新型氧化铪薄膜的电学特性

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) Pub Date : 2002-11-07 DOI:10.1109/HKEDM.2002.1029155

K. L. Ng, N. Zhan, M. Poon, C. Kok, M. Chan, H. Wong

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引用次数: 3

摘要

研究了在氧环境下直接溅射铪靶生长氧化铪薄膜的方法。XPS结果表明，氧化铪与硅衬底之间的界面较差。通过电容电压(C-V)和电流电压(I-V)测量，详细研究了氧化铪及其界面层的电学特性。观察到界面层包含影响器件运行的电荷陷阱。

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Electrical characteristics of novel hafnium oxide film

Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.

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来源期刊

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

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