COMPUTER SIMULATION OF RESISTIVE SWITCHING IN HFO2 MEMRISTORS

Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI:10.29003/m3096.mmmsec-2022/148-150

E. Ganykina, A. Rezvanov, S. Zyuzin, E. Gornev

引用次数: 0

Abstract

The paper presents computer simulation of the formation and rupture of a conductive filament in a hafnium oxide-based memristor using two different approaches: the finite element method and the kinetic Monte Carlo method.

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hfo2忆阻器阻性开关的计算机模拟

本文采用有限元法和动力学蒙特卡罗法对氧化铪基忆阻器中导电丝的形成和断裂过程进行了计算机模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mathematical modeling in materials science of electronic component

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