Journal of Nanoelectronics and Optoelectronics最新文献

{"title":"Exploring Optical Nanofibers for Atom-Photon Hybrid Quantum Systems: Chirality Effects and Optical Forces","authors":"Haya Mohammed Aldawsari, Smail Bougouffa","doi":"10.1166/jno.2023.3463","DOIUrl":"https://doi.org/10.1166/jno.2023.3463","url":null,"abstract":"Recent advancements have revealed the growing effectiveness of optical nanofibers in enabling the implementation of atom-photon hybrid quantum systems. These nanofibers serve as non-intrusive tools for probing cold atoms, offering a unique approach to circumvent the limitations imposed by the Rayleigh domain, thereby achieving increased intensities in a beam of light over long distances. This study investigates the interaction between the atom and light, focusing on the dipole transition in sodium atoms near a nanofiber. Notably, we uncover the influence of the direction of light propagation, known as the optical chirality effect, on the spatial distribution of the steady-state density matrix elements. Furthermore, we examine the optical forces acting on a two-level atom during the 3 2 S 1/2 →3 2 P 3/2 transition in sodium. Our findings demonstrate that optical chirality’s effect significantly impacts the magnitude of these optical forces. The concept of optical chirality holds great promise for advancing technology and enhancing our understanding of atomic behavior. The numerical results presented in this work are based on experimental parameters within a realistic range.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications","authors":"Rajdevinder Kaur Sidhu, Jagpal Singh Ubhi, Alpana Agarwal, Balwinder Raj","doi":"10.1166/jno.2023.3460","DOIUrl":"https://doi.org/10.1166/jno.2023.3460","url":null,"abstract":"The demand for low power consumption in modern electronic devices has led to the development of various technologies, including usage of different materials such as Si and GaAs. In this paper, we present a design and comparative analysis of Si and GaAs MOSFETs for low power applications. The analysis includes the electrical characteristics, performance parameters, and power consumption of both devices. The Si MOSFET and GaAs MOSFET are simulated and analyzed using TCAD tools, and the results are compared. The simulation results show that the GaAs MOSFET has a higher transconductance (gm) compared to the Si MOSFET. However, the Si MOSFET has a lower gate leakage current (Ig) and lower power consumption at low operating frequencies. We also investigate the effect of scaling on the performance and power consumption of both MOSFETs. The results show that scaling improves the performance of both devices, but the power consumption increases as the device dimensions are reduced. The comparative analysis of Si and GaAs MOSFETs for low power applications provides useful insights into the selection of suitable MOSFET technology for specific applications. The results show that both Si and GaAs MOSFETs have their advantages and disadvantages, and the choice depends on the application requirements.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sr²⁺ and Co²⁺ Co-Doped LaAlO₃ Leads to Synergistic Enhancement of Electric Heating and Infrared Radiation Abilities for MEMS Light Source Application","authors":"Haigang Hou, Xiaoyun Sun, Dongliang Zhang, Jian Yang, Shahid Hussain, Mohamed Hashem, Guiwu Liu, Guanjun Qiao","doi":"10.1166/jno.2023.3472","DOIUrl":"https://doi.org/10.1166/jno.2023.3472","url":null,"abstract":"The MEMS infrared light source is one of the core components of the NDIR gas sensor, and its thermal stability, emissivity, and modulation characteristics all have a crucial impact on the accuracy and sensitivity of the entire device for gas detection. This paper provides a detailed analysis of the structure and working principle of MEMS light source chips, and starting from the idea of multi-functional materials, proposes a new MEMS infrared light source chip design concept for achieving high efficiency the electric heating and thermal to light conversions simultaneously by a monolayer of multi-functional material. Based on this concept, La 0.7 Sr 0.3 Al 0.5 Co 0.5 O 3 material was successfully prepared used a chemical co-precipitation method and confirmed by XRD. By doping the Sr 2+ and Co 2+ at the A and B sites of LaAlO 3 material separately, the approximately insulating LaAlO 3 material has a certain degree of conductivity and electric heating ability. Moreover, the co-doping of Sr 2+ and Co 2+ also makes LaAlO 3 material exhibit excellent infrared radiation ability in the range of 2.5–25 μ m. Based on lattice structure of La 0.7 Sr 0.3 Al 0.5 Co 0.5 O 3 and SEM research, the principle of enhancing conductivity and emissivity has been analyzed in detail.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Study of Spontaneous Emission Spectra in GaAsBi/GaAs Quantum Wells","authors":"Rong Nie, DongFeng Liu","doi":"10.1166/jno.2023.3458","DOIUrl":"https://doi.org/10.1166/jno.2023.3458","url":null,"abstract":"GaAsBi/GaAs heterojunctions have a type II band arrangement, and the band structure energy of GaAs alloys with diluted Bi content provides a wide range for designing effective band gaps. In this paper, we calculate the electronic energy band structure of GaAsBi/GaAs quantum wells (QWs) with different Bi concentrations under the 8-band K · P model. The calculated results show that the Bi concentration has a great influence on the band gap, valence band, conduction band, and other structures of GaAsBi/GaAs QWs. Based on the band structure, we make systematical simulations on the effects of different quantum well widths, different Bi concentrations, different carrier densities, and different temperatures on the spontaneous emission spectra (SES) of GaAsBi/GaAs QWs. We find that the peaks of SES reduce with the increase of temperature and well width of the quantum well structure. The full width at half maximum (FWHM) of SES at 300 K is 0.1 eV, which is much broader than that at 100 K. The increasing Bi concentration is found to give rise to the blue shift of SES. Finally, the carrier concentration in the quantum well is found to be an important factor that can enhance the SES peak values. The findings in this work are helpful in the design of GaAsBi/GaAs-based optoelectronic devices.