{"title":"hfo2忆阻器阻性开关的计算机模拟","authors":"E. Ganykina, A. Rezvanov, S. Zyuzin, E. Gornev","doi":"10.29003/m3096.mmmsec-2022/148-150","DOIUrl":null,"url":null,"abstract":"The paper presents computer simulation of the formation and rupture of a conductive filament in a hafnium oxide-based memristor using two different approaches: the finite element method and the kinetic Monte Carlo method.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"COMPUTER SIMULATION OF RESISTIVE SWITCHING IN HFO2 MEMRISTORS\",\"authors\":\"E. Ganykina, A. Rezvanov, S. Zyuzin, E. Gornev\",\"doi\":\"10.29003/m3096.mmmsec-2022/148-150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents computer simulation of the formation and rupture of a conductive filament in a hafnium oxide-based memristor using two different approaches: the finite element method and the kinetic Monte Carlo method.\",\"PeriodicalId\":151453,\"journal\":{\"name\":\"Mathematical modeling in materials science of electronic component\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical modeling in materials science of electronic component\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29003/m3096.mmmsec-2022/148-150\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m3096.mmmsec-2022/148-150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
COMPUTER SIMULATION OF RESISTIVE SWITCHING IN HFO2 MEMRISTORS
The paper presents computer simulation of the formation and rupture of a conductive filament in a hafnium oxide-based memristor using two different approaches: the finite element method and the kinetic Monte Carlo method.
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