SOI上扩展电阻温度传感器的大电流注入

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI:10.1109/HKEDM.2002.1029159

Z. H. Wu, Pui-To Lai, Bin Li, Johnny K. O. Sin

{"title":"SOI上扩展电阻温度传感器的大电流注入","authors":"Z. H. Wu, Pui-To Lai, Bin Li, Johnny K. O. Sin","doi":"10.1109/HKEDM.2002.1029159","DOIUrl":null,"url":null,"abstract":"A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating current of SRT sensor on SOI.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-current injection in Spreading-Resistance Temperature sensor on SOI\",\"authors\":\"Z. H. Wu, Pui-To Lai, Bin Li, Johnny K. O. Sin\",\"doi\":\"10.1109/HKEDM.2002.1029159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating current of SRT sensor on SOI.\",\"PeriodicalId\":154545,\"journal\":{\"name\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2002.1029159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2002.1029159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在SOI上的扩展电阻温度传感器(SRT)中发现了大电流注入现象。对不同硅膜厚度和掺杂浓度的传感器进行了仿真和实验，证明了这一现象可以用light中通常使用的电导率调制模型来解释。本文的研究对SOI上SRT传感器工作电流的设计具有重要的指导意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-current injection in Spreading-Resistance Temperature sensor on SOI

A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating current of SRT sensor on SOI.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

自引率

0.00%

发文量