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intelligent Knife Switch Contact Status Monitoring Based on Special-Shaped Beam Fiber Bragg Grating Electromechanical Sensor","authors":"Huarong Zeng, Xiaohong Ma, Kui Xu, Qi Yang, Weiling Yin","doi":"10.1166/jno.2023.3449","DOIUrl":"https://doi.org/10.1166/jno.2023.3449","url":null,"abstract":"To ensure the safety of people’s lives and property, the accurate measurement of various small vibrations is of great significance. Using gratings as sensitive components to make optical fiber sensors is a kind of electromechanical vibration measurement device with rapid development. In this study, a special-shaped beam Fiber Bragg Grating (FBG) electromechanical vibration sensor with sensitized grooves is proposed based on equal-strength cantilever beams. The composition and implementation principle of FBG sensing system are expounded, and how to realize the signal induction of FBG under vibration conditions is further analyzed. According to the intrinsic relationship between sensitivity coefficient and natural frequency in vibration sensor, the sensor head structure composed of structural parameters, such as equal-strength beam length of 73 mm, bottom width of 14 mm, and thickness of 5 mm, is finally selected. With the help of ANSYS software to calculate the natural frequency of the sensing head as a theoretical reference value, and SS304 stainless steel is selected as the cantilever beam to obtain a good vibration sensing effect. In the test, the acceleration is set to 0.35 G, and the pulse generates a sinusoidal signal of 0–10000 Hz. The natural frequency of the sensing head is 182 Hz, and the sensitivity is 100 mV/G, which is only small error with the theoretical analysis value calculated by ANSYS. The acceleration of the sensing head is changed, and different degrees of vibration are generated. The results show that the change of output center wavelength has a linear relationship with the acceleration change. The introduction of sensitized grooved special-shaped beams helps to improve the sensitivity of the device to perceive vibration. It is used for the monitoring of the contact status of the intelligent knife switch. The results show that the designed photoelectric grating electromechanical sensor measurement has good repeatability, and the wavelength of the reflection interrogator will suddenly increase and decrease rapidly with obvious regularity.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Broadband High-Efficiency Solar Absorber Based on Tungsten Hole-Mesh","authors":"Na Li, Chi Zhao, Xin Rao, Bonan Xu, Yuyu Shan, Jingke Zhang, Yiqun Zhang, Guo Liu","doi":"10.1166/jno.2023.3456","DOIUrl":"https://doi.org/10.1166/jno.2023.3456","url":null,"abstract":"Solar energy is widely considered a “green energy” source, and to maximize its utilization, efficient solar absorbers that can absorb solar energy at various optical frequencies are necessary. We report a high-performance, broadband solar absorber made of just two materials –W and Al 2 O 3 . The absorber is composed of three layers, arranged from top to bottom: an Al 2 O 3 dielectric layer, a W hole-mesh layer, and a W substrate layer. Finite difference time domain method analysis simulations demonstrated an ultra-high absorption rate of 97.64% across a wide spectrum of visible and near-infrared light. The high absorption rate is attributed to the combined effects of surface plasmon resonance, cavity resonance, and the high imaginary part of the permittivity of tungsten. Furthermore, we analyzed the influence of the geometric parameters of the W hole-mesh absorber on the absorption performance and explained the physical mechanism of the high absorption rate by analyzing impedance matching. Interestingly, the absorber is insensitive to polarized light and can still maintain a high absorption rate of 90% at an incident angle of 0–60°. Our findings indicate that the W hole-mesh absorber has significant advantages in solar energy harvesting, paving the way for more efficient and cost-effective solar energy technology.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultraviolet Detection Based on AlGaN/GaN Heterojunction Under Low-Temperature","authors":"Lechen Yang, Min Xiong, Wenhua Shi, Baoshun Zhang","doi":"10.1166/jno.2023.3473","DOIUrl":"https://doi.org/10.1166/jno.2023.3473","url":null,"abstract":"We fabricated and tested an ultraviolet metal-semiconductor-metal photodetector based on dual-color AlGaN/GaN heterostructure. The photodetector’s optical responsivity and current-voltage characteristics were investigated. The annealing process significantly improved their optical responsivity and reduced their dark current by two orders of magnitude. The peak responses were 4.255 A/W at 288 nm and 2.929 A/W at 366 nm under a bias of 5 V. We also studied the bias voltage-dependent photoelectricity behaviors of the photodetector at a temperature of 77 K. The rise time and fall time of the photodetector both decrease with the increase of the bias voltage at 77 K.