E. Okulich, V. Okulich, D. Tetelbaum, A. Mikhaylov
{"title":"MOLECULAR DYNAMICS SIMULATION OF THE INITIAL STAGE OF ANNEALING OF SILICON DIOXIDE IRRADIATED WITH Si+ IONS","authors":"E. Okulich, V. Okulich, D. Tetelbaum, A. Mikhaylov","doi":"10.29003/m3094.mmmsec-2022/140-143","DOIUrl":"https://doi.org/10.29003/m3094.mmmsec-2022/140-143","url":null,"abstract":"In this work, molecular dynamics modeling of the processes of self-annealing of filament structures in memristors based on a-SiO2 films irradiated with Si+ ions has been performed.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123970719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"COMPUTER SIMULATION OF RESISTIVE SWITCHING IN HFO2 MEMRISTORS","authors":"E. Ganykina, A. Rezvanov, S. Zyuzin, E. Gornev","doi":"10.29003/m3096.mmmsec-2022/148-150","DOIUrl":"https://doi.org/10.29003/m3096.mmmsec-2022/148-150","url":null,"abstract":"The paper presents computer simulation of the formation and rupture of a conductive filament in a hafnium oxide-based memristor using two different approaches: the finite element method and the kinetic Monte Carlo method.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121749655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Nastovjak, D. Shterental, I. Neizvestny, N. Shwartz
{"title":"SIMULATION OF HIGH-TEMPERATURE ANNEALING OF GaAs NANOWIRE ARRAY","authors":"A. Nastovjak, D. Shterental, I. Neizvestny, N. Shwartz","doi":"10.29003/m3071.mmmsec-2022/71-74","DOIUrl":"https://doi.org/10.29003/m3071.mmmsec-2022/71-74","url":null,"abstract":"The paper deals with Monte Carlo simulation of GaAs nanowire array annealing. Non uniform nanowire shrinking experimentally observed in dense array of long nanowires was explained.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122421969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"ANALYSIS OF THE ELEMENT BASE AND CIRCUIT DESIGN FOR NEUROMORPHIC COMPUTING ON MEMRISTOR CROSSBARS","authors":"O. Telminov, E. Gornev","doi":"10.29003/m3098.mmmsec-2022/156-159","DOIUrl":"https://doi.org/10.29003/m3098.mmmsec-2022/156-159","url":null,"abstract":"The variants of circuit solutions for analog matrix-vector calculations on crossbars with memristors – bipolar with programmable value of resistance installed in their nodes are considered","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114837189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Kiselyova, V. Dudarev, O. Senko, A. Dokukin, Yu Kuznetsova
{"title":"APPLICATION OF MACHINE LEARNING METHODS FOR THE DESIGN OF NEW INORGANIC COMPOUNDS PROMISING FOR ELECTRONICS","authors":"N. Kiselyova, V. Dudarev, O. Senko, A. Dokukin, Yu Kuznetsova","doi":"10.29003/m3062.mmmsec-2022/36-39","DOIUrl":"https://doi.org/10.29003/m3062.mmmsec-2022/36-39","url":null,"abstract":"The possibilities and results of using machine learning methods for predicting the properties of new compounds for electronics are considered.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129276962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"SIMULATION MODELING OF AN ANALOGUE SPIKING NEURAL NETWORK BASED ON MEMRISTIC ELEMENTS USING PARALLEL TECHNOLOGIES","authors":"A. Morozov, K. Abgaryan, D. Reviznikov","doi":"10.29003/m3097.mmmsec-2022/150-156","DOIUrl":"https://doi.org/10.29003/m3097.mmmsec-2022/150-156","url":null,"abstract":"The paper deals with the issues of simulation modeling of an analog spiking neural network based on memristive elements within the framework of the problem of recognizing a set of five images of 128 by 128 pixels in size, which involves solving more than 80 thousand differential equations.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126231450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"ABOUT THE DEVELOPMENT OF PRODUCTION TECHNOLOGY FOR ELECTRONIC DEVICE COMPONENTS","authors":"A. Molotkov, O. Tretiyakova, D. Tuzhilin","doi":"10.29003/m3064.mmmsec-2022/44-47","DOIUrl":"https://doi.org/10.29003/m3064.mmmsec-2022/44-47","url":null,"abstract":". The paper presents a development of the modern industrial technologies for the production of components of electronic devices. A software package has been created for modeling the process of selective laser melting and visualization of processing processes, applicable to other technologies, such as direct laser melting, laser cutting, laser welding, laser micro-micromachining of various materials. The developed software package allows solving the problems of arranging of effective and automated production cycle for researching and manufacturing of components of electronic devices and parts of complex geometry","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132766372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"MATHEMATICAL MODELING OF THE CRYSTAL STRUCTURE OF HEXAGONAL CLOSE-PACKED METALLS","authors":"P. Sechenykh","doi":"10.29003/m3083.mmmsec-2022/105-108","DOIUrl":"https://doi.org/10.29003/m3083.mmmsec-2022/105-108","url":null,"abstract":"The paper presents the calculation of the metric parameters of crystalline compounds according to a given chemical formula and a space symmetry group. The hexagonal close-packed structure is considered","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132015830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"QUANTUM-CHEMICAL CALCULATION OF THE ENERGY CHARACTERISTICS OF BORON-DOPED ?-GA2O3","authors":"E. Okulich, V. Okulich, D. Tetelbaum","doi":"10.29003/m3093.mmmsec-2022/138-140","DOIUrl":"https://doi.org/10.29003/m3093.mmmsec-2022/138-140","url":null,"abstract":"The paper presents the results of calculations by the DFT method of the energy characteristics of possible configurations of the boron atom embedded in Ga2O3 using ion implantation. The results for different types of interstitials are obtained, and the energy barriers of diffusion B along interstitial channels are estimated.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134242932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"METHODS OF CREATING AN INTEGRATION PLATFORM FOR SOLVING MATERIAL SCIENCE PROBLEMS","authors":"K. Abgaryan, E. Gavrilov","doi":"10.29003/m3059.mmmsec-2022/18-23","DOIUrl":"https://doi.org/10.29003/m3059.mmmsec-2022/18-23","url":null,"abstract":"The report considers the problems of building information systems for solving the problems of materials science. The methods for creating an integration platform for multiscale modeling are presented. The relevance of the developed approaches for studying the properties of materials and the construction of structure-property interdependencies was noted. As a tool for automating the process of distributed computing, the approaches used in the automation of business processes were used. The developed solutions are implemented with the use of parallel computing on the high-performance resources of the Informatics Center of the RAS Research Institute","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132262521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}