Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)最新文献

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The fringing electric field effect on the short-channel effect threshold voltage of FD SOI NMOS devices with LDD/sidewall oxide spacer structure 边缘电场对LDD/侧壁氧化物间隔层结构FD SOI NMOS器件短通道效应阈值电压的影响
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029144
J. Kuo, Shih-Chia Lin
{"title":"The fringing electric field effect on the short-channel effect threshold voltage of FD SOI NMOS devices with LDD/sidewall oxide spacer structure","authors":"J. Kuo, Shih-Chia Lin","doi":"10.1109/HKEDM.2002.1029144","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029144","url":null,"abstract":"This paper presents the fringing electric field effect on the short-channel effect threshold voltage of fully-depleted (FD) SOI NMOS devices with the lightly-doped drain (LDD)/sidewall oxide spacer structure. It is based on a closed-form analytical model derived from the 2D Poisson's equation and using the conformal mapping technique. Based on the analytical model, as verified by the experimental data and the 2D simulation results, with a lower n-LDD doping density, the fringing electric field effect in the sidewall oxide spacer lowers the short-channel effect.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117131924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical storage disc based on the frequency up-conversion effect from rare earth ions 基于稀土离子上变频效应的光盘
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029170
H. Ho, W. Wong, Shu-yuen Wu, E. Pun
{"title":"Optical storage disc based on the frequency up-conversion effect from rare earth ions","authors":"H. Ho, W. Wong, Shu-yuen Wu, E. Pun","doi":"10.1109/HKEDM.2002.1029170","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029170","url":null,"abstract":"The application of infrared-to-visible upconversion in rare earth (Ho/sup 3+//Yb/sup 3+/) co-doped TeO/sub x/ sol-gel thin film for optical storage has been investigated. Optical discs with the storage layer made from rare-earth co-doped TeO/sub x/ sol-gel thin films have been studied in terms of minimum bit-size and up-conversion efficiency. The possibility of a multi-layered architecture has also been investigated. The choice of using TeO/sub x/ thin films is based on the higher up-conversion efficiency in the rare earth doped chalcogenide glasses. The nonlinear properties of the up-conversion effect lead to the possibility of reducing the 'effective' spot size of the signal region, smaller than that limited by diffraction, hence leading to super-resolution in the storage layer and increased storage density.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129669436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characteristics of novel hafnium oxide film 新型氧化铪薄膜的电学特性
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029155
K. L. Ng, N. Zhan, M. Poon, C. Kok, M. Chan, H. Wong
{"title":"Electrical characteristics of novel hafnium oxide film","authors":"K. L. Ng, N. Zhan, M. Poon, C. Kok, M. Chan, H. Wong","doi":"10.1109/HKEDM.2002.1029155","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029155","url":null,"abstract":"Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129172293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design of multi-finger HBTs with a thermal-electrical model 基于热电模型的多指hbt设计
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029165
Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, C. Liu
{"title":"Design of multi-finger HBTs with a thermal-electrical model","authors":"Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, C. Liu","doi":"10.1109/HKEDM.2002.1029165","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029165","url":null,"abstract":"Temperature distribution on the emitter fingers of heterojunction bipolar transistors (HBTs) is studied with a three-dimensional thermal-electrical model. Using this model, multi-finger HBTs is designed with non-uniform spacing. An efficient design procedure is presented. The calculated results show significant temperature reduction on non-uniform spacing devices.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116287393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
High-current injection in Spreading-Resistance Temperature sensor on SOI SOI上扩展电阻温度传感器的大电流注入
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029159
Z. H. Wu, Pui-To Lai, Bin Li, Johnny K. O. Sin
{"title":"High-current injection in Spreading-Resistance Temperature sensor on SOI","authors":"Z. H. Wu, Pui-To Lai, Bin Li, Johnny K. O. Sin","doi":"10.1109/HKEDM.2002.1029159","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029159","url":null,"abstract":"A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating current of SRT sensor on SOI.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133326390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer 利用金银换能层提高表面等离子体共振光学传感器的灵敏度