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on the Filling Process of Ultraviolet Nanoimprint Lithography with High-Resolution Stamps","authors":"Hongwen Sun, Heyu Liu, Xiajuan Shen, Lijun Gu, Jingsheng Wang, Ziyi Ma, Dongyang Xie","doi":"10.1166/jno.2023.3483","DOIUrl":"https://doi.org/10.1166/jno.2023.3483","url":null,"abstract":"With the rapid development of the semiconductor industry, the feature size of integrated circuits (ICs) is continuously getting smaller and smaller. Although traditional optical lithography and extreme ultraviolet (EUV) lithography can fabricate products with 5-nm feature size, the production cost is quite high. As a candidate of next-generation lithography, ultraviolet nanoimprint lithography (UV-NIL) can also achieve high-resolution imprints at a lower cost. Based on contact mechanics, the filling mechanism and imprint quality of UV-NIL were examined using high-resolution stamps with different feature sizes of 3 nm, 4 nm, and 5 nm. It was found that UV-NIL could successfully replicate patterns with feature sizes down to 3 nm; however, the imprinting process was more complicated. Among the selected nine stamps, the replications of 4-nm and 5-nm feature sizes had a relatively uniform residual layer and a symmetric contact pressure, whereas the replications of 3-nm feature size had an asymmetric contact pressure, resulting in an asymmetric residual layer. In order to obtain a more uniform residual layer with higher-quality imprinting, the pressure applied to the left and right sides of a stamp should be appropriately changed. The pattern density of a stamp had a certain influence on the contact pressure. As the pattern density increased, the contact pressure tended to be uniform; however, when the pattern density exceeded 0.5, the situation became worse. This research can provide guidance for promoting the development of UV-NIL in the direction of high-resolution pattern replication.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"129 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Novel Radio on Fiber System for Frequency 32-Tupling Millimeter-Wave Generation and Transmission Using Polarization Modulators","authors":"Xin-Qiao Chen, Wen-Yao Ba, Xiao-Rui Liu, Kai-Xian Liu, Si-Yuan Dai, Xu Chen","doi":"10.1166/jno.2023.3462","DOIUrl":"https://doi.org/10.1166/jno.2023.3462","url":null,"abstract":"A new radio on fiber (ROF) scheme for generation and transmission frequency 32-tupling millimeter-wave (MMW) is proposed. At the central station (CS), six PoIMs are used to construct the ±16 order sidebands generator which can generate ±16 order sidebands. The sideband of +16th order is separate out by an optical interleaver from the output of ±16 order sidebands generator first, then the data of down-link signal is modulated on it. At the base station (BS), a portion sideband of −16th order from the down-link optical signal is separted out with a fiber Bragg grating (FBG) first, then the up-link data is modulated on it for carrier reuse. The remaining ±16th order sidebands from the FBG are beat in a photodetector (PD), then the frequency 32-tupling MMW signal with the down-link data is generated. The key part of this system is the ±16th order sideband generator, in which the ±16th order sidebands with the carrier component can be generated by adjusting the amplitudes and initial phases of the radio frequency (RF) signals loaded on the PoIMs, and the carrier can be cancelled by two 1×2 optical coupler with adjustable splitting ratio and 180° optical phase shifter (OPS). The principle of operation to generate frequency 32-tupling is theoretically analyzed and verified by simulation experiments. The optic sideband suppression ratio (OSSR) of the generated sidebands of ±16th order from the theoretical derivation and experiments are 29.974 dB and 29.793 dB, respectively, the RF spurious suppression ratio (RFSSR) of the obtained frequency 32-tupling MMW from theoretical derivation and experiment are 23.960 dB and 23.814 dB, respectively, which verifies the feasibility of our method. The transmission experiments are carried out. For 30 km fiber with 2.5 Gbps data rate, the Q value and power penalty for up-link and down-link are greater than 6 and less than 0.4 dB, respectively.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical Physical Parameters of Fine Particulate Matter Based on Light Scattering Method","authors":"Peng Xie, Juntong Liu, Kechao Chen","doi":"10.1166/jno.2023.3448","DOIUrl":"https://doi.org/10.1166/jno.2023.3448","url":null,"abstract":"Following the Internet, the Internet of Things (IoT) has become another revolutionary technology in recent years. In recent years, Internet of Things technology has been applied to various industries such as agricultural production, intelligent transportation and industrial production, including the wireless system network under the Internet of Things technology. The problem of particulate matter pollution has become more and more concerned. However, how to quickly and accurately detect particulate matter concentration has become a research hotspot. The traditional filter membrane weighing method and ray absorption method have many limitations, which cannot meet the requirements of fast and accurate. The measurement of particle mass concentration by light scattering method is a non-contact detection method of particle mass concentration. In this paper, light scattering methods are combined with the theory of IoT wireless systems to discuss the photophysical parameters of tiny particles, such as particle size and density. This paper mainly studies the formation mechanism, particle detection principle and numerical simulation, and the data intelligent analysis of the optical and physical parameters of the particles. The particle size distribution, average particle size and density were obtained by CCD photosensor experiment. The experimental results show that the optical parameters of different particle sizes are accurate and reliable.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135856172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}