{"title":"金属诱导横向结晶技术制备先进多晶硅薄膜的非晶硅沉积温度优化","authors":"W. M. Cheung, C. Cheng, M. Poon, C. Kok, M. Chan","doi":"10.1109/HKEDM.2002.1029149","DOIUrl":null,"url":null,"abstract":"Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphous Si (a-Si) is one of the approaches to form a better MILC polysilicon thin-film. In this paper, effects of the a-Si deposition temperature on MILC growth and grain quality were studied. It was found that the grain quality was improved when the a-Si deposition temperature was lowered from 550/spl deg/C to 500/spl deg/C. The MILC growth rate, however, was reduced when an a-Si layer with a lower deposition temperature was used.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology\",\"authors\":\"W. M. Cheung, C. Cheng, M. Poon, C. Kok, M. Chan\",\"doi\":\"10.1109/HKEDM.2002.1029149\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphous Si (a-Si) is one of the approaches to form a better MILC polysilicon thin-film. In this paper, effects of the a-Si deposition temperature on MILC growth and grain quality were studied. It was found that the grain quality was improved when the a-Si deposition temperature was lowered from 550/spl deg/C to 500/spl deg/C. The MILC growth rate, however, was reduced when an a-Si layer with a lower deposition temperature was used.\",\"PeriodicalId\":154545,\"journal\":{\"name\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2002.1029149\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2002.1029149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Amorphous silicon deposition temperature optimization on advanced polysilicon thin-film formation using metal-induced lateral crystallization technology
Metal-induced lateral crystallization (MILC) has been recognized as a promising crystallization method for low-temperature thin-film transistor (TFT) applications, such as active matrix liquid crystal display (AMLCD) technology. Advanced low-temperature TFT performances, which can be obtained by improving the quality of MILC polysilicon layer, are highly important. Changing the quality of amorphous Si (a-Si) is one of the approaches to form a better MILC polysilicon thin-film. In this paper, effects of the a-Si deposition temperature on MILC growth and grain quality were studied. It was found that the grain quality was improved when the a-Si deposition temperature was lowered from 550/spl deg/C to 500/spl deg/C. The MILC growth rate, however, was reduced when an a-Si layer with a lower deposition temperature was used.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