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029158
S.Y. Wu, H. Ho
{"title":"Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer","authors":"S.Y. Wu, H. Ho","doi":"10.1109/HKEDM.2002.1029158","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029158","url":null,"abstract":"It is well established that the surface plasmon resonance (SPR) optical sensor based on a metal-dielectric configuration can provide high sensitivity for many applications such as chemical and biological sensing. In fact the gold-dielectric configuration is most commonly used in the SPR sensor because of the fact that the thin gold layer can provide stable performance and good chemical resistance. In this paper, the characteristics of spectral SPR sensors that use composite silver/gold films for the transducing layer have been studied by using Fresnel formulas. Our simulations indicate that the optimal layer configuration for spectral SPR sensors should be gold(2 nm)-silver(48 nm)-dielectric for achieving best sensitivity.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126964862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
RF/microwave transistors: evolution, current status, and future trend 射频/微波晶体管:演变、现状和未来趋势
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029145
J. Liou, F. Schwierz
{"title":"RF/microwave transistors: evolution, current status, and future trend","authors":"J. Liou, F. Schwierz","doi":"10.1109/HKEDM.2002.1029145","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029145","url":null,"abstract":"Most applications for radio frequency/microwave (hereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modem RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook for expected future developments and applications of RF transistors is given.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133957150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation 采用no -等离子体氮化技术提高低温多晶硅薄膜晶体管栅介质的可靠性
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029151
David C. T. Or, P. Lai, J. Sin, J. Xu
{"title":"Enhanced reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation","authors":"David C. T. Or, P. Lai, J. Sin, J. Xu","doi":"10.1109/HKEDM.2002.1029151","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029151","url":null,"abstract":"Polysilicon thin-film transistors (poly-Si TFTs) fabricated solely by low-temperature processes (under 600/spl deg/C) are treated with nitridation using NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that the plasma is effective in improving the gate-oxide hardness against stress-induced damage, with the nitrided device showing a smaller shift in threshold voltage, a smaller decrease in peak transconductance and a smaller increase in subthreshold slope after the stress. This result shows that plasma nitridation has positive effects on the reliability of low-temperature-fabricated poly-Si TFTs, which play an important role nowadays in low-cost flat-panel display systems on glass.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123118434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology 金属诱导横向结晶技术制备先进多晶硅薄膜的非晶硅沉积温度优化
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029149
W. M. Cheung, C. Cheng, M. Poon, C. Kok, M. Chan
{"title":"Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology","authors":"W. M. Cheung, C. Cheng, M. Poon, C. Kok, M. Chan","doi":"10.1109/HKEDM.2002.1029149","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029149","url":null,"abstract":"Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphous Si (a-Si) is one of the approaches to form a better MILC polysilicon thin-film. In this paper, effects of the a-Si deposition temperature on MILC growth and grain quality were studied. It was found that the grain quality was improved when the a-Si deposition temperature was lowered from 550/spl deg/C to 500/spl deg/C. The MILC growth rate, however, was reduced when an a-Si layer with a lower deposition temperature was used.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127784555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Planar optical waveguide amplifiers 平面光波导放大器
Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI: 10.1109/HKEDM.2002.1029146
E. Pun
{"title":"Planar optical waveguide amplifiers","authors":"E. Pun","doi":"10.1109/HKEDM.2002.1029146","DOIUrl":"https://doi.org/10.1109/HKEDM.2002.1029146","url":null,"abstract":"Progress in erbium doped waveguide devices has been significant over the past few years, and commercial products are now available. In this paper, planar rare earth doped waveguide amplifiers, including Er/sup 3+/ doped and Er/sup 3+//Yb/sup 3+/ codoped waveguide devices, for telecommunication applications are reviewed.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114280785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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