal-strength beam length of 73 mm, bottom width of 14 mm, and thickness of 5 mm, is finally selected. With the help of ANSYS software to calculate the natural frequency of the sensing head as a theoretical reference value, and SS304 stainless steel is selected as the cantilever beam to obtain a good vibration sensing effect. In the test, the acceleration is set to 0.35 G, and the pulse generates a sinusoidal signal of 0–10000 Hz. The natural frequency of the sensing head is 182 Hz, and the sensitivity is 100 mV/G, which is only small error with the theoretical analysis value calculated by ANSYS. The acceleration of the sensing head is changed, and different degrees of vibration are generated. The results show that the change of output center wavelength has a linear relationship with the acceleration change. The introduction of sensitized grooved special-shaped beams helps to improve the sensitivity of the device to perceive vibration. It is used for the monitoring of the contact status of the intelligent knife switch. The results show that the designed photoelectric grating electromechanical sensor measurement has good repeatability, and the wavelength of the reflection interrogator will suddenly increase and decrease rapidly with obvious regularity.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}